DLA SMD-5962-96673 REV D-2009 MICROCIRCUIT DIGITAL CMOS RADIATION HARDENED DUAL BINARY TO 1 OF 4 DECODER DEMULTIPLEXER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R189-97. - cfs 97-02-24 Monica L. Poelking B Changes in accordance with NOR 5962-R416-97. - ltg 97-08-14 Monica L. Poelking C Update boilerplate and appendix A. Editorial changes throughout. - tmh 00-05-25 Moni

2、ca L. Poelking D Update the boilerplate paragraphs to current requirements as specified in MIL-PRF-38535. Update section 1.5, Radiation features. Change title to correctly reflect the device function. jak 09-06-15 Thomas M. Hess REV SHET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D D

3、 D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPR

4、OVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDENED, DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-04 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96673 SHEET 1 OF 20 DSCC FORM 223

5、3 APR 97 5962-E278-09 .Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96673 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dr

6、awing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiatio

7、n Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96673 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.

8、2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appr

9、opriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4555B Radiation hardened CMOS dual binary to 1 of 4 decoder/demultiplexers, outputs high on select 02 4556B

10、 Radiation hardened CMOS dual binary to 1 of 4 decoder/demultiplexers, outputs low on select 03 4555BN Radiation hardened CMOS dual binary to 1 of 4 decoder/demultiplexers, outputs high on select, with neutron irradiated die 04 4556BN Radiation hardened CMOS dual binary to 1 of 4 decoder/demultiplex

11、ers, outputs low on select, with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 com

12、pliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style

13、E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

14、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96673 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD+ 0.5 V dc DC in

15、put current, any one input 10 mA Device dissipation per output transistor 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) . +265C Thermal resistance, junction-to-case (JC): Case E . 24C/W Case X . 29C/W Thermal resistance, junction-to-ambient (JA): Case

16、 E . 73C/W Case X . 114C/W Junction temperature (TJ) . +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E . 0.68 W Case X . 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage (VIN)

17、 . 0 V to VDDOutput voltage (VOUT) . 0 V to VDD1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5

18、 x 108 Rads(Si)/s 5/ Dose rate latch-up . 2 x 108Rads(Si)/s 5/ Dose rate survivability . 5 x 1011Rads(Si)/s 5/ Neutron irradiated (device types 03 and 04) 1 x 1014neutrons/cm2 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum le

19、vels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device powe

20、r exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case E . 13.7 mW/C Case X . 8.8 mW/C 5/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase o

21、rder or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96673 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Gove

22、rnment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICA

23、TION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard M

24、icrocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publicatio

25、ns. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of S

26、ingle Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.2 Order of precedence. In the event of

27、a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual i

28、tem requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item

29、requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document. 3.2 Design, construction, and physical dimensions. The d

30、esign, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The termi

31、nal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96673 DEFENSE SUPPLY CENTER COLUMBUS

32、COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.

33、3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical

34、 test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packa

35、ges where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance wi

36、th MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re

37、quired in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of complianc

38、e shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, fo

39、r device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PR

40、F-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that

41、affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option o

42、f the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

43、ICROCIRCUIT DRAWING SIZE A 5962-96673 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V V

44、DD= 20 V, VIN= VDDor GND 7 VDD= 18 V, VIN= VDDor GND All 8A M, D, P, L, R 2/ 7 VDD= 3.0 V, VIN= VDDor GND All 8B M, D, P, L, R 2/ 7 Input capacitance CINAny input, See 4.4.1c 1/ All 4 7.5 pF Propagation delay time, A or B input to any output tPHL1, tPLH1VDD= 5 V, VIN= VDDor GND 4/ All 9 440 ns 10, 1

45、1 594 M, D, P, L, R 2/ 9 594 VDD= 10 V 1/, 4/ 9 190 VDD= 15 V 1/, 4/ 9 140 Propagation delay time, _E to any output tPHL2, tPLH2VDD= 5 V, VIN= VDDor GND 4/ All 9 400 ns 10, 11 540 M, D, P, L, R 2/ 9 540 VDD= 10 V 1/, 4/ 9 170 VDD= 15 V 1/, 4130 Transition time tTHL,tTLHVDD= 5 V, VIN= VDDor GND 4/ Al

46、l 9 200 ns 10, 11 270 VDD= 10 V 1/, 4/ 9 100 VDD= 15 V 1/, 480 1/ These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. 2/ Devices supplied to this drawing

47、 will meet all levels M, D, P, L, and R of irradiation. However, this device is only tested at the R level. When performing post irradiation electrical measurements for any RHA level, TA= +25C. Pre and post irradiation values are identical unless otherwise specified in table IA. 3/ For accuracy, vol

48、tage is measured differentially to VDD. Limit is 0.050 V Max. 4/ CL= 50 pF, RL= 200 k, Input tR, tF 20 ns. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96673 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 9 DSCC FORM 2234 APR 97 Device type 01, 03 02, 04 Case outlines E and X Terminal number Terminal symbol 1 2 3 4 5 6 7