DLA SMD-5962-95682 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT NOR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输入硅单片电路线型微电路》.pdf

《DLA SMD-5962-95682 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT NOR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输入硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95682 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT NOR GATE MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输入硅单片电路线型微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R040-96 96-01-30 Monica L. PoelkingB Changes in accordance with NOR 5962-R060-9898-03-24 Raymond L. MonninC Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorialchanges throughout. - tmh00-08-25 Mo

2、nica L. PoelkingREVSHEETREV CCCCCCCCSHEET 15 16 17 18 19 20 21 22REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Thanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY

3、ALLDEPARTMENTSAPPROVED BYThomas M. HessAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-08-28MICROCIRCUIT, DIGITAL, RADIATIONHARDENED HIGH SPEED CMOS, QUAD 2-INPUTNOR GATE, MONOLITHIC SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-95682SHEET1 OF 22DSCC FORM 2233APR 97 5962-E394

4、-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET

5、2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Numbe

6、r (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 R 95682 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock class designator t

7、ype class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA

8、 marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 HCTS02 Radi

9、ation hardened, SOS, high speed CMOS,quad 2-input NOR gate, TTL compatible inputs1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requiremen

10、ts for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Termina

11、ls Package styleC CDIP2-T14 14 dual-in-line packageX CDFP3-F14 14 flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

12、ense from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VCC). -0.5 V dc to +7.0 V dcDC input voltage range (VIN). -0.5 V dc to VCC + 0.5 V

13、dcDC output voltage range (VOUT) -0.5 V dc to VCC + 0.5 V dcDC input current, any one input (IIN) . 10 mADC output current, any one output (IOUT) 25 mAStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds). +265CThermal resistance, junction-to-case (JC):Case outline C

14、 24C/WCase outline X 30C/WThermal resistance, junction-to-ambient (JA):Case outline C 74C/WCase outline X 116C/WJunction temperature (TJ) . +175CMaximum package power dissipation at TA = +125C (PD): 4/Case outline C 0.66 WCase outline X 0.43 W1.4 Recommended operating conditions. 2/ 3/Supply voltage

15、 range (VCC). +4.5 V dc to +5.5 V dcInput voltage range (VIN). +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL). 0.8 VMinimum high level input voltage (VIH) VCC/2Case operating temperature range (TC) -55C to +125CMaximum input rise and fall time at

16、VCC = 4.5 V (tr, tf) 100 ns/VRadiation features:Total dose 2 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/Dose rate upset (20 ns pulse) . 1 x 1010Rads (Si)/s 5/Latch-up None 5/Dose rate survivability . 1 x 1012Rads (Si)

17、/s 5/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Departmen

18、t of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.1/ Stresses above the absolute maximum rating may cause permanent damage to the

19、 device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to GND.3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of -55C to +125

20、C unless otherwise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating isbased on JA) at the following rate:Case C 13.5 mW/CCase X 8.6 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction

21、 or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 97STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration

22、Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are

23、available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this documen

24、t, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufact

25、urers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1

26、Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A a

27、nd herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth table. The truth table shall be as specified on figure 2.3.2.4 Logic diagram. The logic diag

28、ram shall be as specified on figure 3.3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein.3.3 Electrical performance characte

29、ristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the fullcase operating temperature range.3.4 Electrical test requirements. The electrical t

30、est requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where mark

31、ing of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535

32、. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-

33、38535, appendix A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 973.6 Certificate of compliance. For device cla

34、sses Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source

35、of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device cl

36、ass M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliveredto this dra

37、wing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSC

38、C, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices co

39、vered by this drawing shall be inmicrocircuit group number 36 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers

40、 Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in

41、accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 A

42、dditional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test c

43、ircuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for device cla

44、sses Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufact

45、urers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod

46、1015 of MIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V

47、. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networkin

48、g permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-95682DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.Limits 2/Test Symbol Test conditions 1/-55C TC +125Cunless otherwise spe

49、cifiedDevicetypeVCCGroup AsubgroupsMin MaxUnitFor all inputs affectingoutput under testVIN= 2.25 V or 0.8 VFor all other inputsVIN= VCCor GNDIOH= -50 AAll 1, 2, 3 4.40M, D, L, R3/All4.5 V14.40For all inputs affectingoutput under testVIN= 2.75 V or 0.8 VFor all other inputsVIN= VCCor GNDIOH= -50 AAll 1, 2, 3 5.40Hig