EN 62132-4-2006 en Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz Part 4 Direct RF power injection method《集成电路 150kHz至1GHz电磁抗扰度的测量 第4部分 直接射频功率注入法 IE.pdf

《EN 62132-4-2006 en Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz Part 4 Direct RF power injection method《集成电路 150kHz至1GHz电磁抗扰度的测量 第4部分 直接射频功率注入法 IE.pdf》由会员分享，可在线阅读，更多相关《EN 62132-4-2006 en Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz Part 4 Direct RF power injection method《集成电路 150kHz至1GHz电磁抗扰度的测量 第4部分 直接射频功率注入法 IE.pdf（28页珍藏版）》请在麦多课文档分享上搜索。

1、BRITISH STANDARDBS EN62132-4:2006Integrated circuits Measurement of electromagnetic immunity 150 kHz to 1 GHz Part 4: Direct RF power injection methodThe European Standard EN 62132-4:2006 has the status of a British StandardICS 31.200g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g

2、51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g38g50g51g60g53g44g42g43g55g3g47g36g58BS EN 62132-4:2006This British Standard was published under the authority of the Standards Policy and Strategy Committee on 31 July 2006 BSI 2006ISBN 0 580 48891 8Nat

3、ional forewordThis British Standard is the official English language version of EN 62132-4:2006. It is identical with IEC 62132-4:2006.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represe

4、nted on this committee can be obtained on request to its secretary.Cross-referencesThe British Standards which implement international or European publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or

5、 by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immu

6、nity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpretation, or proposals for change, and keep UK interests informed; monitor related international and European developments and promulgate them in

7、the UK.Summary of pagesThis document comprises a front cover, an inside front cover, the EN title page, pages 2 to 25 and a back cover.The BSI copyright notice displayed in this document indicates when the document was last issued.Amendments issued since publicationAmd. No. Date CommentsEUROPEAN STA

8、NDARD EN 62132-4 NORME EUROPENNE EUROPISCHE NORM May 2006 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2006 CENELEC - All rig

9、hts of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62132-4:2006 E ICS 31.200 English version Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz Part 4: Direct RF power injection method (IEC 62132-4:2006) Circuits intgrs -

10、Mesure de limmunit lectromagntique 150 kHz 1 GHz Partie 4: Mthode dinjection directe de puissance RF (CEI 62132-4:2006) Integrierte Schaltungen - Messung der elektromagnetischen Strfestigkeit im Frequenzbereich von 150 kHz bis 1 GHz Teil 4: Verfahren direkter Einspeisung der HF-Leistung (IEC 62132-4

11、:2006) This European Standard was approved by CENELEC on 2006-02-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliogra

12、phical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of

13、 a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Ice

14、land, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. Foreword The text of document 47A/733/FDIS, future edition 1 of IEC 62132-4, prepared by SC 47A, Integrated circuits,

15、 of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 62132-4 on 2006-02-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by end

16、orsement (dop) 2006-12-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2009-02-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 62132-4:2006 was approved by CENELEC as a European Standard without

17、any modification. _ EN 62132-4:2006 2 3 CONTENTS 1 Scope 5 2 Normative references .5 3 Terms and definitions .5 4 General6 4.1 Measurement basics6 4.2 Single pin direct power injection 8 4.3 Multiple pin direct power injection into pins of differential mode systems 9 5 Test conditions.9 6 Test equip

18、ment 9 6.1 General.9 6.2 RF power source .10 6.3 RF power meter and directional coupler.10 7 Test set-up.10 7.1 General.10 7.2 Power injection set-up .10 7.3 Test circuit board 11 7.4 Characteristics of the power injection set-up 12 7.5 Decoupling networks .12 8 Test procedure.13 8.1 General.13 8.2

19、Specific test procedure 13 9 Test report .14 Annex A (informative) Example of a specification of immunity levels e.g. for automotive applications 15 Annex B (informative) Hints for the best installation of a test set-up with respect to RF.17 Annex C (informative) Constant peak test level explanation

