DLA SMD-5962-96572 REV D-2007 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射数字的互补金属氧化物半导体 八角三状态输出母线接收器 .pdf

《DLA SMD-5962-96572 REV D-2007 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射数字的互补金属氧化物半导体 八角三状态输出母线接收器 .pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96572 REV D-2007 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《抗辐射数字的互补金属氧化物半导体 八角三状态输出母线接收器 .pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Add IOHand IOLtests. Add Schmitt trigger threshold tests for device type 02. Change table IB. Editorial changes throughout. - JAK 96-11-19 Monica L. Poelking B Changes in accordance with NOR 5962-R259-97. - CFS 97-04-22 Monica

2、 L. Poelking C Add die appendix. Update boilerplate. - CFS 00-07-12 Monica L. Poelking D Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. - TVN 07-04-25 Thomas M. Hess REV SHET REV

3、D D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 26 REV D D D D D D D D D C C C D D REV STATUS OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mi

4、l APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-05-30 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-96572 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPART

5、MENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL D SHEET 1 OF 26 DSCC FORM 2233 APR 97 5962-E181-07Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96572 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS C

6、OLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are availa

7、ble and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96572 01 V X A Federal RHA Device Device Case Lead stock class designator type

8、class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA

9、 marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS24

10、5 Radiation hardened, octal bus transceiver with three-state outputs 02 54ACS245S Radiation hardened, Schmitt octal bus transceiver with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class

11、Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as desi

12、gnated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for devic

13、e class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96572 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/

14、Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C

15、Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0

16、.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC). -55C to +125C 1.5 Radiation features. 5/ Total dose 1 x 106Rads (Si) Single event phenomenon (SEP) effective: Linear energy threshold (LET

17、), no upsets (see 4.4.4.4). 80 MeV/(mg/cm2) 6/ Linear energy threshold (LET), no latch-up (see 4.4.4.4). 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s 6/ Latch-up. None Dose rate survivability 1 x 1012Rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause perma

18、nent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature r

19、ange of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits are guaranteed by design or process but not production tested unless sp

20、ecified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96572 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FOR

21、M 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitatio

22、n or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFE

23、NSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Aven

24、ue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. AMERIC

25、AN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from: ASTM International, 100 Barr Harbor Dr

26、ive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless

27、 a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in t

28、he QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircui

29、t die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. T

30、he case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagrams. The logic diagrams shall be as specified on figure 3. Provide

31、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96572 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.5 Switching waveforms and test circuit. The switching

32、 waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical p

33、erformance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for eac

34、h subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not

35、 marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/complia

36、nce mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance sha

37、ll be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein

38、). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535

39、, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for

40、device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring

41、activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be

42、in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96572 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FO

43、RM 2234 APR 97 TABLE IA. Electrical performance characteristics. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Min Max Unit 01 1, 2, 3 3.15 M, D, P, L, R, F, G, H 3/ 01 4.5 V 1 3.15 01 1, 2, 3 3.85 High level input voltage VIH M, D

44、, P, L, R, F, G, H 3/ 01 5.5 V 1 3.85 V 01 1, 2, 3 1.35 M, D, P, L, R, F, G, H 3/ 01 4.5 V 1 1.35 01 1, 2, 3 1.65 Low level input voltage VIL M, D, P, L, R, F, G, H 3/ 01 5.5 V 1 1.65 V 02 1, 2, 3 3.15 M, D, P, L, R, F, G, H 3/ 02 4.5 V 1 3.15 02 1, 2, 3 3.85 Schmitt trigger, positive-going threshol

45、d VT+ M, D, P, L, R, F, G, H 3/ 02 5.5 V 1 3.85 V 02 1, 2, 3 1.35 M, D, P, L, R, F, G, H 3/ 02 4.5 V 1 1.35 02 1, 2, 3 1.65 Schmitt trigger, negative-going threshold VT- M, D, P, L, R, F, G, H 3/ 02 5.5 V 1 1.65 V 02 1, 2, 3 0.6 1.5 Schmitt trigger, range of hysteresis VH M, D, P, L, R, F, G, H 3/ 0

46、2 4.5 V 1 0.6 1.5 V For all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A All 1, 2, 3 4.25 High level output voltage VOH M, D, P, L, R, F, G, H 3/ All 4.5 V 1 4.25 V For all inputs affecting output under test, VIN= VDDor VSSIOL= 100 A All 1, 2, 3 0.25 Low level output voltage VOL M,

47、D, P, L, R, F, G, H 3/ All 4.5 V 1 0.25 V For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 1, 2, 3 +1.0 Input current high IIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 +1.0 A For input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 1, 2, 3 -1.0 Input current low IIL M,

48、 D, P, L, R, F, G, H 3/ All 5.5 V 1 -1.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96572 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Min Max Unit For output under test, VOUT= VDD - 0.4 V VIN= VDDor