DLA SMD-5962-95671 REV B-2006 MICROCIRCUIT LINEAR RADIATION HARDENED WIDEBAND HIGH IMPEDENCE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射多种频率的高电阻运算放大器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95671 REV B-2006 MICROCIRCUIT LINEAR RADIATION HARDENED WIDEBAND HIGH IMPEDENCE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射多种频率的高电阻运算放大器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95671 REV B-2006 MICROCIRCUIT LINEAR RADIATION HARDENED WIDEBAND HIGH IMPEDENCE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射多种频率的高电阻运算放大器硅单片电路线型微电路》.pdf（16页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to the descriptive designator under 1.2.4. Change ratings values under 1.3. Editorial changes throughout. - lgt 99-06-24 R. MONNIN B Add enhanced low dose rate footnote under paragraph 1.5 and Table I. Delete accelerated aging test,

2、neutron test, dose rate induced latch up test, and dose rate burnout test from paragraph 4.4.4. Delete neutron test and latch up test from 1.5. - ro 06-11-14 R. MONNIN REV SHET REV B SHET 15 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED

3、 BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-0

4、8-30 MICROCIRCUIT, LINEAR, RADIATION HARDENED, WIDEBAND, HIGH IMPEDANCE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95671 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E036-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without

5、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q

6、 and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the foll

7、owing example: 5962 D 95671 01 V P X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PR

8、F-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(

9、s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-2600RH Radiation hardened, D.I. wideband, high impedance, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as foll

10、ows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outl

11、ine(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

12、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage b

13、etween +VSand -VS. 40 V Differential input voltage (VIND) 12 V Voltage at either input terminal . +VSto -VSPeak output current . Full short circuit protection Maximum package power dissipation at TA= +125 C (PD) . 0.44 W 2/ Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C

14、Lead temperature (soldering 10 seconds) . +275C Thermal resistance, junction-to-case (JC) . 30C/W Thermal resistance, junction-to-ambient (JA) 115C/W 1.4 Recommended operating conditions. Supply voltage range (VS) . 15 V Common-mode input voltage (VCMIN) (+VS- -VS) Load resistance (RL) . 2 k Ambient

15、 operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 10 Krads (Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

16、 of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDAR

17、DS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability

18、. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly. The derating is based on JAat the following rate of 8.7 mW/C. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point

19、 limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS

20、 COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or

21、 http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence.

22、Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modi

23、fied in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices

24、and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline

25、shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation paramet

26、er limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the

27、 subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible du

28、e to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordan

29、ce with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of complianc

30、e. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as

31、an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and h

32、erein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L

33、EVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput offset voltage VIOVCM= 0 V 1 01 -4 +4 mV 2, 3 -6 +6M, D 1 -6 +6 Input offset adjustmen

34、t +VIOAD4/ 1, 2, 3 01 VIO- 1 mV M, D 1 VIO- 1 -VIOAD4/ 1, 2, 3 VIO- 1 M, D 1 VIO- 1 Input bias current +IIBVCM= 0 V, +RS= 100 k, 1 01 -10 +10 nA -RS= 100 2, 3 -40 +40 M, D 1 -40 +40 -IIBVCM= 0 V, +RS= 100 , 1 -10 +10 -RS= 100 k 2, 3 -40 +40 M, D 1 -40 +40 Input offset current IIOVCM= 0 V, +RS= 100 k

35、, 1 01 -10 +10 nA -RS= 100 2, 3 -50 +50 M, D 1 -50 +50 Common mode rejection ratio +CMRR VCM= +10 V, +V = +5 V, -V = -25 V, VOUT= -10 V 1, 2, 3 01 80 dB M, D 1 80 -CMRR VCM= -10 V, +V = +25 V, -V = -5 V, VOUT= +10 V 1, 2, 3 80 M, D 1 80 Output voltage swing +VOUTRL= 2 k 1, 2, 3 01 +10 V M, D 1 +10 -

36、VOUTRL= 2 k 1, 2, 3 -10 M, D 1 -10 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC F

