DLA SMD-5962-96672 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS PROGRAMMABLE TIMER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体可编程定时器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96672 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS PROGRAMMABLE TIMER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体可编程定时器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96672 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS PROGRAMMABLE TIMER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体可编程定时器硅单片电路数字微电路》.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、LTR A B I Update boilerplate and appendix A. Editorial changes throughout. - tmh I 00-05-25 I Monica L. Poelking DESCRIPTION DATE (YR-MO-DA) APPROVED 98-06-1 O Monica L. Poelking Changes in accordance with NOR 5962-R105-98. REV STATUS OF SHEETS R EV SHEET BBBBBBBBBBBBBB 12 3 4 5 6 7 8 9 1011 1213 14

2、 PMIC NIA SIZE A STANDARD MICROCIRCUIT DRAW1 NG CAGE CODE 67268 5962-96672 THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA PREPAREDBY Dan Wonnell CHECKED BY I Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 APPROVED BY Mo

3、nica L. Poelking DRAWING APPROVAL DATE MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, PROGRAMMABLE TIMER, MONOLITHIC SILICON 95-1 2-20 REVISION LEVEL B SHEET 1 OF 20 DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E295-00 Provided by IHSN

4、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (dev

5、ice class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN is as shown in the following example: SIZE A REVISION LEVE

6、L SHEET 3 5962 R 96672 o1 V T T X 1 II I I I I Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet

7、 the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpefs). The d

8、evice type(s) identify the circuit function as follows: Device tvpe o1 Generic number Circuit function 4536B Radiation hardened CMOS programmable timer 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Q or

9、V Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated

10、in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle E CDI P2-Tl6 X CDFP4-FI6 16 Dual-i n-line package 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class

11、 M. STANDARD MICROCIRCUIT DRAWING I 5962-96672 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratinas. I/ 21 31 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Supply voltage range (VDD) . -0.5 V

12、dc to +20 V dc Input voltage range -0.5 V dc to VDD + 0.5 Vdc DC input current, an 11 O mA Device dissipation per output transistor 1 O0 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 1 O seconds) Thermal resistance, junction-to-case (Jc): +265“C Case E . 24“CNV Case

13、X 29“CNV Case E . 73“CNV Case X . 1 14“CNV Junction temperature (TJ) . +175“C Maximum power dissipation at TA = +125“C (PD): Case E . 0.68 W Case X . 0.44 W Thermal resistance, junction-to-ambient JA): SIZE A REVISION LEVEL SHEET ? 1.4 Recommended operatina conditions. Supply voltage range (VDD) . 3

14、.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125“C Input voltage (VIN) O V to VDD Output voltage (VOUT) . O V to VDD Radiation features: Total dose . 1 x 1 O5 Rads (Si) Single event phenomenon (SEP) effective 75 MEy/(cmZ/mg) s/ 5 x 10 Rads(Si)/s 5/ 2 x 10 Rads(Si)/s 5/ Dose rat

15、e survivab 5 x 1 Rads(Si)/s 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed

16、in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPEC I FI CATI ON DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-8

17、83 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. - - 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performa

18、nce and affect reliability. - 2/ Unless otherwise specified, all voltages are referenced to VSS. - 3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of -55C to +125“C unless otherwise noted. - 4/ If device power exceeds package

19、 dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: - 5/ Guaranteed by design or process but not tested. Case E . 13.7 mW/“C Case X . 8.8 mW/“C I 5962-96672 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Provided by IHSNot for Re

20、saleNo reproduction or networking permitted without license from IHS-,-,-HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - MIL-HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). (Unless otherwise indicated, copies of the specification, standards, and handbooks are

21、 available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11 -5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this d

22、ocument, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the devic

23、e manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

24、herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document. 3.2 Desian, construction, and phvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-3853

25、5, appendix A and herein for device class M. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The trut

26、h tables shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, th electrical petformance characteristi

27、cs and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in

28、table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not

29、marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/complian

30、ce mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shal

31、l be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein)

32、. The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535,

33、 appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. SIZE A REVISION LEVEL SHEET 4 3.

34、8 Notification of chame for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. I 5962-96672 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Provided by

35、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offsho

36、re documentation shall be made available onshore at the option of the reviewer. 3.1 O Microcircuit aroup assianment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS DEFENSE SUP

37、PLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 4.1 Samplina and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affe

38、ct the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior

39、 to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. SIZE A REVISION LEVEL SHEET 5 a.

40、 Burn-in test. method 1015 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outpu

41、ts, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1 O1 5. (2) TA = +125“C, minimum. Interim and final electrical test parameters shall be as specified in table IIA herein. b. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in t

42、est duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Boa

43、rd (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b.

44、c. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification insp

45、ection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes

46、Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appe

47、ndix A and as specified herein. Inspections to be petformed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). I 5962-96672 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Provided by IHSNot for

48、 ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics. Output voltage, LOW Test VOL Symbol DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Supply current REVISION LEVEL SHEET fi Output voltage, HIGH Low level output curr

49、ent (sink) See notes at end of table. Conditions unless otherwise specified -55C 1. Tc 1. +125“C VDD = 20 V, VIN = VDD or GND M, D, L, R 21 VDD = 18 V, VIN = VDD or GND VDD = 1 O V, VIN = VDD or GND 11 VDD = 15 V, VIN = VDD or GND 11 VDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN = VDD or GND VDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN = VDD or GND VDD = 15 V, no load VDD = 5 V, no load 11 VDD = 1 O V, no load 11 VDD = 15 V, no load 31 VDD = 5 V, no load 11 VDD = 1 O V, no