DLA MIL-PRF-19500 680 A-2012 SEMICONDUCTOR DEVICE DIODE SILICON DUAL SCHOTTKY CENTER TAP POWER RECTIFIER SURFACE MOUNTED TYPE 1N6842U3 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/680A 17 October 2012 MIL-PRF-19500/680 7 September 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPE 1N6842U3, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departme

2、nts and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, dual Schottky power rectifier in a surface

3、 mount package. Four levels of product assurance are provided for each device types as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U3). 1.3 Maximum ratings. Type VRWMIO(1) TC= +100C IFSMTC= +25C Tp= 8.3 ms CJat 5 V TSTGTJ1N6842U3 V 60 A dc 10 A (pk) 200 pF 400 C -65 to +150 C

4、-65 to +150 (1) Derate linearly at 200 mA/C from TJ =TC =+100C to +150C. 1.4 Primary electrical characteristics. RJC= 2.8C/W maximum on each leg. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990

5、, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with

6、this revision shall be completed by 17 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/680A 2 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specifi

7、cation. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirement

8、s of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless ot

9、herwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies

10、 of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the

11、 event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3 REQUIREMENTS 3.1 General. The individual

12、item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (Q

13、ML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The requirements and physical dimensions shall be as specified in MIL-PRF-19500

14、 and on figure 1 (SMD.5) herein. The US government preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take preced

15、ence. * 3.4.1 Polarity and lead finish. Polarity and terminal configuration shall be in accordance with figure 1 herein. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition docum

16、ent (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical perfor

17、mance characteristics are as specified in 1.3, 1.4, and table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/680A 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASM

18、E Y14.5M, diameters are equivalent to x symbology. 4. Terminal 1 is common cathode. 5. Terminal 2 is anode 1. 6. Terminal 3 is anode 2. * FIGURE 1. Physical dimensions and configuration (SMD.5). Dimensions Ltr Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .108

19、 .124 2.74 3.15 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.76 U3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

20、S-,-,-MIL-PRF-19500/680A 4 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I and II herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that wi

21、ll affect life, serviceability, or appearance. 4 VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) * c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qual

22、ification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specificatio

23、n sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1 Group E inspection. Group E inspection shall be in a

24、ccordance with herein. * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Scree

25、n (see table E-IV of Measurement MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Method 3101 of MIL-STD-750 (see 4.3.2) Method 3101 of MIL-STD-750 (see 4.3.2) 9 and 10 Not applicable Not applicable 11 VF2and lR1VF2and lR112 Condition A, see 4.3.1, t = 240 hours Condition A, see 4.3.1, t = 4

26、8 hours 13 Subgroup 2 and 3 of table I herein; VF2= 50 mV, lR1= 100 percent of initial value or 25 A, whichever is greater. Subgroup 2 of table I herein; VF2= 50 mV, lR1= 100 percent of initial value or 25 A, whichever is greater. * (1) Shall be performed anytime after screen 3a. JANTX and JANTXV le

27、vels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. TJ= +125C minimum; VR= 80 percent of rated VRWMdc. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be perfor

28、med in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted w

29、ithout license from IHS-,-,-MIL-PRF-19500/680A 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein.

30、Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, an

31、d JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table II herein. * 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 40

32、66 IFSM= 200 A for each leg; one surge of 8.3 ms superimposed on IO. Condition A, TA= +25C; VR= 0; IO= 10 A continuous half-wave. B4 1037 Condition for intermittent operation life for each diode is as follows: IFor lO= 1 A (minimum); TJ= +85C, +15C, -5C for 2,000 cycles minimum. B5 1038 Condition fo

33、r steady-state operation life (accelerated) is as follows: Conditions B, Tj= +150C, TA+100C, 240 hrs. * B6 3101 Limit for thermal resistance is RJC= 2.80C/W for each side. * 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B2 4066 IFSM= 20

