DLA SMD-5962-91627 REV A-2004 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT NAND DRIVER MONOLITHIC SILICON《硅单块 四列二输入是非驱动器 改进型肖特基晶体管晶体管逻辑电路 双极数字微型电路》.pdf
《DLA SMD-5962-91627 REV A-2004 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT NAND DRIVER MONOLITHIC SILICON《硅单块 四列二输入是非驱动器 改进型肖特基晶体管晶体管逻辑电路 双极数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-91627 REV A-2004 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT NAND DRIVER MONOLITHIC SILICON《硅单块 四列二输入是非驱动器 改进型肖特基晶体管晶体管逻辑电路 双极数字微型电路》.pdf(12页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 04-09-14 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SH
2、EET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT,
3、DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT NAND AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-08-04 DRIVER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-91627 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E422-04 Provided by IHSNot for Res
4、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class level
5、s consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in
6、 the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91627 01 M C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device
7、classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-
8、RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 54AS1000A Quadruple 2-input NAND driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as f
9、ollows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case out
10、lines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 dual-in-line D GDFP1-F14 or CDFP2-F14 14 flat 2 CQCC1-N20 20 square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for d
11、evice classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 D
12、SCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range . -0.5 V dc minimum to +7.0 V dc maximum Input voltage range . -1.2 V dc at 18 mA to +7.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) . 104.5 mW 2/ Lead temperature (soldering, 10 seconds) +300
13、C Junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Maximu
14、m high level output current (IOH) . -40 mA Maximum low level output current (IOL) 40 mA Case operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this draw
15、ing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-88
16、3 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:
17、/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of t
18、his drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and
19、as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for
20、non-JAN class level B devices and as specified herein. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation is defined as VCCx ICC, and must with
21、stand the added PDdue to output current test e.g., IOProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR
22、97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordan
23、ce with 1.2.2 herein. 3.2.2 Terminal connections and descriptions. The terminal connections and descriptions shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3 3.2.5 Test ci
24、rcuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter li
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