DLA SMD-5962-06237 REV D-2012 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER SINGLE PRECISION MONOLITHIC SILICON.pdf

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1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to group A subgroups in table I for the following tests: SVR, CMRR, AVD, SR, and GBP. Make change to 4.4.1 and table IIA. -rrp 08-10-20 R. HEBER B Make correction to footnote 1/ under 1.2.4. Changes made to Enhanced Low Dose Rate Sens

2、itivity (ELDRS) paragraph and footnote 5/ under 1.5 due to device being ELDRS free up to 300 krads(Si). Changes made to footnotes 1/ and 3/ in table I due to device being ELDRS free up to 300 krads(Si). -rrp 10-04-06 C. SAFFLE C Make changes to the “L” dimension under figure 1. Update boilerplate pa

3、ragraphs to current MIL-PRF-38535 requirements. - ro 10-11-30 C. SAFFLE D Add footnote to input voltage range limit as specified under paragraph 1.3. Delete RHA level M from the first sentence of footnote 1/ as specified under table I. - ro 12-09-18 C. SAFFLE REV SHEET REV D D D D D SHEET 15 16 17 1

4、8 19 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS A

5、ND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY ROBERT M. HEBER MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, PRECISION, MONOLITHIC SILICON DRAWING APPROVAL DATE 08-09-09 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-06237 SHEET 1 OF 19 DSCC FORM 2233 A

6、PR 97 5962-E464-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documen

7、ts two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance

8、(RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 06237 01 Q X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number

9、 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Gener

10、ic number Circuit function 01 RHF43B Radiation hardened, single, precision, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and

11、qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Flat pack 1/ 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device class

12、es Q and V. _ 1/ Al2O3ceramic header and pullback of 0.01 x 0.02 inches. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FOR

13、M 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage (VCC): Single supply mode VCCwith respect to GND = 18 V Dual supply mode VCC= +9 V, VDD= -9 V Input voltage range (VIN) . VDD-0.3 V to 16 V 3/ Differential input voltage (VID) . 1.2 V 4/ Input Current (IIN) 45 mA Storage temperature range

14、 -65C to +150C Operating temperature range -55C to +150C Lead temperature (soldering, 10 seconds) +260C 5/ Maximum junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) 40C/W Thermal resistance, junction-to-ambient (JA) . 125C/W 1.4 Recommended operating conditions. Supply voltag

15、e (VCC) . 3 V to 16 V Common mode input voltage range (VICM) . VDDto VCCAmbient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. 6/ Maximum total dose available (dose rate = 50 - 300 rads(Si)/s): Device type 01 300 krads(Si) The manufacturer supplying RHA parts on this drawin

16、g has performed a characterization test at 300 krads(Si) to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019, paragraph 3.13.1.1. Therefore, this part may be considered ELDRS free to the tested total dose of 300 krads(Si) at th

17、e low dose rate of 10 mrads(Si)/s. This part is tested to a total dose of 300 krads(Si) at the high dose rate of 50 300 rads(Si)/s. 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reli

18、ability. 3/ The magnitude of the input and output terminals must never exceed VCC+ 0.3 V. 4/ Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 5/ Distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered unt

19、il 3 minutes have elapsed. 6/ For device type 01, this part has been tested and does not demonstrate low dose rate sensitivity at 300 krads(Si). For low dose rate, the radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD- 883, method 1019, condit

20、ion D. For high dose rate, the radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

21、E A 5962-06237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified here

22、in. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microci

23、rcuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or

24、 from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, how

25、ever, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers

26、 Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, constructi

27、on, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block di

28、agram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical

29、performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requ

30、irements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06237 D

31、LA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Offset voltage VIOVCC = +1.5 V, VI

32、CM = 0 V 1 01 -300 +300 V VDD = -1.5 V VICM = VCC-300 +300 VICM = VDD-300 +300 VICM = 0 V 2,3 -500 +500 VICM = VCC-500 +500 VICM = VDD-500 +500 VCC = +8 V, VICM = 0 V 1 -300 +300 VDD = -8 V VICM = VCC-300 +300 VICM = VDD-300 +300 VICM = 0 V 2,3 -500 +500 VICM = VCC-500 +500 VICM = VDD-500 +500 Suppl

33、y current ICCVCC = +1.5 V, VICM = 0 V 1,2,3 01 2.6 mA VDD = -1.5 V VICM = VCC2.6 VICM = VDD2.6 VCC = +8 V, VICM = 0 V 2.9 VDD = -8 V VICM = VCC2.9 VICM = VDD2.9 Input bias current +IIBVCC = +2 V, VICM = 0 V 1 01 -60 60 nA VDD = -2 V 2,3 -100 100 -IIBVCC = +2 V, VICM = 0 V 1 -60 60 VDD = -2 V 2,3 -10

34、0 100 +IIBVCC = +8 V, VICM = 0 V 1 -60 60 VDD = -8 V 2,3 -100 100 -IIBVCC = +8 V, VICM = 0 V 1 -60 60 VDD = -8 V 2,3 -100 100 Input offset current IIOVCC = +2 V, VICM = 0 V 1 01 -15 15 nA VDD = -2 V 2,3 -35 35 VCC = +8 V, VICM = 0 V 1 -15 15 VDD = -8 V 2,3 -35 35 See footnotes at end of table. Provi