20、23 Annex ZA (normative) Normative references to international publications with their corresponding European publications .25 Bibliography .24 Figure 1 Arrangement of a direct injection test set-up.7 Figure 2 Illustration of the principle of the single pin power injection.8 Figure 3 Illustration of

21、the principle of multiple pin power injection9 Figure 4 Example of the routing from the injection port to a pin of the DUT .11 Figure 5 Example of a S21magnitude measurement result (first resonance above 1 GHz) 12 Figure 6 Flowchart of a test procedure .14 EN 62132-4:2006 4 Figure B.1 Installation o

22、f a connector on the test board nearby the DUT .18Figure B.2 Using a shielding box placing the connector as close as possible to the DUT (optional series resistor may be added).18 Figure B.3 Accessing a high pin count DUT by a large main board and an IC specific board connected by spring contact pin

23、s 19 Figure B.4 DC decoupling of a high current pin 19 Figure B.5 Test set-up with mandatory blocking capacitor 20 Figure B.6 Layout example for DUT with mandatory blocking capacitor.20 Figure B.7 Test set-up example with the load on the test set-up .21 Figure B.8 Example of a decoupling network for

24、 an input with high impedance .21 Figure B.9 Termination of pins not to be tested with a typical impedance to reproduce crosstalk currents.22 Figure B.10 Example of power injection into two pins using the mandatory termination of the high speed CAN bus .22 Table 1 System and IC parameters affecting

25、immunity8 Table A.1 Example of immunity level ranges 15 EN 62132-4:2006 5 INTEGRATED CIRCUITS MEASUREMENT OF ELECTROMAGNETIC IMMUNITY 150 kHz TO 1 GHz Part 4: Direct RF power injection method 1 Scope This part of IEC 62132 describes a method to measure the immunity of integrated circuits (IC) in the

26、 presence of conducted RF disturbances, e.g. resulting from radiated RF disturbances. This method guarantees a high degree of repeatability and correlation of immunity measurements. This standard establishes a common base for the evaluation of semiconductor devices used in equipment functioning in a

27、n environment subject to unwanted radio frequency electromagnetic waves. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the reference

28、d document (including any amendments) applies. IEC 61967-4, Integrated circuits Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 4: Measurement of conducted emissions 1 / 150 direct coupling method IEC 62132-1:2006, Integrated circuits Measurement of electromagnetic immunity, 150 kHz

29、to 1 GHz Part 1: General conditions and definitions IEC 61000-4-6, Electromagnetic compatibility (EMC) Part 4-6: Testing and measurement techniques Immunity to conducted disturbances, induced by radio-frequency fields CISPR 16-1-2:2003, Specification for radio disturbance and immunity measuring appa

30、ratus and methods Part 1-2: Radio disturbance and immunity measuring apparatus. Ancillary equipment. Conducted disturbances 3 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 62132-1 apply. EN 62132-4:2006 6 4 General 4.1 Measurement basics The minimum

31、electromagnetic immunity level required for an IC depends on the maximum permitted level of RF disturbance to which an electronic system can be submitted. The value of the immunity level is dependent on system and application specific parameters. To determine the immunity performance of an IC, a sim

32、ple measurement procedure, and a measurement set-up in which resonances are avoided, is required to guarantee a high degree of repeatability. The following points out the base of this test. The largest geometry found in an integrated circuit is the leadframe. The size of the leadframe is in the rang

33、e of some centimetres or smaller. The dimensions of the structures on chip are even up to two magnitudes smaller than the dimension of the leadframe. For a frequency range below 1 GHz, this leadframe, as well as the structures on-chip, are not regarded as efficient antennas for the reception of unwa

34、nted RF energy. It is the cable harness and/or the traces of a printed circuit board which constitute efficient antennas. Thus, an IC receives the unwanted RF energy through the pins connected to the wires of such cables. Because of this, the electromagnetic immunity of an IC can be characterized by

