EN 60749-43-2017 en Semiconductor devices - Mechanical and climatic test methods - Part 43 Guidelines for IC reliability qualification plans.pdf

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1、Semiconductor devices - Mechanical and climatic test methodsPart 43: Guidelines for IC reliability qualification plans (IEC 60749-43:2017)BS EN 60749-43:2017BSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 60749-43

2、September 2017 ICS 31.080.01 English Version Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans (IEC 60749-43:2017) Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 43: Lignes directrices concernant

3、 les plans de qualification de la fiabilit des CI (IEC 60749-43:2017) Halbleiterbauelemente - Mechanische und klimatische Prfverfahren - Teil 43: Leitfaden Plne zur Zuverlssigkeitsqualifikation von integrierten Schaltungen (IEC 60749-43:2017) This European Standard was approved by CENELEC on 2017-07

4、-20. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obta

5、ined on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified t

6、o the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece

7、, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation

8、Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 60749-43:2017 E National forewordThis British St

9、andard is the UK implementation of EN 60749-43:2017. It is identical to IEC 60749-43:2017.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publica

10、tion does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. The British Standards Institution 2017 Published by BSI Standards Limited 2017ISBN 978 0 580 80345 1ICS 31.080.01Compliance with a British Standard cannot confer immunity f

11、rom legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 September 2017.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 6074943:2017EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 607

12、49-43 September 2017 ICS 31.080.01 English Version Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans (IEC 60749-43:2017) Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 43: Lignes directrices conc

13、ernant les plans de qualification de la fiabilit des CI (IEC 60749-43:2017) Halbleiterbauelemente - Mechanische und klimatische Prfverfahren - Teil 43: Leitfaden Plne zur Zuverlssigkeitsqualifikation von integrierten Schaltungen (IEC 60749-43:2017) This European Standard was approved by CENELEC on 2

14、017-07-20. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may b

15、e obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and noti

16、fied to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany,

17、Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalis

18、ation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 60749-43:2017 E BS EN 6074943:2017EN 60749

19、-43:2017 2 European foreword The text of document 47/2389/FDIS, future edition 1 of IEC 60749-43, prepared by IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60749-43:2017. The following dates are fixed: latest date by which the document

20、 has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2018-04-20 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2020-07-20 Attention is drawn to the possibility that some of the elements

21、 of this document may be the subject of patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 60749-43:2017 was approved by CENELEC as a European Standard without any modification. In the offi

22、cial version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60068-2-1 NOTE Harmonized as EN 60068-2-1. IEC 60068-2-30 NOTE Harmonized as EN 60068-2-30. IEC 60749-11 NOTE Harmonized as EN 60749-11. BS EN 6074943:2017EN 60749-43:2017 2 European foreword The te

23、xt of document 47/2389/FDIS, future edition 1 of IEC 60749-43, prepared by IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60749-43:2017. The following dates are fixed: latest date by which the document has to be implemented at national

24、level by publication of an identical national standard or by endorsement (dop) 2018-04-20 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2020-07-20 Attention is drawn to the possibility that some of the elements of this document may be the subjec

25、t of patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 60749-43:2017 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the

26、 following notes have to be added for the standards indicated: IEC 60068-2-1 NOTE Harmonized as EN 60068-2-1. IEC 60068-2-30 NOTE Harmonized as EN 60068-2-30. IEC 60749-11 NOTE Harmonized as EN 60749-11. EN 60749-43:2017 3 Annexe ZA (normative) Rfrences normatives dautres publications internationale

27、s avec les publications europennes correspondantes Les documents suivants, en tout ou en partie, sont rfrencs normativement dans le prsent document et sont indispensables pour son application. Pour les rfrences dates, seule ldition cite sapplique. Pour les rfrences non-dates, la dernire dition du do

28、cument rfrenc (y compris les amendements) sapplique. NOTE 1 Dans le cas o une publication internationale est modifie par des modifications communes, indiqu par (mod), lEN/le HD correspondant(e) sapplique. NOTE 2 Les informations les plus rcentes concernant les dernires versions des Normes Europennes

