DLA SMD-5962-96676 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 同步可编程4-BIT计数器 硅单片电路数字微电路》.pdf

《DLA SMD-5962-96676 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 同步可编程4-BIT计数器 硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96676 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 同步可编程4-BIT计数器 硅单片电路数字微电路》.pdf（31页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R190-97. 97-02-24 Monica L. PoelkingB Changes in accordance with NOR 5962-R417-97.97-08-14 Monica L. PoelkingC Update boilerplate and appendix A. Editorial changes throughout. - tmh 00-05-31Monica L. PoelkingREVSH

2、EETREV CCCCCCCCCCCCCCCSHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Gary L. GrossDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR US

3、E BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE96-01-10MICROCIRCUIT, DIGITAL, RADIATIONHARDENED CMOS, SYNCHRONOUSPROGRAMMABLE 4-BIT COUNTERS,MONOLITHIC SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-96676SHEET1 OF 29DSCC FORM 2233A

4、PR 97 5962-E224-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96676DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVIS

5、ION LEVELCSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Id

6、entifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 R 96676 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock cla

7、ss designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Dev

8、ice class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit functio

9、n01 40160B Radiation hardened CMOS synchronous programmable 4-bit counter withasynchronous clear02 40161B Radiation hardened CMOS synchronous programmable 4-bit counter withasynchronous clear03 40162B Radiation hardened CMOS synchronous programmable 4-bit counter withsynchronous clear04 40163B Radia

10、tion hardened CMOS synchronous programmable 4-bit counter withsynchronous clear05 40161BN Radiation hardened CMOS synchronous programmable 4-bit counter withasynchronous clear with neutronirradiated die1.2.3 Device class designator. The device class designator is a single letter identifying the prod

11、uct assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-38535Provided by IHSN

12、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96676DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 an

13、d as follows:Outline letter Descriptive designator Terminals Package styleE CDIP2-T16 16 Dual-in-line packageX CDFP4-F16 16 Flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.1.3 Absolute maximum r

14、atings. 1/ 2/ 3/Supply voltage range (VDD). -0.5 V dc to +20 V dcInput voltage range -0.5 V dc to VDD + 0.5 VdcDC input current, any one input 10 mADevice dissipation per output transistor 100 mWStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds). +265CThermal resi

15、stance, junction-to-case (JC):Case E. 24C/WCase X. 29C/WThermal resistance, junction-to-ambient (JA):Case E. 73C/WCase X. 114C/WJunction temperature (TJ). +175CMaximum power dissipation at TA = +125C (PD): 4/Case E. 0.68 WCase X. 0.44 W1.4 Recommended operating conditions.Supply voltage range (VDD).

16、 3.0 V dc to +18 V dcCase operating temperature range (TC) . -55C to +125CInput voltage (VIN). 0 V to VDDOutput voltage (VOUT) . 0 V to VDDRadiation features:Total dose . 1 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold, no upsets or latchup (see 4.4.4.4). 75 MEV/(cm2/m

17、g) 5/Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/Dose rate latch-up . 2 x 108Rads(Si)/s 5/Dose rate survivability . 5 x 1011Rads(Si)/s 5/Neutron irradiated (device types 05) 1 x 1014neutrons/cm21/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended op

18、eration at themaximum levels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of-55C to +125C unless otherwise no

19、ted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate:Case E . 13.7 mW/CCase X . 8.8 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking p

20、ermitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96676DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and

21、handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPART

22、MENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF D

23、EFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia

24、, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.

25、3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, o

26、r function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document.3.2 Desi

27、gn, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4

28、 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth tables. The truth tables shall be as specified on figure 2.3.2.4 Functional diagram. The functional diagram shall be as specified on figure 3.3.2.5 Radiation exposure circuit. The radiation tes

29、t connections shall be as specified in table III.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the ful

30、lcase operating temperature range.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96676DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 973.4 Electrical test requireme

31、nts. The electrical test requirements shall be the subgroups specified in table IIA. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. F

32、or packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accorda

33、nce with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ a

34、s required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcomplian

35、ce shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for

36、 device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38

37、535, appendix A shall be provided with each lot of microcircuits deliveredto this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined i

38、n MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the revi

39、ewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 40 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedure

40、s shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PR

41、F-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883,

42、and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and sh

43、all be made available to the preparing or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test paramete

44、rs shall be as specified in table IIA herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96676DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE I. Electrica

45、l performance characteristics.LimitsTest SymbolConditions-55C 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2VOLVDD/2V9 400VDD= 5 V, VIN= VDDor GND10, 11 540M, D, L, R 2/ 9 540VDD= 10 V, VIN= VDDor GND 9 1/ 160Propagation delay time,clock to QtPHL1,tPLH14/VDD= 15 V, VIN= VDDor GN

46、DAll9 1/ 120ns9 450VDD= 5 V, VIN= VDDor GND10, 11 608M, D, L, R 2/ 9 608VDD= 10 V, VIN= VDDor GND 9 1/ 190Propagation delay time,clock to C outtPHL2,tPLH24/VDD= 15 V, VIN= VDDor GNDAll9 1/ 140ns9 250VDD= 5 V, VIN= VDDor GND10, 11 338M, D, L, R 2/ 9 338VDD= 10 V, VIN= VDDor GND 9 1/ 110Propagation de

47、lay time,TE to C outtPHL3,tPLH34/VDD= 15 V, VIN= VDDor GNDAll9 1/ 80ns9 500VDD= 5 V, VIN= VDDor GND10, 11 675M, D, L, R 2/ 9 675VDD= 10 V, VIN= VDDor GND 9 1/ 220Propagation delay time,C_L_E_A_R_ to QtPHL44/VDD= 15 V, VIN= VDDor GND01,02,059 1/ 160ns9 200VDD= 5 V, VIN= VDDor GND10, 11 270VDD= 10 V,

48、VIN= VDDor GND 9 1/ 100Transition time tTHL,tTLH4/VDD= 15 V, VIN= VDDor GNDAll9 1/ 80nsSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96676DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET9DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.LimitsTest SymbolConditions-55C TC +125Cunless otherwise specifiedDevicetypeGroup AsubgroupsMin MaxUnit92VDD= 5 V, VIN= VDDor GND10, 11 1.48VDD= 10 V, VIN= VDDor GND 9 1/ 5.5Maximu