DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR TTL MONOSTABLE MULTIVIBRATOR MONOLITHIC SILICON《单稳多谐振荡器晶体管硅单片电路数字双极微电路》.pdf

《DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR TTL MONOSTABLE MULTIVIBRATOR MONOLITHIC SILICON《单稳多谐振荡器晶体管硅单片电路数字双极微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR TTL MONOSTABLE MULTIVIBRATOR MONOLITHIC SILICON《单稳多谐振荡器晶体管硅单片电路数字双极微电路》.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to current requirements. Editorial changes throughout. - gap 06-10-05 Raymond Monnin REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Tuan Nguyen DEFENSE SUPPLY CENTER COLU

2、MBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Larry Shaw COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, MONOSTABLE MULTIVIBRATOR, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING A

3、PPROVAL DATE 97-05-30 MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-97553 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E542-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97553 DEFE

4、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines

5、and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97553 01 Q C X Federal stock class designator RHA d

6、esignator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA desi

7、gnator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number C

8、ircuit function 01 54121 monostable multivibrator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant

9、, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP

10、1-T14 or CDIP2-T14 14 dual-in-line D GDFP1-F14 or CDFP2-F14 14 flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

11、e from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) +7.0 V dc Input voltage (VIN) +5.5 V dc Operating free air temperature range -5

12、5 C to +125 C Maximum power dissipation (PD) . 550 mW Storage temperature range -65 C to +150 C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175 C 1.4 Recommended operating conditions. Supply voltage range (VCC) 4.5 V dc to 5.5 V dc High-level output curren

13、t (IOH) -0.4 mA max Low-level output current (IOL) . 16 mA max Rate of rise or fall of input pulse (dv/dt) 2/ Schmitt input, B 1 V/s Logic inputs, A1, A2 1 V/s Input pulse width (tw(in) . 50 ns min External timing capacitance (Rext) . 1.4 k to 30 k 2/ External timing capacitance (Cext) . 1000 F 2/ D

14、uty cycle RT= 2 k 67% RT= MAX Rext90% Case operating temperature range (TC) . -55 C to +125 C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless other

15、wise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-

16、1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.

17、daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this do

18、cument, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ This parame

19、ter is not production tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1

20、Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as des

21、cribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifi

22、ed in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tab

23、le. The truth table shall be as specified on figure 2. 3.2.3 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the elect

24、rical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for

25、 each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of

26、not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/comp

27、liance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance

28、shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 her

29、ein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38

30、535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change f

31、or device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiri

32、ng activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall

33、be in microcircuit group number 3 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC

34、FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test Conditions -55 C TC +125C Group A subgroups Limits 1/ Unit unless otherwise specified Min Max High-level input voltage at A input VIHVCC = 4.5 V 1, 2, 3 2 V Low-level input voltage at A input VILVCC = 4.5 V 1, 2, 3 0.

35、8 V Positive-going threshold voltage at B input VT+VCC = 4.5 V 2 V Input clamp voltage VIKVCC = 4.5 V, II= -12 mA 1, 2, 3 -1.5 V High level output voltage VOHVCC = 4.5 V, IOH= -0.4 mA 1, 2, 3 2.4 V Low-level output voltage VOLVCC = 4.5 V, IOL= 16 mA 1, 2, 3 0.4 V Input current at maximum input volta

36、ge IIVCC = 5.5 V, VI= 5.5 V 1, 2, 3 1 mA High-level input current IIHVCC = 5.5 V, VI= 2.4 V A1 or A2 1, 2, 3 40 A B 1, 2, 3 80 Low-level input current IILVCC = 5.5 V, VI= 0.4 V A1 or A2 1, 2, 3 -1.6 mA B 1, 2, 3 -3.2 Short-circuit output current IOS 2/ VCC = 5.5 V 1, 2, 3 -20 -55 mA Supply current I

37、CCVCC = 5.5 V Quiescent 1, 2, 3 25 mA Triggered 3/ 1, 2, 3 40 mA Functional test VIN = VIHmin or VIL max, Verify output VO, See 4.4.1b 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S

38、IZE A 5962-97553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55 C TC +125C Group A subgroups Limits 1/ Unit unless otherwise specified Min Max Propagation delay time,

39、low-to-high level Q output from either A input tPLHSee figure 3 CL= 15 pF, RL= 400 Cext= 80 pF Rintto VCC9 70 ns Propagation delay time, low-to-high level Q output from B input tPLH9 55 ns Propagation delay time, high- to-low level Q output from either A input tPHL9 80 ns Propagation delay time, hig

40、h-to-low level Q output from B input tPHL9 65 ns Pulse width obtained using internal timing resistor tw(out)Cext= 80 pF, Rintto VCC9 70 150 ns Pulse width obtained with zero timing capacitance tw(out)Cext= 0, Rintto VCC9 50 ns Pulse width obtained using external timing resistor tw(out) Cext= 100 pF,

41、 RT= 10 k 9 600 800 ns Cext= 1 F, RT= 10 k 3/ 9 6 8 ms 1/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and the direction of current flow, respectively, and the absolute value of the magnitude, not the sign, is relative to the

42、minimum and maximum limits, as applicable, listed herein. 2/ Not more than one output should be shorted at a time. 3/ This parameter is not production tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9

43、7553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines C, D Terminal number Terminal symbol 1 Q 2 NC 3 A1 4 A2 5 B 6 Q 7 GND 8 NC 9 RINT10 CEXT11 REXT/ CEXT12 NC 13 NC 14 VCCFIGURE 1. Terminal connections. INPUTS OUTP

44、UTS A1 A2 B Q Q L X H L H X L H L H X X L L H H H X L H H H H H H L X X L FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

45、REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. CLincludes probe and jig capacitance. CL = 15 pF, RL= 400 . 2. All diodes are 1N3064 or equivalent. FIGURE 3. Test circuit and switching waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

46、-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-3

47、8535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening.

48、For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-88