DLA SMD-5962-90864 REV A-1993 MICROCIRCUIT DIGITAL HCMOS MULTIFUNCTION PERIPHERAL MONOLITHIC SILICON《硅单块 高速互补金属氧化物半导体多功能边缘的数字微型电路》.pdf

《DLA SMD-5962-90864 REV A-1993 MICROCIRCUIT DIGITAL HCMOS MULTIFUNCTION PERIPHERAL MONOLITHIC SILICON《硅单块 高速互补金属氧化物半导体多功能边缘的数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90864 REV A-1993 MICROCIRCUIT DIGITAL HCMOS MULTIFUNCTION PERIPHERAL MONOLITHIC SILICON《硅单块 高速互补金属氧化物半导体多功能边缘的数字微型电路》.pdf（31页珍藏版）》请在麦多课文档分享上搜索。

1、DATE (YR-MO-DA) LTR DESCRIPTION A Added two new packages, case outline letters Z and U. Adding case outline U, figure 1. Adding 93-10-25 terminal connection and Z in figure 2. Editorial changes throughout document. APPRO VED Monica L. Poelking REV STATUS OF SHEETS REV SHEET REV SHEET PMIC NfA AAA 15

2、 16 17 STANDARD1 ZED MILITARY DRAUIiQG SIZE A THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CAGE CODE 5962-90864 67268 AMSC NIA DESC FORM 193 JUL 91 123 SHEET PREPARED BY Phu H. Nguyen CHECKED BY Tim H. Noh APPROVED BY Monica L. Poelking DRAWING APPRO

3、VAL DATE 92-04-10 REVISION LEVEL A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, HCMOS MULTIFUNCTION PERIPHERAL, MONOLITHIC SILICON SHEET 1 OF 30 5962-E359-93 DISTRIRUTION STATEMENT A. Approved for public release; distribution is unlimited. Licensed by Information Handl

4、ing ServicesSMD-5962-908b4 REV A = 39996a9b 0050899 822 STANDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL I. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance

5、classes consisting of military high reliability (device classes 8, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B

6、 microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. available, a choice of Radiation Hardness Assurance (RHAI levels are reflected in the PIN. When 1.2 M. The PIN shall be as shown in the following example: 59

7、62 - W864 X X -7- I I I L Y- I T I I I Lead Case Devi ce Devi ce II Federal RHA stock class designator type c Lass outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes M, B, and S RHA marked devices s

8、hall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. the MIL-1-38535 specified RHA levels and shatl be markcd with the appropriate RHA designator. non-RHA device. Device classes and V RHA marked devices shall meet A dash (-1 indicates a 5962-90864 S

9、HEET 1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Circuit function Devi ce type Generic number Frequency o1 02 03 68C901B-4 4.0 MHz HCMOS multifunction peripheral 68C901B-5 5.0 MHr HCMOS multifunction peripheral 68CWlB-8 8.0 MHZ HCMOS multifunction periphe

10、ral 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL

11、-STD-883 B or S Q or V Certification and qualification to MIL-M-38510 Certification and qualification to MIL-1-38535 1.2.4 Case outline($). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desianator Terminals Packaqe style X GDIPI-T48 or CDIP2-T4

12、8 48 Y CQCCI-N52 52 2 CHGA15-P68 68 U See figure 1 52 Dual-in-line Leadless chip carrier Leaded chip carrier Pin grid array - 11 1.2.5 Lead finish. The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-1-38535 for classes Q and V. for use in specifications when lead fin

13、ishes A, B, and C are considered acceptable and interchangeable without preference. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The “XI designation is DESC FORM 193A JUL 91 Licensed by Information Handling ServicesSMD-5962-90b4 REV A 9999996 0050900 374 I 1.3 Absolute

14、 maximum ratinqc. i/ - - I/ - 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. maximum levels may degrade performance and affect reliability. Values will be added when they become available. Extended operation at the I STANDARDIZED SIZE 5962-90864 MILITARY DRAW

15、ING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET Supply voltege range, referenced to ground (Vcc) Input voltage Storage temperature range Maximum power dissipation (PD) . Lead temperature (soldering, 10 seconds) Maximum operating junction temperature (T ) Thermal resis

16、tance, junction-to-case (oJcj: . Cases X, Y and 2 . CaseU -0.3 V dc to +7.0 V dC -0.3 V dc to +7.0 V dc -55C to 150C 55 mW t27OoC +170C See MIL-STD-1835 10“C/W 4.5 V dc minimum to 5.5 V dc maximum -0.3 v dc to 6c8 V dc Supply voltage range (VCc) . High level input voltage range (VI LOW level input v

17、oltage range v,Y . : . Frequency of operation: . 2.0 V dc to V Devicetype01 1.0 MHz to 4.0 MHz Devicetype02 1.0 MHz to 5.0 MHz Devicetype03 . 1.0 MHz to 8.0 MHz Case operating temperature range (T -55C to +125OC . C 1.5 Diqital tonic testing for device classes Q and V. Fault coverage measurement of

18、manufacturing logic tests (MIL-STD-883, test method 5012) XX percent 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specifications, standards, bulletin, and handbook. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Depar

19、tment of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATIONS MIL I TARY MIL-M-38510 - Microcircuits, General Specification for. MIL-1-38535 - integrated Circuits, Manufacturing, General Specification

20、for. STANDARDS RILITARY MIL-STD-480 MIL-STD-883 MIL-STD-1835 - Configuration Control-Engineering Changes, Deviations and Waivers. - Test Methods and Procedures for Microelectronics. - Microcircuit Case Outlines. BULLETIN M IL ITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDs) DESC FOR

