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    DLA SMD-5962-91627 REV A-2004 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT NAND DRIVER MONOLITHIC SILICON《硅单块 四列二输入是非驱动器 改进型肖特基晶体管晶体管逻辑电路 双极数字微型电路》.pdf

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    DLA SMD-5962-91627 REV A-2004 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT NAND DRIVER MONOLITHIC SILICON《硅单块 四列二输入是非驱动器 改进型肖特基晶体管晶体管逻辑电路 双极数字微型电路》.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 04-09-14 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SH

    2、EET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT,

    3、DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT NAND AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-08-04 DRIVER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-91627 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E422-04 Provided by IHSNot for Res

    4、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class level

    5、s consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in

    6、 the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91627 01 M C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device

    7、classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-

    8、RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 54AS1000A Quadruple 2-input NAND driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as f

    9、ollows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case out

    10、lines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 dual-in-line D GDFP1-F14 or CDFP2-F14 14 flat 2 CQCC1-N20 20 square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for d

    11、evice classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 D

    12、SCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range . -0.5 V dc minimum to +7.0 V dc maximum Input voltage range . -1.2 V dc at 18 mA to +7.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) . 104.5 mW 2/ Lead temperature (soldering, 10 seconds) +300

    13、C Junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Maximu

    14、m high level output current (IOH) . -40 mA Maximum low level output current (IOL) 40 mA Case operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this draw

    15、ing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-88

    16、3 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:

    17、/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of t

    18、his drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and

    19、as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for

    20、non-JAN class level B devices and as specified herein. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation is defined as VCCx ICC, and must with

    21、stand the added PDdue to output current test e.g., IOProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR

    22、97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordan

    23、ce with 1.2.2 herein. 3.2.2 Terminal connections and descriptions. The terminal connections and descriptions shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3 3.2.5 Test ci

    24、rcuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter li

    25、mits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall

    26、 be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this

    27、option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V sha

    28、ll be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to

    29、 supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to

    30、listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A cert

    31、ificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of

    32、change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility

    33、 and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 09 (see MIL-PRF-38535, appendix A)

    34、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics.

    35、 Test Symbol Conditions -55C TC +125C 1/ unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output voltage VOHVCC= 4.5 V, IOH = -2.0 mA 1, 2, 3 All 2.5 V VIL= 0.8 V, IOH = -3.0 mA 2.4 VIH= 2.0 V 2/ IOH = -40 mA 2.0 Low level output voltage VOLIOL = 40 mA 1, 2, 3

    36、All 0.5 V Input clamp voltage VIKVCC= 4.5 V IIN = -18 mA 1, 2, 3 All -1.2 V High level input current IIH1VCC= 5.5 V VIN= 2.7 V 1, 2, 3 All 20 A IIH2VIN= 7.0 V 100 Low level input current IILVCC= 5.5 V, VIN= 0.4 V 1, 2, 3 All -0.5 mA Output current IOVCC= 5.5 V, VOUT= 2.25 V 3/ 1, 2, 3 All -50 -200 m

    37、A Supply current ICCHVCC= 5.5 V VIN= 0.0 V 1, 2, 3 All 3.5 mA ICCLVIN= 4.5 V 19 Functional tests See 4.4.1b, VCC= 4.5 and 5.5 V 7, 8 All Propagation delay time, tPLHVCC= 4.5 V, 5.5 V, 4/ 9, 10, 11 All 1 5 ns A or B to Y RL= 500, tPHLCL= 50 pF, 9, 10, 11 All 1 5 ns See figure 4 1/ Unused inputs that

    38、do not directly control the pin under test must be 2.5 V or 0.4 V. No unused inputs shall exceed 5.5 V or go less than 0.0 V. No inputs shall be floated. 2/ All outputs must be tested. In the case where only one input at VILmaximum or VIHminimum produces the proper output state, the test must be per

    39、formed with each input being selected as the VILmaximum or VIHminimum input. 3/ The output conditions have been chosen to produce a current that closely approximates one half of the true short-circuit output current, IOS. Not more than one output shall be tested at one time, and the duration of the

    40、test condition shall not exceed one second. 4/ Propagation delay limits are based on single output switching. Unused inputs = 3.5 V or 0.3 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPP

    41、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines C and D 2 Terminal number Terminal symbol 1 1A NC 2 1B 1A 3 1Y 1B 4 2A 1Y 5 2B NC 6 2Y 2A 7 GND NC 8 3Y 2B 9 3A 2Y 10 3B GND 11 4Y NC 12 4A 3Y 13 4B 3A 14 VCC3B 15 - - - NC 16 - -

    42、 - 4Y 17 - - - NC 18 - - - 4A 19 - - - 4B 20 - - - VCCFIGURE 1. Terminal connections and descriptions. Inputs Output A B Y H H L L X H X L H H = High voltage level L = Low voltage level X = Irrelevant FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without

    43、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 FIGURE 3. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

    44、NDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. CLincludes probe and jig capacitance. 2. All input pulses have the following characteristics: PRR = 10 MHz, tr= tf= 3 ns 1 ns, duty cycle = 5

    45、0%. 3. The outputs are measured one at a time with one input transition per measurement. FIGURE 4. Test circuit and switching waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91627 DEFENSE SUPPLY CE

    46、NTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (

    47、QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MI

    48、L-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiri


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