DLA SMD-5962-98580 REV K-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS SCHMITT 16-BIT BIDIRECTIONAL MULTI-PURPOSE TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILIC.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change package designation and add case outline figure. - jak 00-04-11 Monica L. Poelking B Add device type 02. - jak 00-05-30 Monica L. Poelking C Correct supply voltage nomenclature to comply with device characterization. Correct dimension A mi

2、nimum values for case outline X in table of figure 1. Update boilerplate to latest MIL-PRF-38535 requirements. - CFS 01-03-06 Thomas M. Hess D Add device type 03. - CFS 02-05-10 Thomas M. Hess E Add device types 04 and 05. Change load capacitance value for AC tests and add output skew to table IA. U

3、pdate boilerplate. Editorial changes throughout. - LTG 04-07-29 Thomas M. Hess F Add device types 06 and 07. Add figure A-2 to appendix A. Update radiation hardness assurance requirements. - LTG 07-06-27 Thomas M. Hess G Correct the input voltage range specified in paragraph 1.4. - CFS 08-05-05 Thom

4、as M. Hess H Add new device number 08. Add case outline Y for device type 08 in section 1.2.4. - MAA 09-10-05 Thomas M. Hess J To add footnotes 21/ and 22/ for tSKEWand tDSKEWfor device types 01 to 07 in table IA. Update radiation features in section 1.5 and SEP test limit table IB. - MAA 10-12-20 T

5、homas M. Hess K Add equivalent test circuits and footnote 5 to figure 5. Delete class M requirements per updated boilerplate paragraphs. - MAA 12-12-10 Thomas M. Hess REV SHEET REV K K K K K K K K K K K K K K K SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 REV K K K K K K K K K K K K K K K K K

6、K K K SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Charles F. Saffle, Jr. DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD M

7、ICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle, Jr. THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SCHMITT 16-BIT BIDIRECTIONAL AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 99-05-10 MU

8、LTI-PURPOSE TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL K SIZE A CAGE CODE 67268 5962-98580 SHEET 1 OF 49 DSCC FORM 2233 5962-E042-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING D

9、LA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-98580 REVISION LEVEL K SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outli

10、nes and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 98580 01 V X X Federal RHA Device Device Case Le

11、ad stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA

12、 designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic num

13、ber Circuit function 01 54ACS164245S Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs and cold sparing 02 54ACS164245S 1/ Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, and extended

14、 voltage range 03 54ACS164245S 1/ 2/ Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, extended voltage range, and extended industrial temperature range of -40C to +125C 04 54ACS164245SE 1/ Radiation hardened, Schmitt 16-bit bidirectio

15、nal multi-purpose transceiver with three-state outputs, cold sparing, extended voltage range, and enhanced ACs 05 54ACS164245SE 1/ 2/ Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, extended voltage range, extended industrial tempera

16、ture range of -40C to +125C, and enhanced ACs 06 54ACS164245SEI 1/ Radiation hardened, Schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, warm sparing, extended voltage range, enhanced ACs and improved power management 07 54ACS164245SEI 1/ 2/ Radiation har

17、dened, Schmitt 16-bit bidirectional multi-purpose transceiver with three-state outputs, cold sparing, warm sparing, extended voltage range, industrial temperature range of -40C to +125C, enhanced ACs and improved power management 08 54ACS164245 Radiation hardened, Schmitt 16-bit bidirectional multi-

18、purpose transceiver with three-state outputs and cold sparing. _ 1/ Device types 02, 03, 04, 05, 06, and 07 have an extended voltage range. 2/ Device types 03, 05, and 07 have an extended industrial temperature range of -40C to +125C. Provided by IHSNot for ResaleNo reproduction or networking permit

19、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-98580 REVISION LEVEL K SHEET 3 DSCC FORM 2234 APR 97 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as fol

20、lows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flat pack Y See fi

21、gure 1 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage ranges (VDD): 5.0 V supply (VDD1) . -0.3 V dc to +6.0 V dc 3.3 V supply (VDD2) . -0.3 V dc to +6.0 V dc DC input voltage range (VI

