BS EN 62047-17-2015 Semiconductor devices Micro-electromechanical devices Bulge test method for measuring mechanical properties of thin films《半导体器件 微型机电装置 用于测量薄膜力学性能的胀形试验方法》.pdf

《BS EN 62047-17-2015 Semiconductor devices Micro-electromechanical devices Bulge test method for measuring mechanical properties of thin films《半导体器件 微型机电装置 用于测量薄膜力学性能的胀形试验方法》.pdf》由会员分享，可在线阅读，更多相关《BS EN 62047-17-2015 Semiconductor devices Micro-electromechanical devices Bulge test method for measuring mechanical properties of thin films《半导体器件 微型机电装置 用于测量薄膜力学性能的胀形试验方法》.pdf（34页珍藏版）》请在麦多课文档分享上搜索。

1、BSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPart 17: Bulge test method for measuring mechanical properties of thin filmsBS EN 62047-17:2015National forewordThis British Standard is the UK implementation of EN 62047-17:2015. It isidentical to IEC 62047-17:2015.The UK

2、 participation in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible

3、for its correct application. The British Standards Institution 2015.Published by BSI Standards Limited 2015ISBN 978 0 580 72203 5ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy

4、 and Strategy Committee on 31 July 2015.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-17:2015EUROPEAN STANDARDNORME EUROPENNEEUROPISCHE NORMEN 62047-17 July 2015 ICS 31.080.99 English Version Semiconductor devices - Micro-electromechanical devices - Part

5、 17: Bulge test method for measuring mechanical properties ofthin films (IEC 62047-17:2015) Dispositifs semiconducteurs - Dispositifsmicrolectromcaniques - Partie 17: Mthode dessai derenflement pour la mesure des proprits mcaniques descouches minces (IEC 62047-17:2015) Halbleiterbauelemente - Bauele

6、mente derMikrosystemtechnik - Teil 17: Wlbungs-Prfverfahren zurBestimmung mechanischer Eigenschaften dnner Schichten (IEC 62047-17:2015) This European Standard was approved by CENELEC on 2015-04-09. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the con

7、ditions for giving this European Standard the status of a national standard without any alteration.Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard e

8、xists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions.CENELEC members are the na

9、tional electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, P

10、ortugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation ElectrotechniqueEuropisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-

11、1000 Brussels 2015 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62047-17:2015 E EN 62047-17:2015 2 European foreword The text of document 47F/210/FDIS, future edition 1 of IEC 62047-17, prepared by SC 47F “Microelectromechanical

12、systems” of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-17:2015. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by en

13、dorsement (dop) 2016-01-10 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2018-04-09 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held respon

14、sible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62047-17:2015 was approved by CENELEC as a European Standard without any modification. BS EN 62047-17:2015EN 62047-17:2015 3 Annex ZA (normative) Normative references to international p

15、ublications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the refe

16、renced document (including any amendments) applies. NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available her

17、e: www.cenelec.eu. Publication Year Title EN/HD Year IEC 62047-2 2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials EN 62047-2 2006 BS EN 62047-17:2015null 2 null IEC 62047-17:2015 nullIEC 201 5 CONTENTS FOREWORD . 4 1 Scope 6 2 Norma

18、tive references 6 3 Terms, definitions and symbols 6 3.1 Terms and definitions 6 3.2 Symbols 7 4 Principle of bulge test 7 5 Test apparatus and environment 8 5.1 General . 8 5.2 Apparatus . 9 5.2.1 Pressuring device 9 5.2.2 Bulge (pressure) chamber 9 5.2.3 Height measurement units . 9 5.3 Test envir

19、onment 10 6 Specimen 10 6.1 General . 10 6.2 Shape and dimension of specimen 10 6.3 Measurement of test piece dimension . 10 7 Test procedure and analysis 11 7.1 Test procedure 11 7.2 Data analysis 12 8 Test report . 13 Annex A (informative) Determination of mechanical properties . 14 A.1 General .

