DLA SMD-5962-79011 REV E-1994 MICROCIRCUIT DIGITAL CMOS DUAL D FLIP-FLOP MONOLITHIC SILICON《硅单片双重D型双稳态多谐振荡器触发器》.pdf
《DLA SMD-5962-79011 REV E-1994 MICROCIRCUIT DIGITAL CMOS DUAL D FLIP-FLOP MONOLITHIC SILICON《硅单片双重D型双稳态多谐振荡器触发器》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-79011 REV E-1994 MICROCIRCUIT DIGITAL CMOS DUAL D FLIP-FLOP MONOLITHIC SILICON《硅单片双重D型双稳态多谐振荡器触发器》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、I Addition of MIL spec replacement nunkrs plus part nrnkr corrections, editorial changes Added 1 vendor, FSCM 27014 Removed 1 vendor; FSCM 27014 for device 02. Inactivate device 01, case C only fc -cy design. Rwved 1 vendor; FSCM 31019 for device 01, Ca. -d. t- 82-08- 11 N.A. Hawk 83- 09- 05 N.A. Ha
2、uck 85-01 -04 N.A. Hauck I o Convert to approved source formt 82-06-04 I N.A. Hauck Technical and editorial changes throughout. Changed to SWD formt. Added device typc 03. 94 - 02- 1 7 M. L. Poelking I #FBGE ELECiFUlICS SFFLY CENTW PREPARED BY - t)4yTcN, CHIO 45444 A.J. Foley RullC N/A STAEa4Rf“ I C
3、HECKEDBY C.R. J.ok8on - _ - _ -_JlLtiu MILITARY APPROVED BY N.A. tisuck DRcwINf THIS DRAYING IS AVAILABLE FOR USE BY ALL DEPARTMENTS MIAWING APROVAL DATE AND AGENCIES OF THE DEPARTMENT OF DEFENSE 7946-1 4 RMCION LEVEL E I AMCC NIA MICROCIRCUIT, DIGITAL, CMOS DUAL D FLIP-FLOP MONOLITHIC SILICON A I 7
4、9011 I I DESC FORM 193-1 5962-626-93 JUL 91 DISTRIBUTION STATEMENT A. Approved for public release; distribution is vilimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-79011 REV E 999999b 0058473 348 STANDARD1 ZED SIZE MILITARY DRAWING
5、 A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 Fm/lSIOVLML 1. SCOPE 1.1 Scope. This drawing describes device rcquirmts for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the we of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part or Identif
6、ying Nunber (PIN. o1 The complete PIN shall be as shorn in the following exanple: X - C - 79011 - I I I I 79011 9-EE-r I I l I ii7z&G FzsG Lead finish per (see 1.2.1) (see 1.2.2) MIL-M-38510 1.2.1 Device twe(s1. The device type(s) shall identify the circuit function as follows: Device tm Gcmric nunb
7、er Circuit function o1 02 03 40138 Dual D type flip-flop 40138 Dual D type flip-flop 140138 Dual D type flip-flop 1.2.2 Case outline(s1. lhe case outline shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desiqnator Terminals Package style C CDIP2-Tl4 or GDIP1-T14 D CD
8、FPZ-F14 or GDFP-Fi4 14 Dual-in-line package 14 f Lat-package 1.2.3 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter “X“ shall not be marked on thmicrocircuit or its packaging. finishes A, 6, and Care considered acceptable and interchangeable without p
9、reference The llXal designation is for use in specifications when lead 1.3 Absolute maximm ratings. Supply voltage range (V,) - - - - - - - - - - - -0.5 V dc to +18 V dc Input voltage range - - - - - - - - - - - - - - Storage temperature range- - - - - - - - - - - - Maximm power dissipation per devi
10、ce (P,) I/ - - 500 Ru z/ Lead temperature (soldering 10 seconds)- - - - - +3OO0C Thermal resistance, junction to case (OJc) - - - -0.5 v dc to v, +0.5 v dc -65C to +150C See MIL-STD-1835 Junction temperature (TJ)- - - - - - - - - - - - +175“C 1.4 Recomnended operatinq conditions. Supply voltage - -
11、. - - - - - - - - - - - - +3.0 V dc to +15 V dc Case operating tenperature range - - - - - - - - -55C to +125“C L/ Must withstand the added Po due to short circuit test, e.&!., I,. z/ For 1,: = +lOO“C to +125“C, derate linearly at 12 W/OC to 200 Ry. Provided by IHSNot for ResaleNo reproduction or ne
12、tworking permitted without license from IHS-,-,-SMD-59b2-790LL REV E 999999b 0058472 284 I I STANDARD1 ZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 WiSICNLML E 2. APPLICABLE DOCUMENTS 2.1 Goverment specifications. standards and bulletin. Unless otherwise specified
13、, the following specifications standards, and bulletin of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this specification to the extent specified herein. 79011 SEET 3 SPECIFICATION MI LI TARY MIL-1-385
14、35 STANDARD - Integrated Circuits (Microcircuits) Manufacturing, General Specification for MI LI TARY MI L -STD-883 - Test Methods and Procedures for Microelectronics. MXL-STD-1835 - Microcircuit Case Outlines. BULLETIN MIL I TARY MIL-BUL-103 - List of Standardized Military Drawing (sliw)s). (Copies
15、 of specifications, standards, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of Drecedence. In the event of a conflict between the text of this drawing a
16、nd the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as speci
17、fied herein Product built to this drawing that is produced by a Pualified Manufacturer Listing (ML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-1-38535 may be processed as PML product in accordance with the manufacturers approved prog
18、ram plan and qualifying activity approval in accordance with MIL-1-38535. requirements herein. shall not affect the PIN as described herein. A iiQii or oMLoa certification mark in accordance with MIL-1-38535 is required to identify when the WL flou option is used. This QIIL flow as docunented in the
19、 Quality Management (W) plan may make modifications to the These modifications shall not affect form, fit, or function of the device. These modifications 3.2 Desiqn, construction. and dwsical dimensions. The design, construction, and physical dimensions shall be as specified nn MIL-STD-883(see 3.1 h
20、erein) and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s1. The truth table(s) shall be as specified on figure 2. 3.3 Lead material and finish. Th
21、e lead material and finish shall be in accordance with MIL-U-38510. 3.4 Electrical wrformance characteristics. Unless otherwise specified herein, the electrical performance 3.5 Electrical test requirements. lhe electrical test requirements shall be the subgroups specified in table II. characteristic
22、s are as specified in table I and apply over the full case operating tenperature range. The electrical tests for each subgroup are described in table I. 3.6 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be marked as listed in M
23、IL-BUL-103 (see 6.6 The part shall be marked with the PIN listed in 1.2 herein. herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-790LL REV E 7799996 0058473 110 Condi ti ons -55C S 1,- S 125C Test Device Group A Limits type subsrows
24、Min I Max Units High-level output vol tage V, = 5 V, V, = O V or V, v, = 10 v v, = 15 v Low-level output vol tage Al 1 I1,2,3 I I 0.05 IV I I I I 0.05 I I 0.05 I High-level input voltage V, = O V or 15.0 V See 4.4.ld Lou-level input vol tage I Al 1 1, 2, 3 tl .o fi Ali 7,8 Input capacitance Puiescen
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