DIN ISO 24173-2013 Microbeam analysis - Guidelines for orientation measurement using electron backscatter diffraction (ISO 24713 2009)《微光束分析 使用电子背散射衍射进行定向测量的指南(ISO 24713-2009)》.pdf
《DIN ISO 24173-2013 Microbeam analysis - Guidelines for orientation measurement using electron backscatter diffraction (ISO 24713 2009)《微光束分析 使用电子背散射衍射进行定向测量的指南(ISO 24713-2009)》.pdf》由会员分享,可在线阅读,更多相关《DIN ISO 24173-2013 Microbeam analysis - Guidelines for orientation measurement using electron backscatter diffraction (ISO 24713 2009)《微光束分析 使用电子背散射衍射进行定向测量的指南(ISO 24713-2009)》.pdf(48页珍藏版)》请在麦多课文档分享上搜索。
1、April 2013 Translation by DIN-Sprachendienst.English price group 20No part of this translation may be reproduced without prior permission ofDIN Deutsches Institut fr Normung e. V., Berlin. Beuth Verlag GmbH, 10772 Berlin, Germany,has the exclusive right of sale for German Standards (DIN-Normen).ICS
2、71.040.50!*“7615959www.din.deDDIN ISO 24173Microbeam analysis Guidelines for orientation measurement using electron backscatterdiffraction (ISO 24713:2009),English translation of DIN ISO 24173:2013-04Mikrobereichsanalyse Leitfaden zur Messung der Orientierung mit Elektronenrckstreudiffraktometrie(IS
3、O 24173:2009),Englische bersetzung von DIN ISO 24173:2013-04Analyse par microfaisceaux Lignes directrices pour la mesure dorientation par diffraction dlectrons rtrodiffuss(ISO 24173:2009),Traduction anglaise de DIN ISO 24173:2013-04www.beuth.deDocument comprises pagesIn case of doubt, the German-lan
4、guage original shall be considered authoritative.4804.13DIN ISO 24173:2013-04 2 A comma is used as the decimal marker. Contents Page National foreword .4 National Annex NA (informative) Bibliography 4 Introduction .5 1 Scope 6 2 Normative references 6 3 Terms and definitions .6 4 Equipment for EBSD
5、12 5 Operating conditions . 13 5.1 Specimen preparation 13 5.2 Specimen alignment. 14 5.3 Common steps in collecting an EBSP . 14 5.3.1 Setting the microscope operating conditions . 14 5.3.2 Detector and working distances . 14 5.3.3 Camera integration/exposure time . 15 5.3.4 Binning 15 5.3.5 EBSP a
6、veraging 16 5.3.6 EBSP background correction/EBSP signal correction 16 5.3.7 Band detection 17 6 Calibrations required for indexing of EBSPs 18 7 Analytical procedure 21 7.1 Pre-test preparation . 21 7.2 Operating conditions . 22 7.3 Equipment stability check . 22 7.4 EBSD analysis 22 8 Measurement
7、uncertainty 22 8.1 General 22 8.2 Uncertainty of crystal orientation measurement 22 8.3 Absolute orientation. 23 8.4 Relative orientation 23 9 Reporting the results . 23 Annex A (informative) Principle of EBSD. 24 Annex B (normative) Specimen preparation for EBSD 25 B.1 General 25 B.2 Cutting . 25 B
8、.3 Mounting . 25 B.4 Grinding . 25 B.5 Polishing . 26 B.6 Etching 27 B.7 Ion beam techniques 28 B.8 Conductive coating 2230 DIN ISO 24173:2013-04 3 Annex C (informative) Brief introduction to crystallography and EBSP indexing, and other information useful for EBSD 31 C.1 General . 31 C.2 Symmetry .
