BS EN 62047-18-2013 Semiconductor devices Micro-electromechanical devices Bend testing methods of thin film materials《半导体器件 微型机电装置 薄膜材料的弯曲测试方法》.pdf

《BS EN 62047-18-2013 Semiconductor devices Micro-electromechanical devices Bend testing methods of thin film materials《半导体器件 微型机电装置 薄膜材料的弯曲测试方法》.pdf》由会员分享，可在线阅读，更多相关《BS EN 62047-18-2013 Semiconductor devices Micro-electromechanical devices Bend testing methods of thin film materials《半导体器件 微型机电装置 薄膜材料的弯曲测试方法》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、BSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPart 18: Bend testing methods of thin film materialsBS EN 62047-18:2013National forewordThis British Standard is the UK implementation of EN 62047-18:2013. It isidentical to IEC 62047-18:2013.The UK participation in its pr

2、eparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct applicat

3、ion. The British Standards Institution 2013.Published by BSI Standards Limited 2013ISBN 978 0 580 72011 6ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee

4、on 31 October 2013.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-18:2013EUROPEAN STANDARD EN 62047-18 NORME EUROPENNE EUROPISCHE NORM September 2013 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotec

5、hnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B - 1000 Brussels 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62047-18:2013 E ICS 31.080.99 English version Semicond

6、uctor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013) Dispositifs semiconducteurs - Dispositif microlectromcaniques - Partie 18: Mthodes dessai de flexion des matriaux en couche mince (CEI 62047-18:2013) Halbleiterbauelemente - Bau

7、elemente der Mikrosystemtechnik - Teil 18: Biegeprfverfahren fr Dnnschichtwerkstoffe (IEC 62047-18:2013) This European Standard was approved by CENELEC on 2013-08-21. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European

8、 Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official version

9、s (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical commit

10、tees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Sl

11、ovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. BS EN 62047-18:2013EN 62047-18:2013 - 2 - Foreword The text of document 47F/155/FDIS, future edition 1 of IEC 62047-18, prepared by SC 47F “Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC

12、-CENELEC parallel vote and approved by CENELEC as EN 62047-18:2013. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2014-05-21 latest date by which the national standards

13、 conflicting with the document have to be withdrawn (dow) 2016-08-21 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notic

14、e The text of the International Standard IEC 62047-18:2013 was approved by CENELEC as a European Standard without any modification. BS EN 62047-18:2013- 3 - EN 62047-18:2013 Annex ZA (normative) Normative references to international publications with their corresponding European publications The fol

15、lowing documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an i

16、nternational publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 62047-6 2009 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials EN 62047-6 201

17、0 BS EN 62047-18:2013 2 62047-18 IEC:2013 CONTENTS 1 Scope . 5 2 Normative references . 5 3 Symbols and designations 6 4 Test piece 6 4.1 Design of test piece . 6 4.2 Preparation of test piece . 7 4.3 Test piece width and thickness 7 4.4 Storage prior to testing 7 5 Testing method . 7 5.1 General .

18、7 5.2 Method for mounting of test piece 9 5.3 Method for loading. 9 5.4 Speed of testing 9 5.5 Displacement measurement 9 5.6 Test environment . 9 5.7 Data analysis 9 5.8 Material for test pieces 10 6 Test report 10 Annex A (informative) Precautions for the test piece/substrate interface . 11 Annex

19、B (informative) Precautions necessary for the force displacement relationship 12 Figure 1 Schematically shown test piece with substrate . 6 Figure 2 Measurement method . 8 Figure A.1 Finishing angle of substrate contact area with test piece . 11 Figure B.1 Cantilever type bend test piece of metallic

20、 glass in accordance with IEC 62047-18 12 Figure B.2 Typical example of relationship between force and displacement 13 Table 1 Symbols and designation of test piece . 6 BS EN 62047-18:201362047-18 IEC:2013 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 18: Bend testing methods of thin

21、film materials 1 Scope This part of IEC 62047 specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 m and 10 m. Thin films are used as main structural materials for Micro-electromechanical Systems (abbreviated as MEMS

22、 in this document) and micromachines. The main structural materials for MEMS, micromachines, etc., have special features, such as a few micron meter size, material fabrication by deposition, photolithography, and/ or non-mechanical machining test piece. This International Standard specifies the bend

23、 testing and test piece shape for micro-sized smooth cantilever type test pieces, which enables a guarantee of accuracy corresponding to the special features. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for it

24、s application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-6:2009, Semiconductor devices Micro-electromechanical devices Part 6: Axial fatigue testing methods of thin film ma

25、terials BS EN 62047-18:2013 6 62047-18 IEC:2013 3 Symbols and designations Symbols and corresponding designations are given in Table 1. Table 1 Symbols and designation of test piece Symbol Unit Designation W m Width of test piece L m Length of test piece S m Thickness of test piece LPALPB, LPCm Dist

26、ance between loading point, A, B or C, and root of the test piece respectively P N Force m Displacement IZ(m)4Moment of inertia of area E MPa Elastic modulus of cantilever material Figure 1 below shows a typical shape of cantilever beam test piece. 3 4 W L S 1 2 IEC 1712/13 Key 1 Top view 3 Substrat

27、e 2 Side view 4 Test piece Figure 1 Schematically shown test piece with substrate 4 Test piece 4.1 Design of test piece The test pieces are of a shape of cantilever beam as shown in Figure 1 and the shape of their cross-section shall be simple , in order to facilitate calculation of the moment of in

28、ertia of area. The shape of the cross-section of the test piece should be simple, for example rectangular or trapezoid. The relation between test piece length (L) of the parallel part of the test piece, the width (W) and thickness (S) should be 10 L/W 5 and 100 L/S 10. The fixed end of the test piec

