DLA SMD-5962-89758-1992 MICROCIRCUITS DIGITAL FAST 9-BIT BUFFERED NON-INVERTING LATCH THREE-STATE OUTPUT MONOLITHIC SILICON《硅单片 装有三态输出的的9位缓冲同向锁存器 高速数字微型电路》.pdf
《DLA SMD-5962-89758-1992 MICROCIRCUITS DIGITAL FAST 9-BIT BUFFERED NON-INVERTING LATCH THREE-STATE OUTPUT MONOLITHIC SILICON《硅单片 装有三态输出的的9位缓冲同向锁存器 高速数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89758-1992 MICROCIRCUITS DIGITAL FAST 9-BIT BUFFERED NON-INVERTING LATCH THREE-STATE OUTPUT MONOLITHIC SILICON《硅单片 装有三态输出的的9位缓冲同向锁存器 高速数字微型电路》.pdf(16页珍藏版)》请在麦多课文档分享上搜索。
1、Y 4 I LTR i SMD-5962-89758 59 W 999999b OOLL569 9 i DATE (YR-MO-DA) APPROVED DESCRIPTION REVISIONS I I REV SHEET REV SHEET 15 REV STATUS REV OF SHEETS 12 3 4 5 6 7 8 9 1011 121314 SHEET PREPARED BY DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 PMIC N/A STANDARDIZED MILITARY DRAWING MICROCIRCU
2、ITS, DIGITAL, FAST, 9-BIT BUFFERED NON-INVERTING LATCH, THREE- STATE OUTPUT, MONOLITHIC SILICON THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 5962-89758 ANSC N/A ISION LEVEL 1 OF 15 I SHEET I I )ESC FORW 193 JUL 91 5962-ES1 7-92 DISTRIBUTION STATEMENT
3、 A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-89758 59 9999996 0011570 5 I I. i i Device type (1.2.4. :I .1 byawjng number 12.1 DevTce type(?.). The device TypeTS) shall identlyy
4、. 2 circuit Tunction as POih3ws: Device type Generic number .cmgj3 f.WC%$?G O1 02 o3 54F CT45A 9-bit buffered nnn-%we with three-state output 9-b?t buffered hOrkhVt2 three-state output, TTL compaaibie Pb4t bufTered Bon-lmerting iatch, rri th three-state output, T74 cmpat“ite 5 4F T843C Supply voitag
5、e range- - - = - - - - - - - - - - - Input voitsage range- - - - - - - = - - - - - - - - - Output voltage range - - - - - - - a - - - - - - - - bC input ,diade curmnt O - - - - - - - - - - - - bt output rdlade current (io e.g., los. STANDAWEZED DES% P-liM P93A JUL 91 Provided by IHSNot for ResaleNo
6、reproduction or networking permitted without license from IHS-,-,-2. APPLICABLE DOCUMENTS SMD-5962-87758 59 W 9999996 0011571 7 I 2.1 Government specification, standard, and bulletin. Unless otherwise specified, the following specification, standard, and bulletin of the issue listed in that issue of
7、 the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent Specified herein. SPECIFICATION MILITARY MIL-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for M
8、icroelectronics. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDs) (Copies of the specification, standard, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contr
9、acting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of NIL-STD
10、-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. 3.2 Desiqn, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-M-38510 and herein. 3.2.1 Terminal connections. 3.2.2
11、 Truth table. The terminal connections shall be as specified on figure 1. The truth table shall be as specified on figure 2. 3.2.3 Loqic diagram. 3.2.4 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. The logic diagram shall be as
12、 specified on figure 3. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II.
13、 The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be marked with the PIN listed in 1.2 herein. herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103 (see 6.
14、6 STANDARDIZED 5962-89758 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-8975B 59 I 9999996 0011572 9 T TABLE I. Electrical perf ormance characteri
15、st ics. I I I I Test I Symbol High level output i VOH vo 1 tage I I I I I I Low level output IVOL vo 1 tage l Input clamp voltage IvIK I High level input I IIH current I Low level input IIIL cur rent I High irnpedence output current 1 IOZH I- Short circuit Qutput current Quiescent power supply i ICC
16、Q current (CMOS I I inputs) Quiescent power supply I delta current (TTL inputs) 1 Icc See footnotes at end of table. I J Limits 1 Unit l I I Conditions IDevice IGroup A -55OC 5 TC 5 +125OC I type Isubgroups I I I Vcc = 5.0 V dc *IO% I I I Min I Max I unless otherw LIcc f 4.5 v, VIH - 2.0 v LIIL I 0.