9、31 C.3 The unit cell . 32 C.4 Crystal directions 32 C.5 Crystal planes 33 C.6 Crystal systems . 33 C.7 Laue groups . 34 C.8 Bravais lattices 35 C.9 Manual indexing of a cubic EBSP . 36 C.10 Examples of indexed cubic EBSPs . 37 C.11 Hexagonal indices . 38 C.12 Useful formulae and information . 40 C.1
10、2.1 Symbols . 40 C.12.2 Electron wavelength as a function of accelerating voltage 41 C.12.3 Interplanar spacing for plane (hkl) 41 C.12.4 Unit cell volume . 41 C.12.5 Angle between two planes (h1k1l1) and (h2k2l2) . 42 C.12.6 To find the zone uvw that is perpendicular to plane (hkl) . 42 C.12.7 Rela
11、tionships between zones and planes 42 C.12.8 Conditions for a Kikuchi band to be visible . 42 C.12.9 Cubic interzonal and interplanar angles . 44 C.12.10 Cristallographic information for selected cubic phases . 45 C.12.11 Cristallographic information for selected hexagonal, tetragonal and orthorhomb
12、ic phases . 45 C.12.12 Cubic coincidence site lattice (CSL) misorientation relationships . 46 Bibliography 47 DIN ISO 24173:2013-04 4 National foreword This document (ISO 24173:2009) has been prepared by Technical Committee ISO/TC 202 “Microbeam analysis” (Secretariat: SAC, China). The responsible G
13、erman body involved in its preparation was the Normenausschuss Materialprfung (Materials Testing Standards Committee), Working Committee NA 062-08-18 AA Elektronenmikroskopie und Mikrobereichsanalyse. Attention is drawn to the possibility that some of the elements of this document may be the subject
14、 of patent rights. DIN and/or DKE shall not be held responsible for identifying any or all such patent rights. In addition to the legal units of measurement, this standard also uses the unit “” (“ngstrm”). It should, however, be noted that the Gesetz ber Einheiten im Messwesen (German Law on units i
15、n metrology) prohibits the use of the unit “” for official and commercial purposes in Germany. The indication of this unit solely serves to facilitate the communication with those countries where this unit is used (import-export business). Conversion: 1 = 1010m = 107mm = 104m = 0,1 nm = 100 pm The D
16、IN Standards corresponding to the International Standards referred to in this document are as follows: ISO/IEC 17025 DIN EN ISO/IEC 17025 ISO/IEC Guide 98-3 DIN V ENV 13005 National Annex NA (informative) Bibliography DIN EN ISO/IEC 17025, General requirements for the competence of testing and calib
17、ration laboratories DIN V ENV 13005, Guide to the expression of uncertainty in measurement Introduction Electron backscatter diffraction (EBSD) is a technique that is used with a scanning electron microscope (SEM), a combined SEM-FIB (focussed-ion beam) microscope or an electron probe microanalyser
18、(EPMA) to measure and map local crystallography in crystalline specimens1,2. Electron backscatter patterns (EBSPs) are formed when a stationary electron beam strikes the surface of a steeply inclined specimen, which is usually tilted at 70 from normal to the electron beam. EBSPs are imaged via an EB
19、SD detector, which comprises a scintillator (such as a phosphor screen or a YAG single crystal) and a low-light-level camera (normally a charge-coupled device, CCD). Patterns are occasionally imaged directly on photographic film. By analysing the EBSPs, it is possible to measure the orientation of t
20、he crystal lattice and, in some cases, to identify also the phase of the small volume of crystal under the electron beam. EBSD is a surface diffraction effect where the signal arises from a depth of just a few tens of nanometres, so careful specimen preparation is essential for successful applicatio
21、n of the technique3. In a conventional SEM with a tungsten filament, a spatial resolution of about 0,25 m can be achieved; however, with a field-emission gun SEM (FEG-SEM), the resolution limit is 10 nm to 50 nm, although the value is strongly dependent on both the material being examined and on the
22、 instrument operating parameters. Orientation measurements in test specimens can be carried out with an accuracy of 0,5. By scanning the electron beam over a region of the specimen surface whilst simultaneously acquiring and analysing EBSPs, it is possible to produce maps that show the spatial varia
23、tion of orientation, phase, EBSP quality and other related measures. These data can be used for quantitative microstructural analysis to measure, for example, the average grain size (and in some cases the size distribution), the crystallographic texture (distribution of orientations) or the amount o
24、f boundaries with special characteristics (e.g. twin boundaries). EBSD can provide three-dimensional microstructural characterization by its use in combination with an accurate serial sectioning technique, such as focussed-ion beam milling4. It is strongly recommended that EBSD users be well acquain
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