37、ORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output current +IOUTVOUT= -10 V 1 01 +6 mA 2, 3 +5M, D 1 +5 -IOUTVOUT= +10 V 1 -6 2, 3 -5 M, D 1 -5 +I

38、CCVOUT= 0 V, IOUT= 0 mA 1 01 +3.7 mA Quiescent power supply current 2,3 +4 M, D 1 +4 -ICCVOUT= 0 V, IOUT= 0 mA 1 -3.7 2, 3 -4 M, D 1 -4 Power supply rejection ratio +PSRR +VS= +10 V and -VS= -15 V, +VS= +20 V and -VS= -15 V, 1, 2, 3 01 80 dB VSUP= 5 V M, D 1 80 -PSRR +VS= +15 V and -VS= -10 V, +VS=

39、+15 V and -VS= -20 V, 1, 2, 3 80 VSUP= 5 V M, D 1 80 +ISCVOUT= 1 V, RL= 10 , 5/ 1 01 50 mA Output short circuit current CL= 50 pF 2 45 3 60 -ISCVOUT= -1 V, RL= 10 , 5/ 1 -50 CL= 50 pF 2 -45 3 -60 Quiescent power consumption PC VOUT= 0 V, 5/ 6/ IOUT= 0 mA, CL= 50 pF 1, 2, 3 01 120 mW See footnotes at

40、 end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance cha

41、racteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max+AVOLVOUT= 0 V and +10 V, 4 01 100 kV/V Large signal voltage gain RL= 2 k 5, 6 50 M, D 4 50 -AVOLVOUT= 0 V and -10 V, 4 100 RL= 2 k 5, 6 50 M, D 4 50 Slew

42、 rate +SR VOUT= -5 V to +5 V, measured at 25% and 75% 4 01 4 V/s points, CL= 100 pF, RL= 2 k, AVCL= +1 V/V 5, 6 3 M, D 4 3 -SR VOUT= +5 V to -5 V, measured at 75% and 25% 4 4 points, CL= 100 pF, RL= 2 k, AVCL= +1 V/V 5, 6 3 M, D 4 3 Overshoot +OS VOUT= 0 V to 200 mV, 4 01 40 % CL= 100 pF, RL= 2 k, A

43、VCL= +1 V/V 5, 6 50 M, D 4 50 -OS VOUT= 0 V to -200 mV, 4 40 CL= 100 pF, RL= 2 k, AVCL= +1 V/V 5, 6 50 M, D 4 50 Differential input resistance RINVCM= 0 V, RL= 2 k, 5/ CL= 50 pF, TA= +25C 4 01 100 M See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted w

44、ithout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95671 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwis

45、e specified Group A subgroups Device type Limits Unit Min MaxFull power bandwidth FPBW VPK= 10 V, 5/ 7/ RL= 2 k, CL= 50 pF, TA= +25C 4 01 50 kHz Minimum closed loop stable gain CLSG RL= 2 k, CL= 50 pF, 5/ TA= -55C and +125C 5, 6 01 1 V/V Rise and fall time TRRVOUT= 0 V to 200 mV measured at 10% to 9

46、0%, 9 01 60 ns CL= 100 pF, RL= 2 k, AVCL= +1 V/V 10, 11 70 M, D 9 70 TRFVOUT= 0 V to -200 mV measured at 10% to 90%, 9 60 CL= 100 pF, RL= 2 k, AVCL= +1 V/V 10, 11 70 M, D 9 70 1/ Unless otherwise specified, device tested at +VS= +15 V, -VS= -15 V, source resistance (RS) = 100 , load resistance (RL)

47、= 500 k, VOUT= 0 V. See figure 3. 2/ Devices supplied to this drawing meet all levels M and D of irradiation. However, this device is only tested at the D level. Pre and Post irradiation values are identical unless otherwise specified in table I. 3/ These parts may be dose rate sensitive in a space

48、environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 4/ Offset adjustment range is VIO(measured) 1 mV minimum referred to output. This test is for functionality only to assure adjustment through 0 V. 5/ Guaranteed, if not tested, to the limits specified in table I. 6/ Quiescent power consumptio