20、14 A.2 Determination of mechanical properties using stress-strain curve . 14 A.3 Determination of mechanical properties using analysis of load-deflection 16 Annex B (informative) Deformation measurement techniques . 19 B.1 General . 19 B.2 Laser interferometry technique 19 B.3 Capacitance type measu

21、rement 19 Annex C (informative) Example of test piece fabrication: MEMS process . 25 C.1 Test piece fabrication 25 C.2 Measurement of shape of specimen 26 Bibliography 27 Figure 1 null Typical example of bulge specimen 7 Figure 2 null Membrane window bulged by pressure . 8 Figure 3 null Typical exam

22、ple of bulge test apparatus 8 Figure 4 null Bulge membrane window shapes . 10 Figure 5 null Example of typical pressure-height curve obtained from bulge test . 12 Figure A.1 null Determination of biaxial modulus in the stress-strain curve obtained from bulge test 18 Figure B.1 null Typical example o

23、f laser interferometer configuration . 21 BS EN 62047-17:2015IEC 62047-17:2015 null IEC 2015 null 3 null Figure B.2 null Typical fringe patterns obtained from laser Michelson interferometry and ESPI system . 22 Figure B.3 null Typical example of the measurement system using a photo detector 23 Figur

24、e B.4 null Schematic of capacitance bulge tester 23 Figure B.5 null Typical example of relationship between bulge height and capacitance change 24 Figure C.1 null Example of fabrication procedure for bulge test piece . 25 Table 1 null Symbols and designations of a specimen 7 Table A.1 null Examples

25、of various expressions of parameters, C1and C2(), for thin square films 17 Table A.2 null Examples of various expressions of parameters, C1and C2(), for thin spherical films . 17 BS EN 62047-17:2015null 4 null IEC 62047-17:2015 nullIEC 201 5 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR

26、DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 17: Bulge test method for measuring mechanical properties of thin films FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Commi

27、ttees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Availa

28、ble Specifications (PAS) and Guides (hereafter referred to as nullEC Publication(s)null). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental

29、 organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on techn

30、ical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IE

31、C National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international unifor

32、mity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) I

33、EC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure

34、 that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any

35、 nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the refer

36、enced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. Intern

37、ational Standard IEC 62047-17 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/210/FDIS 47F/215/RVD Full information on the voting for

38、 the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. BS EN 62047-17:2015IEC 62047-17:2015 null IEC 2015 null 5 null A list of all parts in the IEC 62047 series, published

39、 under the general title Semiconductor devices Micro-electromechanical devices, can be found in the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data rela

40、ted to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct unders

41、tanding of its contents. Users should therefore print this document using a colour printer. BS EN 62047-17:2015null 6 null IEC 62047-17:2015 nullIEC 201 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 17: Bulge test method for measuring mechanical properties of thin films 1 Scope This p

42、art of IEC 62047 specifies the method for performing bulge tests on the free-standing film that is bulged within a window. The specimen is fabricated with micro/nano structural film materials, including metal, ceramic and polymer films, for MEMS, micromachines and others. The thickness of the film i

43、s in the range of 0,1 m to 10 m, and the width of the rectangular and square membrane window and the diameter of the circular membrane range from 0,5 mm to 4 mm. The tests are carried out at ambient temperature, by applying a uniformly-distributed pressure to the testing film specimen with bulging w

44、indow. Elastic modulus and residual stress for the film materials can be determined with this method. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cit

45、ed applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-2:2006, Semiconductor devices Micro-electromechanical devices Part 2: Tensile testing method of thin film materials 3 Terms, definitions and symbols 3.1 Terms and definitio

46、ns For the purposes of this document, the following terms and definitions apply. 3.1.1 residual stress 0stress which exists in a specimen in the absence of an external load 3.1.2 biaxial modulus M elastic modulus in plane strain condition 3.1.3 membrane window testing area, contacted directly with t

47、he pressure media and surrounded by a frame, in the free standing film specimen Note 1 to entry: See Figure 1. BS EN 62047-17:2015IEC 62047-17:2015 null IEC 2015 null 7 null Key 1 top view 2 side view 3 membrane window 4 thin film deposited Figure 1 Typical example of bulge specimen 3.2 Symbols The

48、symbols used in this document are presented in Table 1 below. Table 1 Symbols and designations of a specimen Symbol Unit Designation t m thickness of a membrane or thin film R m radius of a bulged membrane window h m maximum vertical displacement at the centre of the bulged window d mm diameter in a

49、 circular window a,b mm half-width and half-length of the rectangular window, respectively. In case of square window, a equals to b. p MPa differential pressure applied to the membrane window C1, C2coefficients in generalized linear-elastic bulge equation 4 Principle of bulge test Nominally free-standing film specimen with a frame surrounding a bulging membrane window as shown in Figure 1 is required and it should be mounted on a bulge testing system which can apply differential pressure to the specime