DLA SMD-5962-94523 REV A-1996 MICROCIRCUIT DIGITAL CMOS 16 X 16 BIT PARALLEL MULTIPLIER MONOLITHIC SILICON《硅单片 16 X 16位并行多路复用器 氧化物半导体数字微型电路》.pdf
《DLA SMD-5962-94523 REV A-1996 MICROCIRCUIT DIGITAL CMOS 16 X 16 BIT PARALLEL MULTIPLIER MONOLITHIC SILICON《硅单片 16 X 16位并行多路复用器 氧化物半导体数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-94523 REV A-1996 MICROCIRCUIT DIGITAL CMOS 16 X 16 BIT PARALLEL MULTIPLIER MONOLITHIC SILICON《硅单片 16 X 16位并行多路复用器 氧化物半导体数字微型电路》.pdf(19页珍藏版)》请在麦多课文档分享上搜索。
1、SQD-5962-94523 REV A m 9999996 0089Li38 708 m DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER COLUMBUS 3990 EAST BROAD STREET COLUMBUS, OH 4321 6-5000 IN REPLY REFER TO: DSCC-VAC (Mr. Gauder/(DSN)8504545/614-6924545) OCT 2 3 l996 SUBJECT: Notice of Revision (NOR) 59624209-96 for Standard Microcircuit
2、 Drawing (SMD) 5962-94523. Military/Industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR s
3、hould be attached to the subject SMD for future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a certificate of compliance. This is evidenced by an existing active curre
4、nt certificate of compliance on file at DSCC with a DSCC record Df verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. If you have comments or questions, please contact Larry T. Gauder at (DSN)8504545
5、/(614)6924545. 1 Encl Monica L. Poeikhg Chief, Custom Microelectroncs Branch Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-94523 REV A m 999999b 0089437 b44 m I I 3. TITLE OF DOCUMENT MICROCIRCUIT, DIGITAL, CMOS, 16 X 16 BIT PARALLEL MULTI
6、PLIER, MONOLITHIC SILICON IO. REVISION LETTER a. CURRENT b. NEW Initial A NOTICE OF REVISION (NOR) 11. ECP NO. 1. DATE I (WMMDD) b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DSCC-VAC 96-09-25 I OMB Ni 0704-0188 THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIED FOR ME DOCUMENT LISTED. I c.
7、TYPED NAME (First, Middle Initial, Last) Monica L. Poelking 3990 East Broad Street Columbus, OH 43216-5000 I. TYPED NAME (First, Middle Initial, Last) b. REVISION COMPLETED (Signature) Larry T. Gauder 7. CAGE CODE 8. DOCUMENT NO. I 67268 I 5962-94523 c. DATE SIGNED (YYMMD 0) 96-09-25 Sheet 1: Revisi
8、ons ltr colum; add iiA1i. Revisions description coluni; add “Changes in accordance ui th NOR 5962-R2D9-96”. Revisions date colum; add 11%-09-251B. Revision Level block; add Rev status of sheets; for sheet 1 and 6, add IBAa4. TABLE I, Clutput voltage, high VOH, delete Il3.5 V Minll and substitute “2.
9、4 V Mint1. Revision level block; add IaA4l. Sheet 6: 14. THIS SECTION FOR GOVERNMENT USE ONLY (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master dowment shall make ab
10、ove revision and furnish revised document. d. TITLE Chief, Custom Microelectronics 15a. ACTIVITY ACCOMPLISHING REVISION DSCC-VAC DD Form 1695, APR 92 e. SIGNATURE Monica L. Poelking f. DATE SIGNED (YYMMDD) I 96-09-25 Provided by IHSNot for ResaleNo reproduction or networking permitted without licens
11、e from IHS-,-,-LTR DESCRIPTICN PREPARED BY Thomas M. Hess “ED WTE (YR-MO-DA) CHECKED BY Thomas M. Hess REV S?r Fw =ET APPROVED BY Monica L. Poelking 11 56 DRAUING APPROVAL DATE 94 - 04 - 27 REVISION LEVEL MICROCIRCUIT, DIGITAL, 16 X 16 BIT PARALLEL MULTIPLIER MONOLITHIC SILICON A IZ2z I 5962-94523 S
12、HEET 1 OF 16 5962-EO these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). Subgroup 4 (Cnr measurements) shall be measured only for the initial test and after design changes which may affect capacitance. For device classes c. A minimun sarrple si
13、ze of 5 devices with zero rejects shall be required. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table 11 herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condi
14、tion A, 6, C, or D. The test circuit shall be maintained by the manufacturer under docunent revision level control and shall be made available to the preparing or acquiring activity upon request. test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accorda
15、nce with the intent specified in test method 1005. The b. TA = +125C, minim. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. SIZE 5962-94523 A DAYTON, OHIO 45444 I 14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S
16、MD-5962-94523 9999996 O060888 945 M i nt er i m e 1 ec t r i ca 1 parameters (see 4.2) Final electrical parameters (see 4.2) TABLE II. Electrical test reauirements. I I I I 1,7,9 18789 18789 1/ 1/ 11 8 2, 38 78 88 1, 2, 3, 7, 9, 10, 11 9, 10, 11 8, 9, 10,ll 1, 2, 3, 7# 8 Test requirements Group A te
17、st requirements (see 4.4) Subgroups (in accordance with (in accordance uith MIL-STO-883, MIL-1-38535, table III) Devi ce Device Device class M class 9 class V 1, 2. 3, 4, 7, 1, 2, 3, 4, 7, 1, 2. 3. 4, 7 8, 9, 10, 11 8, 9, 10, 11 8, 9, 10, 11 Group C end-point electrical parameters (see 4.4) I I I I
18、I l I 1.7,9 18789 1.7,9 Group E end-point electricat parameters (see 4.4) I I I I I I I I 1,7,9 1,7,9 1#789 I I I I I I I Group D end-point electrical 1,7,9 I 1,7,9 I 1,7,9 I parameters (see 4.4) 4.4.2.2 Additional criteria for device classes P and V. The steady-state life test duration, test condit
19、ion and test temperature, or approved alternatives shall be as specified in the device manufacturers Pn plan in accordance uith MIL-1-38535. manufacturers TRB, in accordance with MIL-1-38535, and shall be made available to the acquiring or preparing activity upon request. accordance uith the intent
20、specified in test method 1005. The test circuit shall be maintained der docunent revision level control by the device The test circuit shall specify the inputs, outputs, biases, and pouer dissipation, as applicable, in 4.4.3 Grour, D inspection. The group D inspection end-point electrical parameters
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