DLA SMD-5962-95693 REV E-2010 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS MULTIPLEXER DEMULTIPLEXER WITH ACTIVE OVERVOLTAGE PROTECTION MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R001-99 98-10-8 R. Monnin B Change conditions for input leakage current an overvoltage leakage current in table I. Editorial changes throughout. - lgt 99-02-24 R. Monnin C Make change to descriptive designator

2、as specified in 1.2.4. - ro 99-04-28 R. Monnin D Make changes to access time and enable delay waveforms as specified under figure 3. - ro 00-07-19 R. Monnin E Redraw. Update drawing to current requirements. - drw 10-11-09 Charles F. SaffleTHE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED REV

3、 SHET REV E E E E E E E E E E SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandra Rooney DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS D

4、RAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RADIATION HARDENED CMOS, MULTIPLEXER/DEMULTIPLEXER WITH ACTIVE OVERVOLTAGE PROTECTION, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-02-27

5、 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-95693 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E023-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95693 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3

6、990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected

7、 in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 95693 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Devic

8、e class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the

9、MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 HS546RH Radiation hardened DI single

10、 16-channel MUX/DEMUX with active overvoltage protection 02 HS547RH Radiation hardened DI differential 8-channel MUX/DEMUX with active overvoltage protection 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class

11、 Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated

12、 in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for R

13、esaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95693 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage between +V and -V . +44 V Supply vo

14、ltage between +V and ground . +22 V Supply voltage between -V and ground . -25 V Digital input overvoltage +VEN, +VA. +VSUPPLY+ 4 V -VEN, -VA. -VSUPPLY 4 V Analog input overvoltage +VS. +VSUPPLY+ 20 V -VS-VSUPPLY 20 V Continuous current, S or D (pulsed at 1 ms, 10 percent duty cycle max) 40 mA Stora

15、ge temperature range -65C to +150C Maximum power dissipation at TA= 125C (PD) . 1 W 2/ Thermal resistance, junction-to-case (JC) 18C/W Thermal resistance, junction-to-ambient (JA) 50C/W Lead temperature (soldering, 10 seconds) . +275C Junction temperature (TJ) . +175C 1.4 Recommended operating condi

16、tions. Operating supply voltage (VSUPPLY) . 15 V Analog input voltage (VS) VSUPPLYLogic low level (VAL) . 0 V to +0.8 V Logic high level (VAH) +4 V to +VSUPPLYMax RMS current, S or D . 8 mA Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available

17、(dose rate = 50 300 rads (Si)/s) . 10 Krads (Si) Dose rate upset (20 ns pulse) . 3/ Dose rate burnout . 3/ Dose rate latch-up 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the ex

18、tent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Meth

19、od Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power excee

20、ds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the rate of 20 mW/C for case outline X. 3/ Values to be specified when testing is completed. 4/ Devices use dielectrically isolated (DI) technology and latch-up is not physically possible. Pro

21、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95693 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standar

22、d Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence.

23、In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements.

24、The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The

25、individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical d

26、imensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connec

27、tions. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiati

28、on parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sh

29、all be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not f

30、easible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be i

31、n accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of

32、 compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be

33、listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirem

34、ents of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided

35、with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95693 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 T

36、ABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C -V = -15 V, +V = +15 V VREF= OPEN, VEN= 4.0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input leakage current 1/ IIHMeasure inputs sequentially, connect all unused inputs to GND 1,

37、2, 3 01, 02 -1.0 1.0 A IIL-1.0 1.0 IIH, IILM, D 2/ 1 -1.0 1.0 Leakage current into the source terminal of an “OFF” switch +IS(OFF)VS= +10 V, VEN= 0.8 V, All unused inputs = -10V, VD= -10 V 1 01, 02 -10 +10 nA 2, 3 -50 +50 VEN= 0.5 V, M, D 2/ 1 -50 +50 -IS(OFF)VS= -10 V, VEN= 0.8 V, All unused inputs