21、M 193A JUL 91 Licensed by Information Handling ServicesSMD-59b2-908b4 REV A m 999999b 0050901 200 = STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 HANDBOOK MILITARY MIL-HDBK-780 - Standardized Mi litary Drawings. (Copies of the specifications, standards, bulletin,

22、 and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein

23、, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. The individual it

24、em requirements for device classes B and S shall be in accordance with MIL-M-38510 and as specified herein. included in this SMD. MIL-1-38535, the device manufacturers Quality Management (QM) plan, and as specified herein. Item requirements. For device classes 6 and S, a full electrical characteriza

25、tion table for each device type shall be The individual item requirements for device classes GI and V shall be in accordance with 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-M-38510 for device classes M, B, and S a

26、nd MIL-1-38535 for device classes Q and V and herein. 3.2.1 Case outlines. 3.2.2 Terminal connections. 3.2.3 Block diaqram. 3.2.4 Output load circuits and waveforms. The output load circuits and waveforms shall be as specified on figure The case outlines shall be in accordance with 1.2.4 herein and

27、figure 1. lhe terminal connections shall be as specified on figure 2. The block diagram shall be as specified on figure 3. 4. 3.2.5 Radiation exposure circuit. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified The radiation exposure circuit s

28、hall be as specified when available. herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. The electrical test requirements shall be the subgroups specified in table II. 3.4

29、Electrical test requirements. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be ma

30、rked as listed in MIL-BUL-103. Q and V shall be in accordance with MIL-1-38535. Marking for device classes B and S shall be in accordance with MIL-M-38510. Marking for device classes 3.5.1 Certification/compliance mark. The compliance mark for device class M shall be a “C“ as required in MIL-STD-883

31、 (see 3.1 herein). in MIL-M-38510. The certification mark for device classes B and C shall be a “J“ or “JAN“ as required The certification mark for device classes Q and V shall be a “QML“ as required in MIL-1-38535. 3.6 Certificate of Compliance. For device class M, a certificate of compliance shall

32、 be required from a manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.3 herein). classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.2 herein). The

33、 certificate of compliance submitted to DESC-EC prior to Listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requirements of MIL-1-38535 an

34、d the requirements herein. For device 3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein) or device classes B and C in MIL-M-38510 or for device classes Q and V in MIL-1-38535 shall be provided with each lot of microcircuits del

35、ivered to this drawing. SIZE 5962-90864 A REVISION LEVEL SHEET DESC FORM 193A JUL 91 Licensed by Information Handling ServicesSMD-5952-90864 REV A 9999996 0050902 147 w I STANDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 3.8 Notification of chan

36、ge for device class M. For device class M, notification to DESC-Et of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-480. 3.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acq

37、uiring activity Offshore documentation retain the option to review the manufacturerls facility and applicabie required documentation. shall be made available onshore at the option of the reviewer. 3.10 Microcircuit qroup assignment for device classes M, B, and S. Device classes M, 8, and S devices c

38、overed by this drawing shall be in microcircuit group number 105 (see MIL-M-38510, appendix E). 5962-90864 SHEET 3.11 Serialization for device class S. All device class S devices shall be serialized in accordance with MIL-M-38510. I 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For de

39、vice class N, sampling and inspection procedures shall be in accordance with section 4 of MIL-M-38510 to the extent specified in MIL-STD-883 (see 3.1 herein). sampling and inspection procedures shall be in accordance with MIL-M-38510 and method 5005 of MIL-STD-883, except as modified herein. MIL-1-3

40、8535 and the device manufacturers QH plan. For device classes 8 and S, For device classes Q and Y, sampling and inspection procedures shall be in accordance with 4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices

41、 prior to quality conformance inspection. For device classes B and C, screening shall be ln accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to qualification and quality conformance inspection. For device cLasses Q and V, screening shall be in accordance with M

42、IL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes M, 8, and S. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, 8, C, or D. For device class M, the test circuit shall be maint

43、ained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. For device classes M, 6, and S, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the in

44、tent specified in test method 1015. For device classes 6 and S, the test circuit shall be submitted to the qualifying ectivity. (2) T = +125“C, minimum. A b. Interim and final electrical test parameters shall be as specified in table II herein. I 1 4.2.2 Additional criteria for device classes Q and

45、V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. maintained under document revision level control of the device manufacturers Technology Review Board (TRE) in accor

46、dance with MIL-1-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. Interim and final electrical test par

47、ameters shall be as specified in table II herein. Additional screening for device class Y beyond the requirements of device class O. shall be as specified in appendix B of MIL-1-38535. The burn-in test circuit shall be b. c. I 4.3 Qualification inspection. I DESC FORM 193A JUL 91 Licensed by Informa

48、tion Handling ServicesConditions Test Symbol -55OC 5 T 5 +125C Group A vCc = s.6 v tlm I/ subgroups unless otherwise specified STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 LOW level input voltage for all inputs - 2/ I VIL I vcc = 5.5 v SIZE 5962-90864 A REVISION

49、 LEVEL SHEET I. 2f High level input voltage for at1 VIH, vcc = 5.5 v inputs (except XTALI, XTALZ, CLK) High level input voltage for (XTALI, I VIH2 1 Vcc = 5.5 V XTALZ, CLK) Low level output voltage (except DTACK) I I VOL 1 ;cc f 4.5 V, I = 2.0 mA N - viH min mx High leveloutput voltage OH (except DTACK) :i 1 4.5 V, IOU = -120 PA I IH min IL max Supply current Outputs open Icc = 5.5 V ICc Input Leakage IN VIN = o v to 5.5 v current I ILOH Three-state input current in float VOUT = 2.4 v to VtC ILOL VOUT = 0.5 v I I - VOUT = 2.4 v, VCC = 5.5 v OH DTACK output sou