DLA MIL-PRF-19500 323 N-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON SWITCHING TYPES 2N3250A 2N3251A 2N3250AUB 2N3251AUB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXV .pdf

《DLA MIL-PRF-19500 323 N-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON SWITCHING TYPES 2N3250A 2N3251A 2N3250AUB 2N3251AUB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXV .pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 323 N-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON SWITCHING TYPES 2N3250A 2N3251A 2N3250AUB 2N3251AUB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXV .pdf（29页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/323N 24 May 2013 SUPERSEDING MIL-PRF-19500/323M 28 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, J

2、ANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Departm

3、ent of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for

4、 each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (sim

5、ilar to TO-18), figure 2 (UB), and figure 3 (die) herein. 1.3 Maximum ratings, unless otherwise specified, TC= + 25C. Type PT (1) TPCB= +25C PT (1) TC= +25C PT (1) TSP= +25C RJ(PCB)(2) RJC(2) RJSP(2) VCBOVCEOVEBOICTJand TSTG2N3250A 2N3251A 2N3250AUB 2N3251AUB mW 360 360 360 360 mW 360 360 N/A N/A mW

6、 N/A N/A 360 360 C/W 325 325 325 325 C/W 150 150 N/A N/A C/W N/A N/A 95 95 V dc 60 60 60 60 V dc 60 60 60 60 V dc 5.0 5.0 5.0 5.0 mA dc 200 200 200 200 C -65 to +200 (1) For derating, see figures 4, 5, and 6. (2) For thermal impedance curves, see figures 7, 8, and 9. AMSC N/A FSC 5961 INCH-POUND * C

7、omments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, Columbus, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information usi

8、ng the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/323N

9、 2 1.4 Primary electrical characteristics. Limits hFE1VCE= 1.0 V dc IC= 0.1 mA dc hFE3(1) VCE= 1.0 V dc IC= 10 mA dc hFE4(1) VCE= 1.0 V dc IC= 50 mA dc |hfe| f = 100 MHz VCE= 20 V dc; IC= 10 mA dc Min Max Min Max Min Max Min Max 2N3250A, AUB 2N3251A, AUB 40 80 50 150 100 300 15 30 2.5 9.0 3.0 9.0 Li

10、mits rbCCVCE= 20 V dcIC= 10 mA dc f = 31.8 MHz VCE(SAT)1IC= 10 mA dc IB= 1.0 mA dc CoboVCB= 10 V dc IE= 0 100 kHz f 1 MHz tonIC= 10 mA dc IB= 1.0 mA dc toffIC= 10 mA dc IB= 1.0 mA dc NFVCE= 5 V dc IC= .1 mA dc Rg = 1k 2N3250A, 2N3250AUB 2N3251A, 2N3251AUB f = 100 Hz Min Max ps 5 250 V dc 0.25 pF 6 n

11、s 70 ns 250 ns 300 dB 6 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional in

12、formation or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2

13、.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFIC

14、ATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document

15、Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in t

16、his document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/323N 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .1

17、95 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2.54 Q .040 1.02 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP

18、6 1, 2, 9, 11, 12 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, an

19、d Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure

20、 shown in figure 2. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of

21、 tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). TO-18 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PR

22、F-19500/323N 4 Symbol Dimensions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .

23、108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding con

24、nected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/323N 5 NOTES: 1. Chip size . 15

25、 x 19 mils 1 mil. 2. Chip thickness 10 1.5 mil. 3. Top metal . Aluminum 15,000 minimum, 18,000 nominal. 4. Back metal A. Gold 2,500 minimum, 3,000 nominal. B. Eutectic Mount No Gold. 5. Backside . Collector. 6. Bonding pad . B = 3 mils, E = 4 mils diameter. 7. Passivation . Si3N4(Silicon Nitride) 2

26、k min, 2.2 k nom. FIGURE 3. Physical dimensions, JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/323N 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as m

27、odified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols

28、, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IBEX- - - Base cutoff current (dc) with specified circuit between the collector and emitter. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be

29、 as specified in MIL-PRF-19500, and on figure 1 (TO-18), figure 2 (UB surface mount), and figure 3 (die) herein. No lead (Pb) shall be used in the construction of the die bonds. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choi

30、ce of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless othe

31、rwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I, 4.4.2, and 4.4.3 herein. 3.8 Marking. Devices shall be marked in accordance with

32、 MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N“ prefix and the “UB“ s

33、uffix can also be omitted. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in qu

34、ality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance in

35、spection (see 4.4, and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Grou

36、p E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not perform

37、ed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/323N 7 4.2.2.1 Group E thermal response. With extremely small junction d

38、evices such as this one, a true thermal impedance cannot be measure, only calculated. While “thermal response” has been substituted for “thermal impedance” herein, the terms, units and procedure as essentially unchanged. Each supplier shall submit a thermal response (ZJX) histogram of the entire qua

39、lification lot. The histogram data shall be taken prior to the removal of devices that are atypical for thermal response. Thermal response curves (from ZJXtest pulse time to RJXminimum steady-state time) of the best device in the qual lot and the worst device in the qual lot (that meets the supplier

40、 proposed screening limit), or from the thermal grouping, shall be submitted. The optimal test conditions and proposed initial thermal response screening limit shall be provided in the qualification report. Data indicating how the optimal test conditions were derived for ZJXshall also be submitted.

41、The proposed maximum thermal response ZJXscreening limit shall be submitted. The qualifying activity may approve a different ZJXlimit for conformance inspection end-point measurements as applicable. Equivalent data, procedures, or statistical process control plans may be used for part, or all, of th

42、e above requirements. The approved thermal response conditions and limit for ZJXshall be used by the supplier in screening and table I, subgroup 2. The approved thermal resistance conditions for RJXshall be used by the supplier for conformance inspection. For product families with similar thermal ch

43、aracteristics based on the same physical and thermal die, package, and construction combination (thermal grouping), the supplier may use the same thermal response curves 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as spec

44、ified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal response, method 3131 of MIL-STD-

45、750, see 4.3.3 Thermal response, method 3131 of MIL-STD-750, see 4.3.3 9 hFE3, ICBO2Not applicable 11 ICBO2; hFE3; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater, hFE3= 25 percent change from initial value ICBO2and hFE312 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I here

46、in; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 25 percent change from initial value Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 25 percent change from initial value * (1) Shall be performed anytime after t

47、emperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA= room ambient as defined in 4.5 of MIL-STD-750; VCB= 10 - 30 V dc (10 V dc for JANS); PT= 360 mW. NOTE: No heat sin

48、k or forced air-cooling on the devices shall be permitted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/323N 8 4.3.2 Screening JANC. Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor

49、Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.3 Thermal response. For very small junction devices such as this, the term thermal response shall be used in lieu of “thermal impedance” although measurements shall be performed the same wa