BS PD IEC TS 62878-2-1-2015 Device embedded substrate Guidelines General description of technology《装置内埋基板 指南 通用技术说明》.pdf
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1、BSI Standards Publication Device embedded substrate Part 2-1: Guidelines General description of technology PD IEC/TS 62878-2-1:2015National foreword This Published Document is the UK implementation of IEC/TS 62878-2-1:2015. The UK participation in its preparation was entrusted to Technical Committee
2、 EPL/501, Electronic Assembly Technology. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. The British Standar
3、ds Institution 2015. Published by BSI Standards Limited 2015 ISBN 978 0 580 82120 2 ICS 31.180; 31.190 Compliance with a British Standard cannot confer immunity from legal obligations. This Published Document was published under the authority of the Standards Policy and Strategy Committee on 30 Apri
4、l 2015. Amendments/corrigenda issued since publication Date Text affected PUBLISHED DOCUMENT PD IEC/TS 62878-2-1:2015 IEC TS 62878-2-1 Edition 1.0 2015-03 TECHNICAL SPECIFICATION SPECIFICATION TECHNIQUE Device embedded substrate Part 2-1: Guidelines General description of technology Substrat avec ap
5、pareil(s) intgr(s) Partie 2-1: Directives Description gnrale de la technologie INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.180; 31.190 ISBN 978-2-8322-2434-2 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commi
6、ssion Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colour inside PD IEC/TS 62878-2-1:2015 2 IEC TS 62878-2-1:2015 IEC 2015 CONTENT
7、S FOREWORD . 4 INTRODUCTION . 6 1 Scope 7 2 Normative references. 7 3 Terms, definitions and abbreviations 7 3.1 Terms and definitions 7 3.2 Abbreviations 7 4 Technology of device embedded substrate . 7 4.1 Basic structures 7 4.2 Technology of device embedded substrate 9 4.3 Structures of device emb
8、edded substrates and terms used in this specification. 12 5 Jisso mounting and interconnection 13 5.1 General . 13 5.2 Interconnections and structures of device embedded substrate 15 5.3 Device embedding by conventional process . 17 5.4 Device embedding using vias 19 6 Naming of each section . 22 6.
9、1 General . 22 6.2 General definition of top and bottom surfaces 22 6.3 Naming of layers and interconnection position . 24 6.4 Definitions of insulation layer thickness, conductor gap and connection distance between terminal and conductor 27 General . 27 6.4.1Insulation layer thickness, conductor ga
10、p and electrode/conductor gap in 6.4.2 pad connection 27 Insulation layer thickness, conductor gap and electrode/conductor gap in 6.4.3 a via connection . 28 6.5 Additional information 28 Additional information for the insulation layer 28 6.5.1Additional information for conductor gap and electrode/c
11、onductor gap . 29 6.5.2 Bibliography . 30 Figure 1 Examples of device embedded substrate 8 Figure 2 Completed device embedded substrate (pad connection) 9 Figure 3 Completed device embedded substrate (via connection) . 9 Figure 4 Structure of a pad connection type substrate on a passive device embed
12、ded ceramics base 10 Figure 5 Structure of a device embedded substrate using a ceramic board as the base (via connection type) . 10 Figure 6 Entire structure of device embedded substrate 15 Figure 7 Base (typical structure) . 16 Figure 8 Base (cavity structure) 16 Figure 9 Base (insulator) 16 PD IEC
13、/TS 62878-2-1:2015 3 IEC TS 62878-2-1:2015 IEC 2015 Figure 10 Base (Conductive carrier metal plate). 16 Figure 11 Passive device embedded ceramic board used as a base 17 Figure 12 Ceramic board used as base (ceramic) . 17 Figure 13 Wire bonding connection and embedding of active device bare die 17 F
14、igure 14 Soldering connection and embedding of active device . 18 Figure 15 Soldering connection of square type passive device 18 Figure 16 Conductive resin connection and embedding of active device 18 Figure 17 Conductive resin connection and embedding of square type passive device . 19 Figure 18 S
15、oldering connection into through hole and embedding of passive device 19 Figure 19 Connection by copper plating after embedding of active device . 19 Figure 20 Connection by copper plating after embedding of square type passive device 20 Figure 21 Conductive paste connection after embedding of activ
16、e device package 20 Figure 22 Conductive paste connection after embedding of square type passive device chip 20 Figure 23 Device embedded substrate for device embedding in multi-layers 21 Figure 24 Embedding of devices over multiple layers 21 Figure 25 Resin base substrate 21 Figure 26 Conductor and
17、 metal sheet/copper foil as base substrate 22 Figure 27 Device embedded substrate using passive device embedded ceramic substrates as base substrate Second type 22 Figure 28 Definition of top and bottom surfaces 23 Figure 29 Definition of top and bottom surfaces (mounting of a mother board) . 23 Fig
18、ure 30 Names of layers in pad connection 24 Figure 31 Additional information concerning the interconnection position 25 Figure 32 Names of layers in via connection I . 25 Figure 33 Names of layers in via connection II 26 Figure 34 Names of layers in via connection III . 26 Figure 35 Definition of in
19、sulating layer thickness and conductor gap in pad connection28 Figure 36 Definition of electrode gap in via connection . 28 Figure 37 Additional illustration of insulating layer thickness . 29 Figure 38 Additional illustration for conductor gap and electrode/connector gap 29 Table 1 Classification o
20、f device embedding 11 Table 2 Formed embedded device into the substrate 12 Table 3 Embedded device structure and fabrication process . 13 Table 4 Jisso mounting and interconnection of device embedded substrate . 14 Table 5 Names of layers of device embedded board . 27 PD IEC/TS 62878-2-1:2015 4 IEC
21、TS 62878-2-1:2015 IEC 2015 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ DEVICE EMBEDDED SUBSTRATE Part 2-1: Guidelines General description of technology FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechn
22、ical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
23、 Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, gov
24、ernmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions
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