DLA MIL-PRF-19500 472 F-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N6350 2N6351 2N6352 AND 2N6353 JAN JANTX JANTXV AND JANHC.pdf

《DLA MIL-PRF-19500 472 F-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N6350 2N6351 2N6352 AND 2N6353 JAN JANTX JANTXV AND JANHC.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 472 F-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N6350 2N6351 2N6352 AND 2N6353 JAN JANTX JANTXV AND JANHC.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、 MILPRF19500/472F 10 October 2012 SUPERSEDING MILPRF19500/472E 9 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N6350, 2N6351, 2N6352, AND 2N6353, JAN, JANTX, JANTXV, AND JANHC Inactive for new design after 7 June 1999 This speci

2、fication is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon

3、 power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MILPRF19500. One level of product assurance is provided for each unencapsulated device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package styles

4、are as follows: 4-pin TO33 in accordance with figure 1 for device types 2N6350 and 2N6351, 3-pin TO66 in accordance with figure 2 for device types 2N6352 and 2N6353, and unencapsulated die in accordance with figure 3 for device type JANHC. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. T

5、ypes PTRJCMax VEB1VEB2VCBO1and VCERICIC(1) IB1TJand TSTGTA= +25C TC= +100C W W C/W V dc V dc V dc A dc A dc A dc C 2N6350 1.0 (2) 5 (3) 20 12 6 80 5 10 0.5 65 to +200 2N6351 1.0 (2) 5 (3) 20 12 6 150 5 10 0.5 65 to +200 2N6352 2.0 (4) 25 (5) 4.0 12 6 80 5 10 0.5 65 to +200 2N6353 2.0 (4) 25 (5) 4.0

6、12 6 150 5 10 0.5 65 to +200 (1) Applies for tp 10 ms, duty cycle 50 percent. (2) Derate linearly 5.72 mW/C for TA +25C. (3) Derate linearly 50 mW/C for TC +100C. (4) Derate linearly 11.4 mW/C for TA +25C. (5) Derate linearly 250 mW/C for TC +100C. AMSC N/A FSC 5961Comments, suggestions, or question

7、s on this document should be addressed to DLA Land and Maritime ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assis

8、t.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 January 2013. INCH-POUND Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 2 1.4 Primary electrical characteri

9、stics. Unless otherwise specified, TA= +25C. hFE(1) |hfe| (1) VBE(ON)1COBOLimits VCE= 5 V dc IC= 5 A dc VCE= 10 V dc IC= 1 A dc VCE= 5 V dc IC= 5 A dc VCB1= 10 V dc, 100 kHz f 1 MHz 2N6350 2N6352 2N6351 2N6353 f = 10 MHz base 2 open Min Max 2,000 10,000 1,000 10,000 5 25 V dc 2.5 pF 120 VCE(SAT)Puls

10、e response (2) Limits RB2E= 100 IC= 5 A dc IB1= 5 mA dc RB2E= 100 IC= 5 A dc IB1= 10 mA dc VCC= 30 V dc IC= 5 A dc 2N6350 2N6352 2N6351 2N6353 tontoffMin Max V dc 1.5 V dc 2.5 s 0.5 s 1.2 (1) Pulsed (see 4.5.1). (2) See figures 4 and 5 for pulse response circuits. 2. APPLICABLE DOCUMENTS 2.1 General

11、. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completene

12、ss of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standa

13、rds, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF

14、DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order o

15、f precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific ex

16、emption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 3 FIGURE 1. Physical dimensions (TO33) and schematic circuit for 2N6350 and 2N6351. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

17、ut license from IHS-,-,-MILPRF19500/472F 4 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 3 CH .184 .260 4.67 6.60 HD .335 .370 8.51 9.40 LC 0.200 TP 5.080 TP 4 LD .016 .021 0.407 0.533 5, 6 LL 1.500 1.750 38.10 44.45 5, 6 L1.050 1.27 5, 6 L2.250 6.35 5, 6 LU .016

18、.019 0.407 0.482 5, 6 TL .029 .045 0.74 1.14 7 TW .028 .034 0.712 0.863 8 P .100 2.54 3 Q .050 1.27 9 r .010 0.254 10 45 TP 45 TP 4 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Internal resistance (typically 750 ohms). This resistor is optional. 3. Dimen

19、sion CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 4. Leads at gauge plane .054 +.001 .000 inch (1.37 +0.03 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) r

20、elative to tab at MMC. The device may be measured by direct methods. 5. Dimension LU applies between dimension L1and dimension L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in dimension L1and beyond dimension LL minimum. 6. All terminals. 7. Dimension TL measured from m

21、aximum HD. 8. Beyond r (radius) maximum, dimension TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Outline in this zone is not controlled. 10. The radius (dimension r) applies to both inside corners of the tab. 11. Terminal designation is as follows: 1 emitter, 2 base (B2), 3 base (

22、B1), 4 collector. The collector shall be connected to the case. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO33) and schematic circuit for 2N6350 and 2N6351 Continued. Provided by IHSNot for ResaleNo reproduction or networking permitte