35、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. See f

36、ootnotes at end of table. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply rejection ratio SVR +3 V VCC +16 V, VICM= 0 V 4 01 90 dB 5,6 80 Common mode rejection ratio CMRR VDD VICM VCC, VCC = +1.5 V, VDD = -1.5 V 4,5,6

37、01 72 dB VDD VICM VCC, VCC = +8 V, VDD = -8 V 4,5,6 01 72 Large signal voltage gain AVDVICM = 0 V, RL=1 k, VDD + 0.5 V VOUT VCC - 0.5 V 4 01 74 dB VCC = +1.5 V, VDD = -1.5 V 5,6 60 VICM = 0 V, RL =1 k, VDD + 0.5 V VOUT VCC - 0.5 V VCC = +8 V, VDD = -8 V 4 74 5,6 60 Output sink current ISINKVID = -1

38、V, VOUT = +1. 5V, 1 01 20 mA VCC = +1.5 V, VDD = -1.5 V 2,3 15 VID = -1 V, VOUT = +8 V, 1 20 VCC = +8 V, VDD = -8 V 2,3 15 Output source current ISOURCEVID = +1 V, VOUT = -1.5 V, 1 01 15 mA VCC = +1.5 V, VDD = -1.5 V 2,3 10 VID = +1 V, VOUT = -8 V, 1 15 VCC = +8 V, VDD = -8 V 2,3 10 Low level output

39、 voltage VOLVID = -1 V, VICM = 0 V, RL= 1 k connected to VICM, 1 01 -1.4 V VCC = +1.5 V, VDD= -1.5 V 2,3 -1.3 VID = -1 V, VICM = 0 V RL= 10 k connected to VICM, 1 -1.44 VCC = +1.5 V, VDD= -1.5 V 2,3 -1.4 VID =-1 V, VICM = 0 V, RL= 1 k connected to VICM, 1 -7.8 VCC = +8 V, VDD= -8 V 2,3 -7.7 VID =-1

40、V, VICM = 0 V, RL= 10 k connected to VICM, 1 -7.94 VCC= +8 V, VDD = -8 V 2,3 -7.9 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7

41、 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. See footnotes at end of table. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output voltage VOHVID =+1 V, VICM = 0 V, RL= 1 k conn

42、ected to VICM, 1 01 1.4 V VCC = +1.5 V, VDD = -1.5 V 2,3 1.3 VID =+1 V, VICM = 0 V, RL= 10 k connected to VICM, 1 1.44 VCC = +1.5 V, VDD= -1.5 V 2,3 1.4 VID = +1 V, VICM = 0 V RL= 1 k connected to VICM, 1 7.7 VCC = +8 V, VDD = -8 V 2,3 7.6 VID =+1 V, VICM = 0 V RL= 10 k connected to VICM, 1 7.9 VCC

43、= +8 V, VDD = -8 V 2,3 7.8 Slew rate positive SR(+) AV = 5, RL= 1 k, CL = 100 pF, VCC = +1.5 V, VDD = -1.5 V 9 01 2 V/s AV= 5, RL= 1 k, CL = 100 pF, VCC = +1.5 V, VDD = -1.5 V 10,11 1.7 AV= 5, RL= 1 k, CL = 100 pF, VCC = +8 V, VDD = -8 V 9 2 AV= 5, RL= 1 k, CL = 100 pF, VCC = +8 V, VDD = -8 V 10,11

44、1.7 Slew rate negative SR(-) AV= 5, RL= 1 k, CL =100 pF, VCC= +1.5 V, VDD = -1.5 V 9 01 2 V/s AV= 5, RL= 1 k, CL =100 pF, VCC = +1.5 V, VDD = -1.5 V 10,11 1.7 AV= 5, RL= 1 k, CL = 100 pF, VCC = +8 V, VDD = -8 V 9 2 AV= 5, RL= 1 k, CL =100 pF, VCC = +8 V, VDD = -8 V 10,11 1.7 Provided by IHSNot for R

45、esaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06237 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1

46、/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Gain bandwidth product GBP AV= 5, f = 100 kHz, RL= 1 k, CL = 100 pF, VCC= +1.5 V, VDD = -1.5 V 4 01 6 MHz AV= 5, f = 100 kHz, RL= 1 k, CL = 100 pF, VCC = +1.5 V, VDD = -1.5 V 5,6 01 3.5 AV= 5, f = 100

47、kHz, RL= 1 k, CL = 100 pF, VCC = +8 V, VDD = -8 V 4 01 6 AV= 5, f = 100 kHz, RL= 1 k, CL = 100 pF, VCC = +8 V, VDD = -8 V 5,6 01 3.5 1/ RHA devices supplied to this drawing have been characterized through all levels D, P, L, R, and F of irradiation. However, device type 01 is only tested at the “F”

48、level for high and low dose rates. Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ These parts have been characterization tested at low dose rate, see 1.5. 3/ For device type 01, this part has been tested and does not demonstrate low dose rate sensitivity at 300 krads(Si). For low dose rate, the radiation end point limits for the noted parameters are guaranteed for t