DLA SMD-5962-96718 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf

《DLA SMD-5962-96718 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96718 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial 00-07-03 Monica L. Poelking I changes throughout. - tmh A B Changes in accordance with NOR 5962-R331-97. 97-1 0-22 Monica L. Poelking Changes in accordance with NOR 5962-R167-98. 98-09-02

2、 Monica L. Poelking PMIC NIA REV STATUS OF SHEETS PREPAREDBY Thanh V. Nguyen I R EV cccccccccccccc SHEET 12 3 4 5 6 7 8 9 1011 1213 14 STANDARD MICROCIRCUIT DRAW1 NG THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA CHECKED BY Thanh V. Nguyen DEF

3、ENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 95-1 2-27 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, NONINVERTING STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON OCTAL BUFFER/LINE DRIVER WITH THREE- REVISION LEVEL C 5962-96

4、71 8 DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E344-00 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

5、OHIO 43216-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Wh

6、en available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN is as shown in the following example: C - X - V 5962 F 9671 8 01 - I I I I I I I Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4

7、) (see 1.2.5) I Case I Device I Device II Federal RHA (see 1.2.3) SIZE 5962-9671 8 A REVISION LEVEL SHEET C 2 v Drawing number 1.2.1 RHA desiqnator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class

8、M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpe(s). The device type(s) identify the circuit function as follows: Device tvpe Generic number Circuit function o1 02

9、 ACTS244 ACTS244-02 I/ Radiation hardened SOS, advanced CMOS, noninverting octal bufferhne driver with three-state outputs, lTL compatible inputs Radiation hardened SOS, advanced CMOS, noninverting octal bufferhne driver with three-state outputs, lTL compatible inputs 1.2.3 Device class desiqnator.

10、The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

11、A QorV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desiqnator Terminals Packaqe stvle R X CDIP2-T20 20 CDFP4-F20 20 dual-in-line package flat package 1.2.5 Lead finish. The le

12、ad finish is as specified in MIL-PRF-38535 for device classes Q and Vor MIL-PRF-38535, appendix A for device class M. - 1/ Device type -02 is the same as device type -01 except that the device type -02 products are manufactured at an overseas wafer foundry. Device type -02 is used to positively iden

13、tify, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry. USLL tUHM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratinqs. I/ a 31 Supply voltage range (Vcc)

14、 . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) DC output voltage range (VOUT -0.5 V dc to Vcc + 0.5 V dc -0.5 V dc to Vcc + 0.5 V dc DC input current, any one in DC output current, any one output (IoUT) 150 mA Storage temperature range (TSTG) -65C to +1 50C Lead temperature (soldering, 1 O s

15、econds) . +265“C Thermal resistance, junction-to-case (Jc): Case outline R . 24“C/W Case outline X . 28“C/W Case outline R . 72“C/W Case outline X . 107“CNV Thermal resistance, junction-to-ambient (jA): Junction temperature (TJ) +175“C Maximum package power dissipation at TA = +125“C (PD): A/ Case o

16、utline R . 0.69 W Case outline X . 0.47 W STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 1.4 Recommended operatinq conditions. a 31 Supply voltage range (Vcc) . +4.5 V dc to +5.5 V dc Input voltage range (VIN) . +O.O V dc to Vcc Maximum low level input vol Min

17、imum high level input vo Case operating temperature range (Tc) . -55C to +125“C Maximum input rise and fall time at Vcc = 4.5 V (tr, tf) 10 ns/V Radiation features: Output voltage range (VOUT) +O.O V dc to Vcc Total dose 3 x 1 O5 Rads (Si) Single event phenome linear energy threshol 100 MeV/(cm/mg)

18、5/ Dose rate upset (20 ns 1 x 10“ Rads (Si)/s s/ Latch-up . None 5/ Dose rate survivability . 1 x 10 Rads (Si)/s s/ SIZE 5962-9671 8 A REVISION LEVEL SHEET C 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

19、 part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEF

20、ENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. - 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. - 2/ Unless otherwise specified, all

21、voltages are referenced to GND. - 3/ The limits for the parameters specified herein shall apply over the full specified Vcc range and case temperature range of -55C to +125“C unless otherwise noted. - 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly

22、(the derating is based on 8jA) at the following rate: Case R 13.9 mWPC Case X 9.3 mWPC - 5/ Guaranteed by design or process but not tested. USLL tUHM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN DARDS STANDARD MICROCIRCUIT DRAWING

23、 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DEPARTMENT OF DEFENSE SIZE 5962-9671 8 A REVISION LEVEL SHEET C 4 MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. HANDBOOKS DEPARTMENT

24、 OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs). MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Phi

25、ladelphia, PA 191 11 -5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has

26、been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affec

27、t the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to

28、this document. 3.2 Desiqn, construction, and phvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL- PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall b

29、e in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Loqic diaqram. The logic diagram shall be as specified on figure 3. 3.2.5 Switchinq waveform and test

30、 circuit. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation test connections shall be as specified in table 111 herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specifi

31、ed herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The

32、electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space li

33、mitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-P

34、RF-38535, appendix A. 3.5.1 Certification/compIiance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL- PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. USLL tUHM 2234 APR 97 Provided by IHSNot

35、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For

36、 device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affi

37、rm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MI

38、L-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing . STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 3.8 Notification of chanqe for device class M. For device class M, notifi

39、cation to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. SIZE 5962-9671 8 A REVISION LEVEL SHEET C 5 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquirin

40、g activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit qroup assiqnment for device class M. Device class M devices covered by this drawing shall b

41、e in microcircuit group number 37 (see MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Samplinq and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF- 38535 or as modified in the device manufacturers Quality Management (QM)

42、 plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF- 38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-

43、PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteri

44、a for device class M. a. Burn-in test, method 1 O1 5 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

45、 specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1 O1 5. (2) TA = +125“C, minimum. Interim and final electrical test parameters shall be as specified in table IIA herein. b. 4.2.2 Additional criteria for device classes

46、 Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufactu

47、rers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test metho

48、d 1015 of MI L-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes

49、Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). USLL tUHM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER CO