23、d without license from IHS-,-,-MILPRF19500/472F 5 FIGURE 2. Physical dimensions (3-pin TO66) and schematic circuit for 2N6352 and 2N6353. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 6 Dimensions Symbol Inches Millimeters Notes Mi

24、n Max Min Max CD .620 15.75 CH .250 .340 6.35 8.64 HT .050 .075 1.27 1.91 3 HR .350 8.89 HR1 .115 .145 2.92 3.68 LD .028 .034 0.711 0.863 4 LL .360 .500 9.14 12.70 4 L1.050 1.27 4 MHD .142 .152 3.61 3.86 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 PS1 .093 .105 2.36 2.67 S.570 .590 14.48 14.99

25、T .190 .210 4.83 5.33 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Internal resistance (typically 750 ohms). This resistor is optional. 3. The outline contour is optional. 4. Dimension does not include sealing flanges. 5. All leads. 6. Terminal designati

26、on is as follows: 1 emitter, 2 base (B1), 3 base (B2). The collector shall be connected to the case. 7. Shape of capweld flange is optional and cannot extend beyond dimension HR. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions (3-pin TO66) an

27、d schematic circuit for 2N6352 and 2N6353 Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 7 NOTES: 1. Chip size: .087 x .100 inch .002 inch (2.2098 x 2.54 0.0508 mm). 2. Chip thickness: .010 .0015 inch (0.254 0.0381 mm) no

28、minal. 3. Top metal: Aluminum 30,000 minimum, 33,000 nominal. 4. Back metal: A. Al / Ti / Ni / Ag: 12k / 3k / 7k / 7k minimum, 15k / 5k / 10k / 10k nominal. B. Gold: 2,500 minimum, 3,000 nominal. 5. Backside: Collector. 6. Bonding pad: B1= .016 x .014 inch (0.4064 x 0.3556 mm), B2= .016 x .018 inch

29、(0.4064 x 0.4572 mm), and E = .040 x .008 inch (1.016 x 0.2032 mm). FIGURE 3. Physical dimensions for die JANHC (A-version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 8 3. REQUIREMENTS 3.1 General. The individual item requireme

30、nts shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contr

31、act award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500. IM= The measurement current applied to forward bias the junction for measurement of VBE. IH= The collector current applied to the de

32、vice under test during the heating period. tH= The duration of the applied heating power pulse. tSW= Sample window time during which final VBEmeasurement is made. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MILPRF195

33、00 and figure 1 (TO33) for device types 2N6350 and 2N6351, figure 2 (3-pin TO66) for device types 2N6352 and 2N6353, and figure 3 for unencapsulated die JANHC herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein.

34、 Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. The polarity of the device types shall be as shown on figures 1, 2, and 3. For device types 2N6350 and 2N6351 (TO33), terminal 1 is the emitter, terminal 2 is base (B2

35、), terminal 3 is base (B1), and terminal 4 is the collector. The collector shall be also electrically connected to the case. For device types 2N6352 and 2N6353 (3 pin TO66), terminal 1 is the emitter, terminal 2 is base (B1), terminal 3 is base (B2), and the collector shall be electrically connected

36、 to the case. The connections for unencapsulated die shall be as depicted on figure 3. 3.5 Marking. Marking shall be in accordance with MILPRF19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4,

37、 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability,

38、 or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualificati

39、on inspection shall be in accordance with MILPRF19500, and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 9 4.2.1 Qualification of unencapsulated die. Qualification inspection for unencapsulated die shall be in

40、accordance with appendix G of MILPRF19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests

41、 specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening. 4.3.1 Screening of packaged devices (JANTX and JANTXV levels only). Screening of packaged devices shall be in accordan

42、ce with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MILPRF19500) Measurement JANTX and JANTXV levels only 3c (1) Therm

43、al impedance, see 4.3.1.1 11 ICEX1and hFE112 See 4.3.1.2 13 See table I, subgroup 2 herein ICEX1= 100 percent of initial value or 20 nA dc, whichever is greater hFE1= 25 percent of initial value (1) This test shall be performed anytime after temperature cycling, screen 3a, and does not need to be re

44、peated in screening requirements. 4.3.1.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test method 3131 of MILSTD750 using the guidelines in that test method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s

45、 maximum. The thermal impedance limit used in screen 3c and table I, subgroup 2 herein shall be set statistically by the supplier. See table II, subgroup 4 herein. 4.3.1.2 Power burn-in conditions. Power burn-in conditions shall be as follows: TA= +25C; power shall be applied to achieve TJ= +135C mi

46、nimum and power dissipation of PD 75 percent of maximum rated PTas defined in 1.3. The following details shall apply: a. VCE= 60 V dc for device types 2N6350 and 2N6352. b. VCE= 100 V dc for device types 2N6351 and 2N6353. 4.3.2 Screening of unencapsulated die (JANHC). Screening of JANHC unencapsula

47、ted die shall be in accordance with appendix G of MILPRF19500. The burn-in duration for JANHC level shall follow the JANTX requirements of table EIV of MILPRF19500. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500, and as specified herein. 4.4.1 Group A insp

48、ection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/472F 10 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E