DLA MIL-M-38510 422A-1983 MICROCIRCUITS DIGITAL SCHOTTKY TTL CLOCK GENERATOR AND DRIVER MONOLITHIC SILICON.pdf
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1、MIL-M-385L0/422A 57 W 9777706 00611777 7 W -%5a-19 - I REQUIREMENTS I I REMOVED I MIL-M-38510/422A 9 August 1983 SUPtRStUINti MIL-M-38510/422(USAF) 27 November 1979 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, CLOCK GENERATOR AND DRIVER, MONOLITHIC SILICON I IINACTIVE FOR NEW DESIGN
2、AFTER DATE OF THIS REVISION I This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, Schottky TTL, clock generator/driver microcircuits. One product assurance
3、 class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. MIL-M-38510, except the JAN or “J“ certification mark shall not be used. 1.2 Part number. 1.2.1 Device type. The device type shaT1 be as follows: Device type Circuit Thellcomplete part
4、number shall be in accordance with o1 Clock generator/driver 1.2.2 Device class. The device class shall be the product assurance level as defined in MIL-M-38510. 1.2.3 Case outline. The case outline shall be designated as follows: Outline letter Case outline (see MIL-M-38510, appendix C) E D-2 (16-1
5、 ead, 1/4“ x 7/8“), dual -i n-1 i ne package 1.3 Absolute maximum ratings. Supply voltage range (VDDI - - - - - - - - - - Supply voltage range (Vcc) - - - - - - - - - - Input voltage range- - - - - - - - - - - - - - Storage temperature range- - - - - - - - - - - Maximum power dissipation, (PD) L/ -
6、- - - - - Lead temperature (soldering, 10 seconds) - - - Thermal resistance, junction-to-case (QJc) : Junction temperature (TJ)- - - - - - - - - - - Case E - - - - - - - - - - - I - - - - - - - -0.5 V dc to t13.5 V dc -0.5 V dc to t7.0 V dc -1.0 V dc to t7.0 V dc -65C to +15OoC 791 mW dc t3OO“C O. 0
7、3 C/W +175“C - l/ Must withstand the added PD due to short circuit test (e.g., 10s). Beneficial comments (recommendations, additions, deletions) and any perti- nent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-21, Griffiss AFB, NY 13441
8、, by using the self -addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.4 Recommended operating conditions. Supply voltage range
9、 (VDD) - - - - - - Supply voltage range (Vcc) - - - - - - Minimum high-level input voltage All other inputs - - - - - - - - - - Maximum low-level input voltage- - - - Case operating temperature range (TC)- Setup time, tSHL/LH msfN input- - - - - - - - - - - - RESIN to STSTB - - - - - - - - - - Hold
10、time, t“L/HL _I RESIN to STSTB - - - - - - - - - - 10.8 V dc minimum to 13.2 V dc maximum 4.5 V dc minimum to 5.5 V dc maximum 2.6 V dc 2.0 V dc -55C to +125C 50 ns -4 t 21 ns minimum 0.8 V dC - -P 21 ns minimum 4*- Oscillating frequency (fOSC) - - - - RESIN input hysteresis (HI - - - - - - 0.25 mV
11、minimum Positive-going threshol d voltage (VT+)- - - - - - - - - - - - 2.6 V maximum Negative-going threshold voltage (VT.)- - - - - - - - - - - - 0.8 V minimum Normalized fanout (maximum values) i/ Low leve1 - - - - - - - - - - - - - 40 I 10 I 10 4.3 MHz minimum to 18.43 MHz maximum i(TTL)OSC IRese
12、t, Ready I STSTB 10 I 1 Ill High level - - - - - - - - - - - - 2. APPLICABLE DOCUMENTS 2.1 Governmepecifications and standards. Unless otherwise specified, the following speci cations and standards, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards
13、specified in the solici- tation, form a part of this specification to the extent specified herein. SPECI F I CATION MILITARY MIL -M-38510 - Microcircuits, General Specification for. STANDARD M I L I TARY MIL -STD -883 - -Test Methods and Procedures for Microelectronics. (Copies of specifications, st
14、andards, handbooks, drawings, and pub1 ications required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting officer.) 2.2 Order of precedence. In the event of a conflict between the text of this specif
15、ication and the references cited herein, the text of this specification shall take precedence. 3. REQUIREMENTS 3.1 Detail specification. The individual item requirements shall be in accordance with MI-0 , and as specified herein. 3.2 Design, construction, and physical dimensions. The design, constru
16、ction, and physicalmensions shall be as speciffed in -510 and herein. 2/ tp = OSC. C. CL 3/ Fanout of 1 = 250 pA for low level, fanout of 1 = 100 KA for high level. C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-fl-38530/422A 59 W 9999906 0064
17、783 5 E MIL-M-38510/422A o *- a o TABLE I. Electrical performance characteristics. I I Test I Symbol I I I High level output vol tage, 181, $2 I I 10“ i I IHigh-level output voltage, IVOH2 I READY, RESET I I I f V03 IOSC, m, 82 (TTL) I I Hi gh-1 evel output vol tage, i i I Low-1 evel output vol tage
18、, 1 VOL 1 I81, $2, READY, I I RESET, STSTB 1 I I ILow-level output vol tage, I VOL2 182 (TTL), OSC I I I I I 1 Input cl amp vol tage I I I I I I I I I I IHigh-level input current IIIH I I I I i VIC ILow-level input current f IIL i i I Output short circuit 110s Icurrent, OSC, $2 (TTL), I I STSTB, REA
19、DY, RESET I I I I Supply current I Icc I I I 1 IDD I lnput capacitance ICIN I I I I I I I I I I I I 141 to 2 delay ItPLH4 I 182 to $1 delay /tPLH I I I 1l to 82 delay ItPLH5 I I TLH 161, 82 rise time Il, I 2 fall time I THL II31 pulse width tdl 182 pulse width I t82 I I Limits i/ I I Conditions L/ !
20、Min IMax IUnit I I I I I cc = 4.5 Y; I 9.0 I IV i VDD = 10.8 V; I I I I I I IOH = -100 PA I I I I I I VIL = GND VIH = 4.5 V I 3.3 I IV I I I I I I I I I ND I 2.4 I IV VDD = 10.8 Y, 4.5 VI I I I I I I I IOH = -1 mA I VDD = 10.8 V; VIH = 4.5 VI I I I I 10.45 I V I I cc = 4.5 V; VIL = GND I I I I IOL =
21、 2.5 mA I vcc = 5.5 v I I 10 I UA I VDD = 13.2 V I I I I VIL = 5.5 V I I I I VCC - 5.0 V I -10 I -70 I mA I VDD = 13.2 V I I I 1 I I I I II I I I I I 115 I mA I I I I I 2 ImA I 1 I I I pcc = 5.5 “ VDD = 13.2 V I I I Vcc = 5.0 Y; VDD = 12 V; I 8 IPF I VBIAS = 2.5 V; f = 1 MHz;I I I TC = +25C I I I I
22、I I I I I 2tp-201 I ns I -cL = 50 Pk I I II I IT I (see fig 5 for Ri) 13-45 i I ns I I I I I I IO I ns I I I I I 1 2tp-251 I ns I Ia- I I I 1% iJ i 2 FIGURE 2. Logic and timing diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-uillator functio
23、n The oscillator circuit derives its basic operating frequency from an external, series resonant, fundamental mode crystal. The two inputs, XTAL1 and XTAL2, provide the crystal connections. Crystal frequency is selected to be 9 times the associated processor operating frequency, or: Crystal frequenc
24、y = -9- tP Where tp = processor cycle time (period), trimning as indicated in the circuit. Crystals exceeding 10 MHz may require frequency The oscillator circuit may be operated with overtone made crystals. An external LC network must be added to the tank input as shown in the diagram to compensate
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