38、 = +10V, VD= +10 V 1 01, 02 -10 +10 2, 3 -50 +50 VEN= 0.5 V, M, D 2/ 1 -50 +50 Leakage current into the drain terminal of an “OFF” switch +ID(OFF)VD= +10 V, VEN= 0.8 V, All unused inputs = -10 V 1 01, 02 -10 +10 nA 2, 3 01 -300 +300 02 -200 +200 VEN= 0.5 V M, D 2/ 1 01 -300 +300 02 -200 +200 -ID(OFF

39、)VD= -10 V, VEN= 0.8 V, All unused inputs = +10 V 1 01, 02 -10 +10 nA 2, 3 01 -300 +300 02 -200 +200 VEN= 0.5 V M, D 2/ 1 01 -300 +300 02 -200 +200 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D

40、RAWING SIZE A 5962-95693 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TA+125C -V = -15 V, +V = +15 V VREF= OPEN, VEN= 4.0 V Group A subgroups Device type Limits

41、Unit unless otherwise specified Min Max Leakage current from an “ON” driver into the switch (drain) +ID(ON)VD= +10 V, VS= +10 V, All unused inputs = -10 V 1 01, 02 -10 +10 nA 2, 3 01 -300 +300 02 -200 +200 VEN= 4.5 V M, D 2/ 1 01 -300 +300 02 -200 +200 -ID(ON)VD= -10 V, VS= -10 V, All unused inputs

42、= +10 V 1 01, 02 -10 +10 nA 2, 3 01 -300 +300 02 -200 +200 VEN= 4.5 V M, D 2/ 1 01 -300 +300 02 -200 +200 Overvoltage protected leakage current into the drain terminal of an “OFF” switch +ID(OFF)OVER VOLTAGEVS= 33 V, VD= 0 V, VEN= 0.8 V 1, 2, 3 01, 02 -2 +2 A VEN= 0.5 V M, D 2/ 1 -5 +5 -ID(OFF) OVER

43、 VOLTAGEVS= -33 V, VD= 0 V, VEN= 0.8 V 1, 2, 3 -2 +2 VEN= 0.5 V M, D 2/ 1 -5 +5 Positive supply current +I VA= 0 V 1, 2, 3 01, 02 2.0 mA VEN= 4.5 V M, D 2/ 1 2.0 Negative supply current -I VA= 0 V 1, 2, 3 01, 02 -1.0 mA VEN= 4.5 V M, D 2/ 1 -1.0 See footnotes at end of table. Provided by IHSNot for

44、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95693 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Condition

45、s -55C TA+125C -V = -15 V, +V = +15 V VREF= OPEN, VEN= 4.0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Standby positive supply current +ISBYVA=0 V, VEN= 0 V 1, 2, 3 01, 02 2.0 mA M, D 2/ 1 2.0 Standby negative supply current -ISBYVA=0 V, VEN= 0 V 1, 2, 3 01, 02 -1.

46、0 mA M, D 2/ 1 -1.0 Switch “ON” resistance +RDS1VS= 10 V, ID= -100 A 1 01, 02 1500 2, 3 1800 VEN= 4.5 V M, D 2/ 1 1800 -RDS1VS= -10 V, ID= +100 A 1 01, 02 1500 2, 3 1800 VEN= 4.5 V M, D 2/ 1 1800 Difference in switch “ON” resistance between channels +RDS1(+RDS1MAX) (+RDS1MIN) x 100) +RDS1AVE 1 01, 0

47、2 7 % VEN= 4.5 V M, D 2/ 1 7 -RDS1(-RDS1MAX) (-RDS1MIN) x 100) -RDS1AVE 1 01, 02 7 % VEN= 4.5 V M, D 2/ 1 7 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95693 DLA LAND AND MA

48、RITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TA+125C -V = -15 V, +V = +15 V VREF= OPEN, VEN= 4.0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Logic level voltage VAL13/, 4/ 1, 2, 3 01, 02 0.8 V VEN= 4.5 V M, D 2/ 1 0.5 VAH11, 2, 3 4.0 VEN= 4