DLA SMD-5962-89568 REV L-2009 MICROCIRCUITS MEMORY DIGITAL CMOS 4K X 9 FIFO MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Update boilerplate of document. Add devices 06 and 07. Add vendor CAGE 61772 as source of supply for devices 06 and 07. Editorial changes throughout. 93-11-15 M. A. Frye D Changes in accordance with NOR 5962-R187-95 95-08-14 M. A. Frye E Updated

2、boilerplate to one-part, one-part number format. Added provisions for the inclusion of radiation-hardened devices. - glg 00-01-21 Raymond Monnin F Drawing updated to reflect current requirements. - glg 01-01-17 Raymond Monnin G Updated boilerplate paragraphs. Added 08 device. ksr 01-07-27 Raymond Mo

3、nnin H Added packages T and N. Dose rate and total dose numbers were changed; vendor had not previously shipped radhard devices. ksr 02-02-04 Raymond Monnin J Add devices 9 and 10. ksr 03-07-28 Raymond Monnin K Change the ILI and ILO in Table I for devices 9 and 10. ksr 03-10-20 Raymond Monnin L Upd

4、ate to paragraphs, part of regular review cycle. ksr 09-02-18 Robert M. Heber THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV L L L L L L L L L L L L L L L L L L SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 REV STATUS REV00 L L L L L L L L L L L L L L OF SHEET

5、S SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Michael. A. Frye DEPARTMENTS AND AGENCIE

6、S OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 08 Nov 1989 MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON AMSC N/A SIZE A CAGE CODE 67268 5962-89568 REVISION LEVEL L SHEET 1 OF 32 DSCC FORM 2233 APR 97 5962-E179-09 Provided by IHSNot for ResaleNo reproduction or networki

7、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89568 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliabili

8、ty (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN sh

9、all be as shown in the following example: For device classes M and Q not using class designator in the PIN: 5962 - 89568 01 X A | | | | | | | | | | Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number Fo

10、r device classes Q and V where class designator is included in the PIN: 5962 D 89568 01 Q X C | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing num

11、ber 1.2.1 (RHA) designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA desi

12、gnator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function Access time 01 7204 4K X 9-bit parallel FIFO 120 ns 02 7204 4K X 9-bit parallel FIFO 80 ns 03 7204 4K X 9-bit parallel F

13、IFO 65 ns 04 7204 4K X 9-bit parallel FIFO 50 ns 05 7204 4K X 9-bit parallel FIFO 40 ns 06 7204 4K X 9-bit parallel FIFO 30 ns 07 7204 4K X 9-bit parallel FIFO 20 ns 08 7204 4K X 9-bit parallel FIFO (very low power) 15 ns 09 7204 4K X 9-bit parallel FIFO 30 ns 10 7204 4K X 9-bit parallel FIFO (very

14、low power) 15 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as listed below. Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance

15、 with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89568 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L

16、EVEL L SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 dual-in-line package Y GDFP2-F28 28 flat package Z CQCC1-N32 32 rectangula

17、r chip carrier U GDIP4-T28 or CDIP3-T28 28 dual-in-line package T See figure 1 28 dual-in-line package N See figure 1 28 flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Terminal voltage with respect to ground -0.5 V dc to +7

18、.0 V dc DC output current. 50 mA Storage temperature range -65C to +155C Maximum power dissipation. 1.0 W Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ). +150C 1/ 1.4 Recommended operating conditions. Supply volta

19、ge range (VCC) +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH). 2.2 V dc minimum 2/ Input low voltage (VIL) 0.8 V dc maximum 3/ Case operating temperature range (TC). -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 0.1 rad/s) - 10 K Rads(Si) 2. APPLICABL

20、E DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

21、OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. 1/ Maximum junction temperature may be incre

22、ased to +175C during burn-in and steady state life. 2/ VIHis 2.2 V minimum for all input pins except XI which is 3.5 V minimum. 3/ 1.5 V undershoots are allowed for 10 ns once per cycle. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC

23、IRCUIT DRAWING SIZE A 5962-89568 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents ar

24、e available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless

25、otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copie

26、s of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Ele

27、ctronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or

28、 other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption h

29、as been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not af

30、fect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and p

31、hysical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal conne

32、ctions shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prep

33、aring and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full cas

34、e operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

35、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89568 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages w

36、here marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MI

37、L-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as require

38、d in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance sha

39、ll be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for dev

40、ice classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-385

41、35, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affec

42、ts this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the

43、 reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall

44、 be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38

45、535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, a

46、nd shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through

47、 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable,

48、 in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition C or D; for circuit, see 4.2.1b herein). c. Interim and final electrical parameters shall be as specified in table IIA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89568 DEFENS