DLA SMD-5962-96717 REV E-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SIL.pdf
《DLA SMD-5962-96717 REV E-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SIL.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-96717 REV E-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SIL.pdf(24页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R330-97. CFS 97-10-22 Monica L. Poelking B Changes in accordance with NOR 5962-R099-98. - THL 98-05-04 Raymond L. Monnin C Add device class T criteria. Editorial changes throughout. - JAK 98-12-09 Monica L. Poe
2、lking D Correct the total dose rate and update RHA levels. - LTG 99-04-28 Monica L. Poelking E Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 05-10-03 Thomas M. Hess REV SHET REV E E E E E E E E E SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV E C D E E D D D E
3、C C C E C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Mo
4、nica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-27 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE- STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268
5、 5962-96717 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E500-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96717 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2
6、234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes
7、are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of t
8、hese parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 96717 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see
9、 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with t
10、he appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ACTS240 Radiation hardened, SOS, advanced CMOS, inverting octal buffer/line driver with three-state
11、outputs, TTL compatible inputs 02 ACTS240-02 1/ Radiation hardened, SOS, advanced CMOS, inverting octal buffer/line driver with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:
12、 Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-P
13、RF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 F
14、lat pack 1/ Device type 02 is the same as device type 01 except that the device type 02 products are manufactured at an overseas wafer foundry. Device type 02 is used to positively identify, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry.
15、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96717 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified
16、 in MIL-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V
17、dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 50 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline R . 24C/W Case outline X 28C/W Thermal resistance, j
18、unction-to-ambient (JA): Case outline R . 72C/W Case outline X 107C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline R . 0.69 W Case outline X 0.47 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc In
19、put voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V Minimum high level input voltage (VIH). VCC/2 Case operating temperature range (TC). -55C to +125C Maximum input rise or fall time at VCC= 4.5 V (tr, tf) 10 ns/V 1.5 Radia
20、tion features: Maximum total dose available (dose rate = 50 300 rad (Si)/s): Device classes M,Q, or V 3 x 105Rads (Si) Device class T. 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 1 x
21、 1011Rads (Si)/s 5/ Latch-up. None 5/ Dose rate survivability 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltage
22、s are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating
23、 is based on JA) at the following rate: Case outline R. 13.9 mW/C Case outline X . 9.3 mW/C 5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96717 DEFENSE SUPP
24、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwi
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