DLA SMD-5962-96681 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4-BIT LATCH 4-TO-16 LINE DECODER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4-BIT闭锁4到6行译码器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96681 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4-BIT LATCH 4-TO-16 LINE DECODER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4-BIT闭锁4到6行译码器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96681 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4-BIT LATCH 4-TO-16 LINE DECODER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4-BIT闭锁4到6行译码器硅单片电路数字微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add Appendix A containing Die information. - CFS 97-07-24 Monica L. Poelking B Correct terminal pin assignments. Editorial changes throughout. - CFS 98-12-14 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 requirements. Editorial changes

2、 throughout. jak 04-04-13 Thomas M. Hess REV SHEET REV B C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C B B C C C C C C B B C B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SU

3、PPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-28 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 4-BIT LATCH/4-TO-16 LINE DECOD

4、ER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96681 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E120-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

5、om IHS-,-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and

6、 space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following exam

7、ple: 5962 R 96681 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535

8、specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ident

9、ify the circuit function as follows: Device type Generic number Circuit function 01 4514B Radiation hardened CMOS, 4-bit latch/4-to-16 line decoder 02 4515B Radiation hardened CMOS, 4-bit latch/4-to-16 line decoder 03 4514BN Radiation hardened CMOS, 4-bit latch/4-to-16 line decoder with neutron irra

10、diated die 04 4515BN Radiation hardened CMOS, 4-bit latch/4-to-16 line decoder with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-ce

11、rtification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline let

12、ter Descriptive designator Terminals Package style J CDIP2-T24 24 Dual-in-line package X CDFP4-F24 24 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction

13、 or networking permitted without license from IHS-,-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc DC inp

14、ut voltage range -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input. 10 mA Device dissipation per output transistor 100 mW Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case J 25C/W Case X 24C/W Therm

15、al resistance, junction-to-ambient (JA): Case J 65C/W Case X 89C/W Junction temperature (TJ) +175C Maximum power dissipation at TA= +125C (PD): 4/ Case J 0.77 W Case X 0.56 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +3.0 V dc to +18 V dc Case operating temperature range

16、 (TC) -55C to +125C Input voltage (VIN) 0 V dc to VDDOutput voltage (VOUT) 0 V dc to VDDRadiation features: Total dose 1 X 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 X 108Rads(S

17、i)/s 5/ Dose rate latchup 2 X 108Rads(Si)/s 5/ Dose rate survivability . 5 X 1011Rads(Si)/s 5/ Neutron irradiated (device types 03 and 04) . 1 X 1014neutrons/cm21/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrad

18、e performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If the device power exceeds packa

19、ge dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case J 15.4 mW/C Case X 11.2 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

20、-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

21、 of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE

22、MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Micro

23、circuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In t

24、he event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The

25、individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The indi

26、vidual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dime

27、nsions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal conne

28、ctions. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirr

29、adiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitt

30、ed without license from IHS-,-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. Th

31、e electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

32、limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL

33、-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For devi

34、ce classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved

35、 source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or fo

36、r device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliver

37、ed to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device c

38、lass M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device

39、class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER CO

40、LUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Unit 1, 3 1/ 5 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 150 1, 3 1/ 1

41、0 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 300 1, 3 1/ 10 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 600 1 10 VDD= 20 V, VIN= 0.0 V or VDDAll 2 1000 M, D, P, L, R 2/ All 1 25 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 10 A 1 0.53 2 1/ 0.36 VDD= 5 V VO= 0.4 V VIN= 0.0 V or VDDAll 3 1/ 0.64 1 1.4 2 1/ 0.

42、9 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDDAll 3 1/ 1.6 1 3.5 2 1/ 2.4 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 4.2 mA 1 -0.53 2 1/ -0.36 VDD= 5 V VO= 4.6 V VIN= 0.0 V or VDDAll 3 1/ -0.64 1 -1.8 2 1/ -1.15 High level output current (source) IOHVDD= 5 V VO= 2.5 V

43、VIN= 0.0 V or VDDAll 3 1/ -2.0 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FO

44、RM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions 55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Unit 1 -1.4 2 1/ -0.9 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 3 1/ -1.6 1 -3.5 2 1/ -2.4 High level output current

45、(source) IOHVDD= 15 V VO= 13.5 V VIN= 0.0 V or VDDAll 3 1/ -4.2 mA Output voltage, high VOHVDD= 5 V, no load 1/ All 1, 2, 3 4.95 V VDD= 10 V, no load 1/ 1, 2, 3 9.95 VDD= 15 V, no load 3/ 1, 2, 3 14.95 Output voltage, low VOLVDD= 5 V, no load 1/ All 1, 2, 3 0.05 V VDD= 10 V, no load 1/ 1, 2, 3 0.05

46、VDD= 15 V, no load 1, 2, 3 0.05 VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V 9 970 VDD= 5 V, VIN= VDDor GND 10, 11 1310 M, D, P, L, R 2/ 9 1310 VDD= 10 V, VIN= VDDor GND 9 1/ 370 Propagation delay 5/ time, strobe or data tPHL1, tPLH1VDD= 15 V, VIN= VDD

47、or GND All 9 1/ 270 ns 9 500 VDD= 5 V, VIN= VDDor GND 10, 11 675 M, D, P, L, R 2/ 9 675 VDD= 10 V, VIN= VDDor GND 9 1/ 220 Propagation delay 5/ time, inhibit tPHL2, tPLH2VDD= 15 V, VIN= VDDor GND All 9 1/ 170 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networkin

48、g permitted without license from IHS-,-,-SIZE A 5962-96681 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions 55C TC +125C unl

49、ess otherwise specified Device type Group A subgroups Min Max Unit Transition time 5/ tTHL, tTLHVDD= 5 V, VIN= VDDor GND All 9 200 ns 10, 11 270 VDD= 10 V, VIN= VDDor GND 9 1/ 100 VDD= 15 V, VIN= VDDor GND 9 1/ 80 VDD= 5 V, VIN= VDDor GND 9 150 VDD= 10 V, VIN= VDDor GND 9 70 Minimum data 1/ 5/ setup time tSVD