34、0 A for each leg; one surge of 8.3 ms superimposed on IO. Condition A, TA= +25C; VR= 0; IO= 10 A continuous half-wave. B3 1037 Condition for intermittent operation life for each diode is as follows: IFor IO= 1 A (minimum); TJ= 85C, +15C, -5C for 2,000 cycles minimum. B5 Not applicable. 4.4.3 Group C

35、 inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance

36、with table II herein. Subgroup Method Conditions * C5 3101 Limit for thermal resistance is RJC= 2.80C/W for each side. C6 1037 IFor IO= 1A (minimum). * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MI

37、L-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tab

38、les and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/680A 6 * TABLE I. Group A inspection. 1/ 2/ Inspection MIL

39、-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical inspection Subgroup 2 Thermal impedance Forward voltage Reverse current leakage 1N6842U3 2071 3101 4011 4016 See 4.3.2 IFM= 3 A (dc) pulsed (see 4.5.1) IFM= 10 A (dc) pulsed (see 4.5.1) IFM= 15 A (dc) pulsed (see

40、4.5.1) DC method, pulsed (see 4.5.1.) VR= 60 V dc ZJXVF1VF2VF3IR10.62 0.78 0.90 50 C/W V dc V dc V dc uA dc Subgroup 3 High temperature operation: Reverse current leakage 1N6842U3 Forward voltage 4016 4011 TA= +100C DC method, pulsed (see 4.5.1) VR= 60 V dc IF= 10 A pulsed (see 4.5.1) IF= 15 A pulse

41、d (see 4.5.1) IR2VF4VF510 0.70 0.80 mA dc V dc V dc Forward voltage 4011 TA= -55C Pulsed (see 4.5.1) IF= 10 A (dc) VF60.85 V dc Subgroup 4 Junction capacitance Subgroup 5 Insulation resistance Subgroup 6 and 7 Not applicable 4001 1016 VR= 5 V dc; f = 1 MHz, VSIG= 50 mV (p-p) (max) VR= 600 V dc; from

42、 lid to bottom case. All terminals shorted. CJIRES400 10 pF A 1/ For sampling plan, see MIL-PRF-19500. 2/ All measurements are for each side. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/680A 7 * TABLE II. Group B, C, and E, electr

43、ical end-point measurement 1/ 2/ 3/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011 IF= 10 A (pk) pulsed (see 4.5.1) VF250 mV 2. Reverse current leakage 4016 Pulsed (see 4.5.1) DC method VR= VRWMIR125 A or 100 percent of initial reading, whichever is

44、greater. 3. Thermal impedance 3101 See 4.3.2 ZJXC/W 1/ The electrical measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, steps 1 and 2. b. Subgroup 4, see table II herein, steps 1, 2, and 3. c. Subgroup5, see table II herein, steps 1, 2, and 3. *

45、 2/ The electrical measurements for table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1 and 2. b. Subgroup 3, see table II herein, steps 1, 2, and 3. 3/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgro

46、up 2, see table II herein, steps 1 and 2 for all levels. b. Subgroup 6, see table II herein, steps 1, 2 and 3 for all levels. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/680A 8 * TABLE III. Group E inspection (all quality levels)

47、for qualification only. Inspection MIL-STD-750 Qualification Method Conditions inspection Subgroup 1 Thermal shock (temperature cycling) Hermetic seal Electrical measurements 1051 1071 500 cycles. Condition G. See table I, subgroup 2, and table II, steps 1 and 2. 45 devices, c = 0 Subgroup 2 Steady-

48、state blocking life Electrical measurements 1038 t = 1,000 hours, TJ= +125C; VR= 80 percent of rated VRWM.See table I, subgroup 2, and table II, steps 1 and 2. 45 devices, c = 0 Subgroup 3 Not applicable Subgroup 4 Thermal impedance curves 3101 See MIL-PRF-19500. Sample size N/A Subgroup 5 Surge Ele

49、ctrical measurements 4066 Condition A, TA= +25C; IFSM= 200 A for each leg, one surge of 8.3 ms superimposed on IO. VR= 0; IO= 10 A half sine wave, continuous. See table I, subgroup 2, and table II, steps 1 and 2. 5 devices, c = 0 * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-