17、8 V, vcc = 4.5 v, VIH - 2.0 v VIL f 0.8 V, ,e specified I I I I I I I I I I 1 I I I I I I I 1 I I I I III I I III IOH -300pA I All I I, 2, 3 I 4.3 I I V IOH = -15 mA I ALL I 1, 2, 3 I 2.4 I I IoL = 300 pA I ALL I 1, 2, 3 I I 0.21 V III I ,I I I l I I I II I I III I I III IoL = 32 mA I All I 1, 2, 3
18、I 1 .5; LIcc = 4.5 V, IIN = -18 mA i All 1 1, 2, 3 i i -1.21 V I l I I I I I I I I I I I III I I I I I I I III I I I I I I I I I I I III vcc = 5.5 v, VIN = 5.5 v I All I 1, 2, 3 I I 5.01 pA Jcc = 5.5 V, VIN = GND I All I 1, 2, 3 1 I -5.01 pA dcc = 5.5 v, VIN = 5.5 v I All I 1, 2, 3 I I 10 I /JA iCc
19、= 5.5 V, VIN = GND I ALL I I, 2, 3 I (-ia I PA iOUT - GND I I I ALL I 1, 2, 3 1 -75 I I mA =-5.5 I/ I I III III IIN f 0.2 V or VIN 2 5.3 V, I All I 1, 2, 3 I I 1.51 mA I I Icc - 5.5 V, fI = O MHz I I I I III I I III Icc = 5.5 v, VIN = 3.4 v 2/ I ALL I 1, 2, 3 I I 2-01 mA DEFENSE ELECTRONICS SUPPLY C
20、ENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9758 59 E 9979996 0011573 O I TABLE I. E lectri ca 1 performance characteri st i cs - continued. I I evice IGroup A type I subgroups Test ymbol Li
21、mits L Unit II - II II II L II Min I Max I I 0.251 mA/ I IHHz I 4.0 I Conditions Vcc = 5.0 V dc *IO% -55OC 5 TC 5 +125“C unless otherwise specified - Vcc =.5.5 V, OE = GND, One bit toggling 50% duty cycle, VIN 2 5.3 V or VIN 5 0.2 V, Outputs open, LE = Vcc 3/ I AL1 I 1, 2, 3 I l Iynamic power supply
22、 current CCD cc I I I I All I 1, 2, 3 Total power supply current vcc = 5.5 v, outputs open, f = 10 MHz, 56% duty cycle, se bit toggling, OE = GND, LE = Vcc 4/ V 5.3 v IN or VIN 5 0.2 v I I ALL I I 2i VIN 2 3.4 v or VIN = GND I I I 1 I I U I I I U I I I U I I All I 4 All I 4 All 7, 8 O1 I 9,10,11 03
23、01. I 9,10,11 03 O1 L9,10,11 03 O1 L 9,10,11 02 03 I See 4.3.1 Input capacitance IN OUT PLHI .PHLI Output capacitance See 4.3.1 Functional tests See 4.3.ld L II CL = 50 pF minimum RL = 50Q 5/ See figure 4 1.5 I lO.O ns 1.5 I 7.51 II Propagation delay time Dn to Yn, LE = High II 1.5 I 6.31 II 1.5 I 1
24、3.01 ns II Propagation delay time LE to Yn PLH2 tPHL2 1.5 i l0.5L 1.5 I 6.81 1.5 1 14.01 ns 1.5 I lO.OL 1.5 I 9.01 II II II II 1.5 II I 14.01 ns II II 1.5 1 11.01 1.5 I 10.01 Propagation delay time PRE to Yn tPLH3/ Propagation delay time CLR to Yn tPHL3 See footnotes at end of tab SIZE 5962-89758 ST
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