DLA DSCC-DWG-V62 13618-2013 MICROCIRCUIT LINEAR DUAL PERIPHERAL NAND DRIVER MONOLITHIC SILICON.pdf
《DLA DSCC-DWG-V62 13618-2013 MICROCIRCUIT LINEAR DUAL PERIPHERAL NAND DRIVER MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA DSCC-DWG-V62 13618-2013 MICROCIRCUIT LINEAR DUAL PERIPHERAL NAND DRIVER MONOLITHIC SILICON.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ Origi
2、nal date of drawing YY-MM-DD CHECKED BY RAJESH PITHADIA TITLE MICROCIRCUIT, LINEAR, DUAL PERIPHERAL NAND DRIVER, MONOLITHIC SILICON 13-11-07 APPROVED BY CHARLES F. SAFFLE SIZE A CODE IDENT. NO. 16236 DWG NO. V62/13618 REV PAGE 1 OF 13 AMSC N/A 5962-V067-13 Provided by IHSNot for ResaleNo reproductio
3、n or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13618 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance dual peripheral NAND driver microcircuit, with an operating t
4、emperature range of -40C to +85C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/13618 - 01 X E Drawing Dev
5、ice type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 SN65472-EP Dual peripheral NAND driver 1.2.2 Case outline(s). The case outline(s) are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package sty
6、le X 8 MS-012-AA Plastic small outline 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer: Finish designator Material A Hot solder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other Provided by IHSNot
7、for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13618 REV PAGE 3 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) . 7 V maximum 2/ Input voltage (VIN) 5.5 V maximum Inter-emitter vo
8、ltage . 5.5 V maximum 3/ Off state output voltage (VOUT) 70 V Continuous collector or output current . 400 mA 4/ Peak collector or output current (tW10 ms, duty cycle 50%) 500 mA 4/ Absolute maximum junction temperature range (TJ) -40C to +150C Storage temperature range (TSTG) -65C to +150C 1.4 Reco
9、mmended operating conditions. 5/ Supply voltage (VCC) 4.75 V minimum 5 V nominal 5.25 V maximum High level input voltage (VIH) . 2 V minimum Low level input voltage (VIL) 0.8 V maximum Operating free-air temperature range (TA) . -40C to +85C Operating virtual junction temperature (TJ) -40C to +125C
10、1/ Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
11、 absolute-maximum-rated conditions for extended periods may affect device reliability. 2/ Unless otherwise specified, voltage values are with respect to the network GND. 3/ This is the voltage between two emitters, A and B. 4/ Both halves of these dual circuits may conduct rated current simultaneous
12、ly; however, power dissipation averaged over a short time interval must fall within the continuous dissipation rating. 5/ Use of this product beyond the manufacturers design rules or stated parameters is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liabil
13、ity for product used beyond the stated limits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13618 REV PAGE 4 1.5 Thermal characteristics. Thermal metric Symbol Case X Uni
14、t Thermal resistance, junction-to-ambient 6/ JA115.3 C/W Thermal resistance, junction-to-case (top) 7/ JC(TOP)59.7 C/W Thermal resistance, junction-to-board 8/ JB56.2 C/W Characterization parameter, junction-to-top 9/ JT13.5 C/W Characterization parameter, junction-to-board 10/ JB55.6 C/W _ 6/ The t
15、hermal resistance, junction-to-ambient under natural convection is obtained in a simulation on a JEDEC standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a. 7/ The thermal resistance, junction-to-case (top) is obtained by simulating a cold plate test on the pack
16、age top. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. 8/ The thermal resistance, junction-to-board is obtained by simulating in an environment with a ring cold plate fixture to control the printed circuit board (PCB) temperature, as d
17、escribed in JESD51-8. 9/ Characterization parameter, junction-to-top (JT) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 and 7). 10/ Characterization parameter, junction-
18、to-board (JB) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 and 7). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA
19、 LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13618 REV PAGE 5 2. APPLICABLE DOCUMENTS AMERICAN NATIONAL STANDARDS INSTITUTE ANSI SEMI STANDARD G30-88 - Test Method for Junction-to-Case Thermal Resistance Measurements for Ceramic Packages (Applications for copies should b
20、e addressed to the American National Standards Institute, Semiconductor Equipment and Materials International, 1819 L Street, NW, 6 th floor, Washington, DC 20036 or online at http:/www.ansi.org) JEDEC Solid State Technology Association JESD 51-2a - Integrated Circuits Thermal Test Method Environmen
21、t Conditions Natural Convection (Still Air) JEDEC 51-7 - High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages JESD 51-8 - Integrated Circuits Thermal Test Method Environment Conditions Junction-to-Board JEDEC PUB 95 - Registered and Standard Outlines for Semiconductor Dev
22、ices (Applications for copies should be addressed to the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834 or online at http:/www.jedec.org) 3. REQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 her
23、ein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with the manufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLADSCCDWGV62136182013MICROCIRCUITLINEARDUALPERIPHERALNANDDRIVERMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-689043.html