35、 conducted RF disturbances (i.e. RF forward power) instead of field parameters as is usually the case in module and/or system testing. For module and system tests, the forward power provided to a circuit by the cable harness or the traces on a printed circuit board (PCB) acting as antennas can be me

36、asured or estimated. This power is considered to be a forward power delivered to the circuit, no matter whether it will be reflected or absorbed. In fact it has been observed that many ICs are most susceptible to the disturbances at quite high reflections. This is due to the fact that in this case e

37、ither injected RF currents or applied RF voltages reach the highest possible values. To characterize the immunity of an IC, the forward power needed to cause malfunction is measured. The malfunction may be classified from A to D according to the performance classes defined in IEC 62132-1. Figure 1 s

38、hows the principal test hardware configuration with optional automatic control by the PC. EN 62132-4:2006 7 BUS RF generator RF amplifier DC supply or signal generator RF Powermeters Directionalcoupler PforDecoupling network DCBlock50 coax DUT Optional: control PCDUT monitor RF injectionport TestPCB

39、PreflIEC 2649/05 Key Pforforward power Prefl reflected power Figure 1 Arrangement of a direct injection test set-up The frequency variable RF generator provides the RF disturbance that is amplified by the connected RF amplifier. The directional coupler and the RF power meters are used to measure the

40、 actual forward power injected into the device under test (DUT). At the RF injection port the RF power is delivered to the test printed circuit board (PCB). The RF amplifier is decoupled by a DC block to avoid supplying DC into the amplifier output. The DC supply is prevented from getting RF power b

41、y a decoupling network that has a high RF impedance on the side that is connected to the RF injection path. To monitor the behaviour of the DUT an oscilloscope, or other monitoring device preferably with a pass/fail function etc., can be used. To decouple the RF signal crosstalk of the DUT from the

42、low frequency measurement performed by the oscilloscope, a second decoupling network is used. The measurement equipment can be optionally controlled by a computer, if desired. Any function inside an IC can be affected even if it is not connected to the pin under test. Therefore the operation mode(s)

43、 of the IC shall be chosen in a way that all functions of the IC are used during the test. ICs are often used in different configurations based on the application. In order to understand the influence of each individual pin, each pin that is expected to be exposed to RF disturbance should be tested

44、individually. Multiple pin testing is permissible into pins of differential mode systems. EN 62132-4:2006 8 The forward power needed to cause malfunction of an IC depends on several parameters, like those shown in Table 1. Table 1 System and IC parameters affecting immunity IC related parameters Mod

45、ule related parameters Circuit design Protection of the pin by external components Chip layout Operation mode of the IC Ground/supply distribution system inside the IC Ground system Pinning assignment and bond wire design Board layout Package Impedance of wiring harness and load Process technology C

46、ircuitry connected to a pin Knowledge of the immunity of an IC (the highest forward power that does not affect the function of the IC) allows the user to decide if he needs external protection means and how much effort has to be spent for external protection. 4.2 Single pin direct power injection Fo

47、r highest test selectivity, the RF power injected at the RF injection port is directly applied to a single pin of an IC (see Figure 2). A capacitor may be used as a DC block, while a resistor may be used for current limitation. By default, the capacitor value can be chosen as 6,8 nF, as specified in

48、 IEC 61967-4. The resistor value can be, by default, 0 . Other values up to 100 can be chosen if functionally required. Chosen R and C values shall be stated in the test report. NOTE When the series resistor is 0 , each input or output of the DUT will be loaded by the 50 of the RF power injection sy

49、stem. DUTRF-injectionport C RRF powerTest PCBIEC 2650/05 Figure 2 Illustration of the principle of the single pin power injection EN 62132-4:2006 9 4.3 Multiple pin direct power injection into pins of differential mode systems If two or more pins are used to transfer information as differential mode signal in analogue or digital form, then multiple pin direct RF power injection can be used to test the common mode immunity of such analogue or digit