IEEE C62 42 3-2017 en Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports-Part 3 Silicon PN-Junction.pdf

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1、IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment PortsPart 3: Silicon PN-Junction IEEE Std C62.42.3-2017 IEEE Power and Energy Society Sponsored by the Surge Protective Devices Committee IEEE 3 Park Avenue New York, NY 10016-5997 USAIEEE Std C62

2、.42.3-2017 IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment PortsPart 3: Silicon PN-Junction Sponsor Surge Protective Devices Committee of the IEEE Power and Energy Society Approved 23 March 2017 IEEE-SA Standards BoardAbstract: Surge protective

3、 components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42 guide series. This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including forward biased semiconductor diod

4、es, Zener breakdown semiconductor diodes, avalanche breakdown semiconductor diodes, punch-through semiconductor bipolar junction transistor diodes, and fold-back semiconductor bidirectional transistor diodes, as well as component construction; characteristics; ratings; and application examples. Keyw

5、ords: avalanche breakdown, clamping, diode, fold back, forward biased, IEEE C62.42.3, PN-junction, punch-through, silicon, Zener breakdown The Institute of Electrical and Electronics Engineers, Inc. 3 Park Avenue, New York, NY 10016-5997, USA Copyright 2018 by The Institute of Electrical and Electro

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35、andards Association.6 Copyright 2018 IEEE. All rights reserved. Participants At the time this IEEE guide was completed, the Low V oltage Surge Protective Components Application Guide Working Group had the following membership: Michael J. Maytum, Chair William Travis, Vice Chair Tim Ardley Robert Ash

36、ton Frank Basciano Nisar Chaudhry Leonard Drewes Bob Fried Ernie Gallo Bogdan Klobassa Peter Kobsa Albert Martin Wolfgang Oertel Thomas Tran The following members of the individual balloting committee voted on this guide. Balloters may have voted for approval, disapproval, or abstention. Robert Asht

37、on Frank Basciano William Bush William Byrd Randall Groves Phillip Havens Raymond Hill Werner Hoelzl Ronald Hotchkiss John John Yuri Khersonsky Jim Kulchisky Lawrence Long Albert Martin Michael J. Maytum Michael Newman Charles Ngethe Wolfgang Oertel Lorraine Padden Iulian Profir Thomas Rozek Nikunj

38、Shah Jerry Smith David Tepen James Timperley John V ergis John Wang Jian Y u When the IEEE-SA Standards Board approved this guide on 23 March 2017, it had the following membership: Jean-Philippe Faure, Chair Gary Hoffman, Vice Chair John D. Kulick, Past Chair Konstantinos Karachalios, Secretary Chuc

39、k Adams Masayuki Ariyoshi Ted Burse Stephen Dukes Doug Edwards J. Travis Griffith Michael Janezic Thomas Koshy Joseph L. Koepfinger* Kevin Lu Daleep Mohla Damir Novosel Ronald C. Petersen Annette D. Reilly Robby Robson Dorothy Stanley Adrian Stephens Mehmet Ulema Phil Wennblom Howard Wolfman Y u Y u

40、an *Member Emeritus7 Copyright 2018 IEEE. All rights reserved. Introduction This introduction is not part of IEEE Std C62.42.3-2017, IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment PortsPart 3: Silicon PN-Junction. PN-junction voltage clamping

41、diodes have one or more PN junctions in a silicon chip. Depending on the PN-junction arrangement the clamping characteristic can be one of five types: forward-biased, Zener, avalanche, punch-through, or fold-back. The chosen component technology for a given application depends on the required clampi

42、ng voltage. Clamping voltages above 10 V dictate the use of avalanche or fold-back technologies. Clamping voltages of 6 V and below are best suited to punch-through or forward-biased technologies. To lower the capacitance, these clamping components are integrated with series diodes or diode bridges.

43、 Making the diode bridge a multi-phase diode bridge allows the protection of multiple conductors with a single clamping protection component. Clause 3 of this document gives the terms used to describe the different types of P-N-junction voltage clamping component and Clause 4 covers the various phys

44、ical PN-junction constructions. Clause 5 deals with the characteristics of the different PN-junction structures and Clause 6 details the component ratings. Clause 7 describes application examples for the protection of ac, dc, or signal circuits and component series and parallel combinations. Acknowledgments Portions of this standard reprinted with permission from Michael J. Maytum, Silicon PN-junction components 2014.