22、N): 4/ A port -0.3 V dc to VDD1+ 0.3 V dc B port -0.3 V dc to VDD1+ 0.3 V dc DC output voltage range (VOUT): A port -0.3 V dc to VDD1+ 0.3 V dc B port -0.3 V dc to VDD1+ 0.3 V dc DC input current, any one input (IIN): A port 10 mA B port 10 mA Storage temperature range (TSTG) -65C to +150C Lead temp

23、erature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation at TA= +55C (in still air) (PD) 1.0 W 5/ _ See footnotes on next sheet. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

24、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-98580 REVISION LEVEL K SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. 2/ 3/ 6/ Supply voltage range (VDD): Device type 01 (VDD1) +4.5 V dc to +5.5 V dc or 3.13 V

25、dc to 3.6 V dc Device types 02, 03, 04, 05, 06, and 07 (VDD1) . +4.5 V dc to +5.5 V dc or 3.0 V dc to 3.6 V dc Device type 08 (VDD1) +4.5 V dc to +5.5 V dc or 2.3 V dc to 3.6 V dc Device type 01 (VDD2) +3.13 V dc to +3.6 V dc or +4.5 V dc to +5.5 V dc Device types 02, 03, 04, 05, 06, and 07 (VDD2) .

26、 +3.0 V dc to +3.6 V dc or +4.5 V dc to +5.5 V dc Device type 08 (VDD2) +2.3 V dc to +3.6 V dc or +4.5 V dc to +5.5 V dc Input voltage range (VIN): A port +0.0 V dc to VDD1B port +0.0 V dc to VDD1Control inputs (OE1, OE2, DIR1, DIR2) (for device 01 to 07) . +0.0 V dc to VDD1Output voltage range (VOU

27、T) +0.0 V dc to VDD1Case operating temperature range (TC): Device types 01, 02, 04, 06 and 08 -55C to +125C Device types 03, 05, and 07 . -40C to +125C Maximum input rise or fall time rate (t/V): at VDD1= 4.5 V (for device 01 to 07) 1 ns/V 7/ Maximum input rise or fall time rate (t/V): at VCC= 3.0,

28、4.5 or 5.5 V (for device 08) . 0 to 8 ns/V 7/ 1.5 Radiation features. 8/ Maximum total dose available (dose rate = 50 - 300 rad (Si)/s) 100 Krad (Si) Single event phenomenon (SEP) : Effective LET, no upsets (SEU) (see 4.4.4.4) for device types 01 to 07 80 MeV/(mg/cm2) for device type 08 . 64 MeV/(mg

29、/cm2) Effective LET , no latch-up (SEL) for device types 01-05 120 MeV/(mg/cm2) for device types 06-07 114 MeV/(mg/cm2) for device type 08 . 111 MeV/(mg/cm2) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

30、 performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C for device types 01, 02, 04, 06 and, 08; and -40C to +125C fo

31、r device types 03, 05 and 07. 4/ For cold spare mode (VDD= VSS), VINmay be 0.3 V to the maximum recommended operating VDD+ 0.3 V. 5/ The maximum package power dissipation is calculated by using a junction temperature of 150C, a board trace length of 750 mils and thermal resistance, junction-to-air a

32、mbient (JA) is 95C/W. 6/ Unused inputs must be held high or low to prevent them from floating. 7/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 8/ Radiation testing is performed on the standard evaluation circuit. Provided by IHSNot for ResaleNo repr

33、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-98580 REVISION LEVEL K SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following s

34、pecification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General

35、 Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Draw

36、ings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the e

37、xtent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semicon

38、ductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JEDEC JESD 78 IC Latch-Up Test (Copies of these documents are ava

39、ilable online at http:/www.jedec.org/ or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes prece

40、dence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535, and as specified herein, o

41、r as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. Provided by IHSNot for ResaleNo

42、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-98580 REVISION LEVEL K SHEET 6 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical

43、dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth ta

44、ble shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. 3.2.6 Irradiation test connections. The irradiation test connection

45、s shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case op

46、erating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manuf

47、acturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device

48、 classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approve