DLA SMD-5962-96677 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD 2 LINE TO 1 LINE DATA SELECTOR MULTIPLEXER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 四重2行到1行数据选择器或多路器 硅单片电路数字.pdf

《DLA SMD-5962-96677 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD 2 LINE TO 1 LINE DATA SELECTOR MULTIPLEXER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 四重2行到1行数据选择器或多路器 硅单片电路数字.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96677 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD 2 LINE TO 1 LINE DATA SELECTOR MULTIPLEXER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 四重2行到1行数据选择器或多路器 硅单片电路数字.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、LTR A B I Update boilerplate and appendix A. Editorial changes throughout. - tmh I 00-05-31 I Monica L. Poelking DESCRIPTION DATE (YR-MO-DA) APPROVED 98-01 -29 Monica L. Poelking Changes in accordance with NOR 5962-R033-98. REV STATUS OF SHEETS R EV SHEET BBBBBBBBBBBBBB 12 3 4 5 6 7 8 9 1011 1213 14

2、 PMIC NIA SIZE A STANDARD MICROCIRCUIT DRAW1 NG CAGE CODE 67268 5962-96677 PREPAREDBY Larry T. Gauder CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA APPROVED BY

3、Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD 2 LINE TO 1 LINE DATA SELECTOR/MULTIPLEXER, MONOLITHIC SILICON DRAWING APPROVAL DATE I 96-01 -04 I REVISION LEVEL B SHEET 1 OF 23 DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlim

4、ited. 5962-E212-00 Licensed by Information Handling Services1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice

5、 of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. SIZE A REVISION LEVEL SHEET 3 1.2 m. The PIN is as shown in the following example: 96677 Federa

6、l RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marke

7、d with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpefs). The device type(s) identify the circuit function as follow

8、s: Device tvpe Generic number Circuit function o1 02 40257B 40257BN Radiation hardened CMOS quad 2 line to 1 line data selector/multiplexer Radiation hardened CMOS quad 2 line to 1 line data selector/multiplexer with neutron irradiated die 1.2.3 Device class desimator. The device class designator is

9、 a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qual

10、ification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle E CDI P2-Tl6 16 Dual-i n-line package X CDFP4-FI6 16 Flat package 1.2.5 Lead finish. The lead finish is as specified i

11、n MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. I 5962-96677 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling Services1.3 Absolute maximum ratinas. I/ 21 31 Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltag

12、e range -0.5 V dc to VDD + 0.5 Vdc DC input current, any one inpu 110 mA 1 O0 mW Device dissipation per output t Storage temperature range (TSTG -65C to +150C Lead temperature (soldering, 1 O seconds) . +265“C Thermal resistance, junction-to-case (Jc): Thermal resistance, junction-to-ambient JA): Ca

13、se E . 73“CNV Case X . 1 14“CNV Junction temperature (TJ) +175“C 0.68 W Case X . 0.44 W DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.4 Recommended operatina conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Case operating temperature range (TC) . -55C to +125“C Input volta

14、ge (VIN) . O V to VDD Output voltage (VOUT) O V to VDD Radiation features: Total dose . 1 x 1 O5 Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) . 75 MEy/(cmZ/mg) s/ Dose rate upset (20 ns pulse) 5 x 10 Rads(Si)/s 5/ Dose rate latch-up .

15、2 x 10 Rads(Si)/s 5/ Dose rate survivability . 5 x 1 O Rads(Si)/s 5/ Neutron irradiated E/ . 1 x 1 O neutronskm 11 14 7 2. APPLICABLE DOCUMENTS SIZE A REVISION LEVEL SHEET ? 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of t

16、his drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPEC I FI CATI ON DEPARTMENT OF DEFENSE M

17、IL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. - - 1/ Stresses above the absolute

18、 maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. - 2/ Unless otherwise specified, all voltages are referenced to VSS. - 3/ The limits for the parameters specified herein shall apply over the full specif

19、ied VCC range and case temperature range of -55C to +125“C unless otherwise noted. - 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: - 5/ Guaranteed by design or process but not tested. - 6/ Devic

20、e type 02 only. Case E . 13.7 mW/“C Case X . 8.8 mW/“C I 5962-96677 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesHANDBOOKS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 DEPARTMENT OF DEFENSE SIZE A REVISION LEVEL SHEET 4 MIL-HDBK-103 - MIL-

21、HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11 -5094.) 2.

22、2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS

23、3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as

24、 described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document. 3.2 Desian, const

25、ruction, and phvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein

26、. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Block diaqrams. The block diagrams shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation test connectio

27、ns shall be as specified in tab1 III herein herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical petformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the

28、 full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In additio

29、n, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator sha

30、ll still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requir

31、ed in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of

32、 this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source

33、of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requ

34、ired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. I 5962-96677 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling Services3.8 Notification o

35、f chancie for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 3.9 Verification and review for d

36、evice class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.1 O Microcircuit ciroup assicinment f

37、or device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). SIZE A REVISION LEVEL SHEET 5 4. QUALITY ASSURANCE PROVISIONS 4.1 Samplinci and inspection. For device classes Q and V, sampling and inspection procedures shall

38、 be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38

39、535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, a

40、nd shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test. method 1015 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and

41、 shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1 O1 5. (2) TA = +125“C, minimum. Interim and final electrical test p

42、arameters shall be as specified in table IIA herein. b. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The bu

43、rn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs,

44、 biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. c. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q s

45、hall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B,

46、 C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits altern

47、ate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be petformed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E

48、inspections (see 4.4.1 through 4.4.4). I 5962-96677 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTest Symbol Supply current Conditions unless otherwise specified -55C 5 Tc 5 +125“C Low level output current (sink) IDD High level output current (source)

49、VDD = 5 V VIN = 0.0 V or VDD See notes at end of table IOL TABLE I. Electrical performance characteristics. VDD = 5 V Vo = 0.4 V VIN = 0.0 V or VDD IOH VDD = 5 V Vo = 4.6 V VIN = 0.0 V or VDD VDD = 10 V VIN = 0.0 V or VDD DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 VDD = 15 V VIN = 0.0 V or VDD REVISION LEVEL SHEET fi VDD = 20 V, VIN = 0.0 V or VDD M, D, L, R 21 I VDD = 18 V, VIN = 0.0 V or VDD VDD = 10 V Vo = 0.5 V VIN = 0.0 V or VDD VDD = 15 V vo = 1.5 v VIN = 0.0 V or VDD VDD = 5 V Vo = 2.5 V VIN = 0.0 V or VDD VDD = 10 V vo = 9.5 v VIN = 0.0 V or VDD VDD =