29、e shall be placed within a substrate as shown in Figure 1. Contact point of the test piece with substrate is important to avoid plastic deformation and/or BS EN 62047-18:201362047-18 IEC:2013 7 fracture at the contact point of test piece root and substrate because of stress concentration (see Annex

30、A). When a different shape of test piece is used which elastic deformation behavior does not follow Equation (1), the different shape of test piece and the equation in place of Equation (1) shall be recorded. In order to minimize the influence of size, the size of test piece should have the same ord

31、er as that of the objective device component. 4.2 Preparation of test piece The test piece should be fabricated using the same process as when the thin film is applied to actual devices, because the mechanical properties depend on the fabrication processes. The test piece also shall be fabricated fo

32、llowing the procedures specified in IEC 62047-6:2009, Clause 4.2 Preparation of test piece. The substrate removal process should be carefully chosen to prevent damaging the supporting part of the substrate (see Annex A) and the supporting part of the test piece. The thin film, which has internal str

33、ess distribution along the thickness, cannot be tested due to curling after release from the substrate. 4.3 Test piece width and thickness The width and thickness of each test piece shall be measured, as the film thickness is not usually uniform over a wafer. Both the width and thickness through the

34、 parallel part of the test piece shall be specified within the accuracy range of 1 % and 5 %. Each test piece should be measured directly (see IEC 62047-6:2009, 4.3 Test piece thickness). 4.4 Storage prior to testing In the case of thin films, storage environment can affect the mechanical properties

35、 (see IEC 62047-6:2009, 4.4 Storage prior to testing). 5 Testing method 5.1 General The employed testing machine includes features to facilitate displacement, loading and positioning, and should be equipped with a measurement system of force and displacement. In case of measurement, loading is made

36、on a point of the cantilever beam test piece as shown in Figure 2a) and 2b) using a sphere-shaped or a knife-edge shaped loading tool, and the positions of loading points (A, B or C) of test pieces as shown in Figure 2a) should be recorded with the relation between force (P) and displacement () of t

37、he cantilever beam as shown in Figure 2c). The loading point location through the parallel part of the test piece shall be specified within the accuracy range of 1 % of the length of the test piece. The knife edge tip radius is 5 m and the straightness shall be within the accuracy of 1 % of the leng

38、th of the test piece. The angle between the knife-edge length direction and the test piece surface and the longitudinal direction of the test piece are within 2 and 4 respectively. These data shall be measured and recorded. BS EN 62047-18:2013 8 62047-18 IEC:2013 3 2 A 1 B C LPALPBLPCIEC 1713/13 a)

39、Cantilever beam test piece with loading point P 2 3 4 IEC 1714/13 b) Cantilever beam test piece with loading tool P A B C IEC 1715/13 c) Relation between force and displacement Key 1 Loading point at A,B or C 3 Test piece 2 Substrate 4 Sphere shaped tip loading tool Figure 2 Measurement method BS EN

40、 62047-18:201362047-18 IEC:2013 9 5.2 Method for mounting of test piece A substrate including test pieces shall be mounted on the testing equipment so that the loading axis and the test piece surface are aligned at a right angle. Fixing of test pieces to substrates and to testing machines shall meet

41、 the following requirements: a) The test pieces shall be securely fixed to the substrate, and shall not move during testing. The substrate should be firmly fixed on the tool of the test equipment, whose stiffness is higher than that of the substrate. b) During testing, the substrate of test piece sh

42、ould be fixed, and the direction of loading axis of the testing machine should be within 5 from perpendicular to the substrate surface. 5.3 Method for loading The contacting portion of the sphere part of the tool to be loaded on test pieces should be in the shape of a sphere as shown in Figure 2b) o

43、r a knife-edge. In case that the diameter of the sphere shape is extremely smaller than the thickness (S) and a width (W) of test pieces, the load should be carefully applied to avoid serious local deformation and fracture at the contact point of test piece with the sphere. Deformation of test piece

44、s should be minimized within a range of pure elastic deformation. Movement of loading tool should go straight. The displacement () of cantilever beam shall be small for minimizing the contact point being off the initial loading point of test piece during bending. A load cell with a resolution adequa

45、te to guarantee 5 % accuracy of the applied force shall be used. The drift of the load cell should be less than 1 % of the full-scale force during testing. (See IEC 62047-6:2009, 5.4 Method of loading.) 5.4 Speed of testing The displacement speed or loading speed should be constant, and it shall be

46、within the measurement equipment ability. 5.5 Displacement measurement The resolution of the displacement sensor shall be more precise than 0,5 % of the maximum range of a displacement measurement. If possible, the direct measurement of test piece bending displacement () is recommended because the l

47、oad cell of low force range has a low stiffness. 5.6 Test environment Testing temperature and humidity shall be controlled to avoid fluctuations during testing, and a particular attention is required for testing temperature. 5.7 Data analysis The relation between force (P) and displacement () of can

48、tilever beam can be expressed as Equation (1) within an elastic region. When using a test piece of another shape, the shape shall be measured precisely with record. Data of force (P) and displacement () shall be available to use with record. Z2EIPL3P= (1) The relation between force (P) and displacem

49、ent () of the cantilever beam depends on the cross-sectional shape of the test piece, which is the moment of inertia of area (Iz), and the distance between the loading point and the root of the test piece. It is recommended that the BS EN 62047-18:2013 10 62047-18 IEC:2013 test piece shape, the measurement method and the measurement accuracy are recorded. Regarding the force and displacement relationship obtained as schematically shown in Figure 2c), th