DLA SMD-5962-84089 REV E-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS QUAD D-TYPE FLIP-FLOP WITH CLEAR MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED B Inactivate device 01EX and 012X for new design. Add vendor CAGE 27014 to case outline “2“. Convert to military drawing format. Editorial changes throughout. 87-12-16 M. A. Frye C Add vendor CAGE F8859. Add device class V criteria. Add table III.

2、Correct data limits in paragraph 1.3. Add case outline X. Update boilerplate. Editorial changes throughout. -les 00-07-19 Raymond Monnin D Correct table II. Update boilerplate to MIL-PRF- 38535 requirements. jak 02-01-18 Thomas M. Hess E Change address. Add JEDEC Standard 7-A reference in paragraphs

3、 2.2 and 4.4.1c. Update boilerplate paragraphs to the current requirements as specified in MIL-PRF-38535. - jak 09-08-21 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHEET REV E E SHEET 15 16 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED

4、BY James Nicklaus DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD D-TYPE FLIP-FLOP, WIT

5、H CLEAR MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 84-09-25 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 14933 84089 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E441-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

6、,-STANDARD MICROCIRCUIT DRAWING SIZE A 84089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applica

7、tion (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For devic

8、e classes M and Q: 84089 01 E A_ Drawing number Device type Case outline Lead finish (see 1.2.2) (see 1.2.4) (see 1.2.5) For device class V: 5962 - 84089 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1

9、.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels a

10、nd are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC175 Quad D-Type flip-flop, with clear 1.2.3 Device class designator. The dev

11、ice class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Devi

12、ce class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction

13、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline

14、 letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or

15、 MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Input clamp current (IIK) . 20 mA Output clamp cur

16、rent (IOK) 20 mA Continuous output current 25 mA Continuous current through VCCor GND 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction

17、temperature (TJ) +175C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time tr, tf): VCC= 2.0 V 0 to 1,000 ns VCC= 4.5 V 0 to 500 ns VCC= 6.0 V 0 to 400 ns 1/ Stresses above the ab

18、solute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full spec

19、ified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot

20、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handb

21、ooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits,

22、Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Stan

23、dard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part

24、 of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 7-A - Standard for Description of 54/74HCXXXX and 54/74HCTXXXX High-Speed CMOS Devices

25、(Copies of these documents are available online at http:/www.eia.org or from the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this dr

26、awing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as spe

27、cified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JA

28、N class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case ou

29、tlines. The case outlines shall be in accordance with 1.2.4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM

30、 2234 APR 97 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switchi

31、ng waveforms and test circuit shall be as specified in figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall a

32、pply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein

33、. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be ma

34、rked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-

35、38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing

36、(see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for

37、this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for devic

38、e classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving

39、 devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offs

40、hore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproducti

41、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C Gro

42、up A subgroups Limits Unit unless otherwise specified Min Max High level output voltage VOHVIN= VIHminimum or VILmaximum IOH= -20 A VCC= 2.0 V 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHminimum or VILmaximum IOH= -4.0 mA VCC= 4.5 V 1 3.98 VCC= 4.5 V 2, 3 3.7 VIN= VIHminimum or VILmaximum IO

43、H= -5.2 mA VCC= 6.0 V 1 5.48 VCC= 6.0 V 2, 3 5.2 Low level output voltage VOLVIN= VIHminimum or VILmaximum IOH= 20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHminimum or VILmaximum IOH= 4.0 mA VCC= 4.5 V 1 0.26 VCC= 4.5 V 2, 3 0.4 VIN= VIHminimum or VILmaximum IOH= 5.2 mA VCC= 6

44、.0 V 1 0.26 VCC= 6.0 V 2, 3 0.4 High level input voltage VIH 2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low level input voltage VIL 2/ VCC= 2.0 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Input capacitance CINVCC= 2 V to 6 V, TC= +25C See 4.4.1c 4 10.0 pF Quiescent supply current I

45、CCVIN= VCC or GND VCC= 6.0 V, IO= 0 A 1 8.0 A 2, 3 160.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

46、 E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max Input leakage current IINVCC= 6.0 V, VIN= VCCor GND 1 0.1 A 2, 3 1.0 Functional tests See 4.4.1b

47、 7, 8 Power dissipation capacitance (per flip-flop) CPDSee 4.4.1c 4 47.0 pF Propagation delay time, CLK to Q or Q tPHL1 tPLH1 3/ TC= +25C CL = 50 pF See figure 4 VCC= 2.0 V 9 150 ns VCC= 4.5 V 30 VCC= 6.0 V 26 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 255 ns VCC= 4.5 V 45 VCC= 6.0 V 3

48、8 Propagation delay time, CLR to Q or Q tPHL2 tPLH2 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 150 ns VCC= 4.5 V 30 VCC= 6.0 V 26 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 255 ns VCC= 4.5 V 45 VCC= 6.0 V 38 Recovery time, CLR inactive to CLK trecTC= +25C CL = 50 pF See figure 4 VCC= 2.0 V 9 100 ns VCC= 4.5 V 20 VCC= 6.0 V 17 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 150 ns VCC= 4.5 V 30 VCC