DLA SMD-5962-88653-1989 MICROCIRCUIT DIGITAL FAST CMOS BUFFER TRANSCEIVER MONOLITHIC SILICON《硅单片缓冲收发器高速互补型金属氧化物半导体数字微电路》.pdf
《DLA SMD-5962-88653-1989 MICROCIRCUIT DIGITAL FAST CMOS BUFFER TRANSCEIVER MONOLITHIC SILICON《硅单片缓冲收发器高速互补型金属氧化物半导体数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88653-1989 MICROCIRCUIT DIGITAL FAST CMOS BUFFER TRANSCEIVER MONOLITHIC SILICON《硅单片缓冲收发器高速互补型金属氧化物半导体数字微电路》.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、DESC-DWG-b53 59 E 7979775 0013625 O I LTR DATE (YR-MO-DA) APPROVED DESCRIPTION I I * U.S. OOVERNMINT PRINTING OFflCE: 1987 - 74 dislribulion Is unlimited. _-CI- _- _I Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 Scope. This drawing de
2、scribes device requirements for class B microcircuits in accordance vith 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant ion-JAN devices“. SIZE A STANDARDIZED 1.2 Part number. The complete part number shall be as shown in the following example: 5962-88653 5
3、962-88653 I I Draw1 ng number o1 T I Device type (1.2.1) R 1- I Case outline (1.2.2) X T I lead finish per MIL-M-3b510 1.2.1 Device types. The device types shall identify the circuit function as follows: Device type Generic number Circuit function o1 54FCT645 8-bit noninvertin9 buffer transceiver 02
4、 54FCT645A 8-bit noninverting buffer transceiver 1.2.2 Case outlines. The case outlines shall be as designated in appendix C of MIL-h-38510, and Out1 ine 1 etter is follows: Case outline R S 2 D-8 (20-leada 1,060“ x .310“ x .200“), dual-in-line package F-9 (20-leada .540“ x ,300“ x .loo“), flat pack
5、age c-2 (20-teminal, .358“ x .358“ x .loo“), square chip carrier package 1.3 Absolute maximum ratings. L/ Supply voltage range (except 1/0 pins) - - - - - - - Supply voltage range (I/O pins only) - - - - - - - Input voltage range- - - - - - - - - - - - - - - - - Output voltage range - - - - - - - -
6、- - - - - - - - DC input diode current (IIK) - - - - - - - - - - - - DC output diode current (10)- - - - - - - - - - - - Maximum power dissipation (PD) 2/- - - - - - - - - - Thermal resistance, junction-to-case (8JC) - - - - - Storage temperature range- - - - - - - - - - - - - - Junction temperature
7、 (TJ)- - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - DC output current- - - - - - - - - - - - - - - - - - 1.4 Recommended operating conditions. -0.5 V dC to t7.0 V dc -0.5 V dc to VCC + 0.5 V dc -0.5 V dc to VCC + 0.5 V dC -0.5 V dC to VCC + 0.5 V dC -20 mA -50 WA *l
8、o0 mA 500 mW See MIL-M-38540, appendix C -65C to +150 C +175 C +3OO0C Supply voltage range (VCC) - - - - - - - - - - - - - Maximum low levei input voltage (VIL)- - - - - - - - Minimum high level input voltage (VI 1 - - - - - - - Case operating temperature range Cj- - - - - - - - t4.5 V dc to t5.5 V
9、dc 0.8 V dc 2.0 V dc -55:C to +125*C -voltages referenced to GND. / liiust withstand the added PD due to short circuit test, e.g., 10s. DESC FORM 193A SEP a7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-F i SIZE A STANDARDIZED DESC-DWG-8653 57 II
10、7797775 0033627 4 E 5962-86653 2. APPLICABLE DOCUMENTS 2.1 Government specification and standard. Unless otherwise specified, the following ipecification and standard, of the issue listed in that issue of the Department of Defense Index of ipecifications and Standards specified in the solicitation,
11、form a part of this drawing to the !xtent specified herein. SPECIFICATION MILITARY MIL-M-38510 - Microcircuits, Leneral Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microel ectronics. (Copies of the specification and standard required by manufacturers in connect
12、ion with specific icquisition funcions should be obtained from the contracting activity or as directed by the :ontracting activity. ) .eferences cited herein, the text of this drawing shall take precedence. 2.2 Order of precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requireme
13、nts shall be in accordance with 1.2.1 of IIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ ind as specified herein. In the event of a conflict between the text of this drawing and the 3.2 Design, construction, and hysical dimensions. The design, const
14、ruction, and physical limensions shall be as specified !n MIL-M-38510 and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Case outlines. The case outlines shall be in accordanc
15、e with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified, the electrical ierformance characteristics are as specified in table I and apply over the full case operating :emperature range. 3.4 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein).
16、 The part shall In addition, the manufacturers part number le marked with the part number listed in 1.2 herein. iay also be marked as listed in 6.4 herein 3.5 Certificate of com liance. A certificate of compliance shall be required from a manufacturer n order to be listed as in approved source of su
17、pply in 6.4. The certificate of compliance ubmitted to DESC-ECS prior to listing as an approved source of supply shall state that the ianufacturers product meets the requirements of MIL-STO-883 (see 3.1 herein) and the requirements ierein. ierein) shall be provided with each lot of microcircuits del
18、ivered to this drawing. 3.6 Certificate of conformance. A certificate of conformance as required in MIL-STD-863 (see 3.1 I SHEET I I RMsoN LEVEL 7 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON. OHIO 45444 DESC FORM 193A SEP 87 ii U. 5. GOVOWMENT PRIMING OFFICE: lW-54BW Provided by IHSNot for ResaleNo rep
19、roduction or networking permitted without license from IHS-,-,-DESC-DWG-88653 57 I 7477775 0013628 b TABLE I. Electrical performance characteristics. I I I I subgroups I type 1-1 I I 1 I I Min I Max I I I unless otherwise specified 1 1 I I I vol tage IVIL = 0.8 Y, I I I I I I I (VIH = 2.0 v I I I II
20、OH = -12 mA I 1, 2, 3 I All 1 2.4 I IV I I I I I I I I vol tage VIL = 0.8 V, I I I I I I I IvIH = 2.0 v I I I IIOL = 48 mR I 1, 2, 3 I All I I 0.551 V I I 1 I I I I I I I I I. I I current (except I I I I I I I I/O pins) I I I I I I I current I I I I I I (U0 pins only) I I I I I I I current (except 1
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