29、 listes dans la prsente annexe sont disponibles ladresse suivante: www.cenelec.eu. Publication Anne Titre EN/HD Anne IEC 60749-5 - Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test EN 60749-5 - IEC 60749-6 - Semiconductor devices

30、- Mechanical and climatic test methods - Part 6: Storage at high temperature EN 60749-6 - IEC 60749-15 - Dispositifs a semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 15: Rsistance la temprature de soudage pour dispositifs par trous traversants EN 60749-15 - IEC 60749-20 - Dispos

31、itifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 20: Rsistance des CMS botiers plastique leffet combin de lhumidit et de la chaleur de brasage EN 60749-20 - IEC 60749-21 - Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 21: Brasabilit EN 60749

32、-21 - IEC 60749-23 - Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 23: Dure de vie en fonctionnemement haute temprature EN 60749-23 - IEC 60749-25 - Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 25: Cycles de temprature EN 60749-25

33、- IEC 60749-26 - Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 26: Essai de sensibilit aux dcharges lectrostatiques (DES) - Modle du corps humain (HBM) EN 60749-26 - IEC 60749-28 - Dispositifs semiconducteurs - Mthodes dessai mcaniques et climatiques - Partie 28: Es

34、sai de sensibilit aux dcharges lectrostatiques (DES) Modle de dispositif charg par contact direct (DC-CDM) EN 60749-28 - IEC 60749-29 - Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 29: Essai de verrouillage EN 60749-29 - IEC 60749-42 - Semiconductor devices - Mecha

35、nical and climatic test methods - Part 42: Temperature humidity storage EN 60749-42 - BS EN 6074943:2017This page deliberately left blank 2 IEC 60749-43:2017 IEC 2017 CONTENTS FOREWORD . 4 INTRODUCTION . 6 1 Scope 7 2 Normative references 7 3 Terms and definitions 8 4 Product categories and applicat

36、ions 8 5 Failure . 9 5.1 Failure distribution 9 5.2 Early failure 10 5.2.1 Description 10 5.2.2 Early failure rate 11 5.2.3 Screening 14 5.3 Random failure . 17 5.3.1 Description 17 5.3.2 Mean failure rate . 17 5.4 Wear-out failure 20 5.4.1 Description 20 5.4.2 Wear-out failure rate 20 6 Reliability

37、 test 23 6.1 Reliability test description . 23 6.2 Reliability test plan . 23 6.2.1 Procedures for creating a reliability test plan . 23 6.2.2 Estimation of the test time required to confirm the TDDB from the number of test samples . 26 6.2.3 Estimation of the number of samples required to confirm t

38、he TDDB from the test time. 27 6.3 Reliability test methods . 28 6.4 Acceleration models for reliability tests . 31 6.4.1 Arrhenius model 31 6.4.2 V-model: 32 6.4.3 Absolute water vapor pressure model 32 6.4.4 Coffin-Manson model . 32 7 Stress test methods . 32 8 Supplementary tests 33 9 Summary tab

39、le of assumptions 34 10 Summary . 36 Bibliography 37 Figure 1 Bathtub curve . 10 Figure 2 Failure process of IC manufacturing lots during the early failure period . 11 Figure 3 Weibull conceptual diagram of the early failure rate . 12 Figure 4 Example of a failure ratio: (in hundreds) and the number

40、 of failures for CL of 60 % 14 Figure 5 Screening and estimated early fail rate in Weibull diagram 15 Figure 6 Bathtub curve setting the point immediately after production as the origin . 16 2 IEC 60749-43:2017 IEC 2017 CONTENTS FOREWORD . 4 INTRODUCTION . 6 1 Scope 7 2 Normative references 7 3 Term

41、s and definitions 8 4 Product categories and applications 8 5 Failure . 9 5.1 Failure distribution 9 5.2 Early failure 10 5.2.1 Description 10 5.2.2 Early failure rate 11 5.2.3 Screening 14 5.3 Random failure . 17 5.3.1 Description 17 5.3.2 Mean failure rate . 17 5.4 Wear-out failure 20 5.4.1 Descri

42、ption 20 5.4.2 Wear-out failure rate 20 6 Reliability test 23 6.1 Reliability test description . 23 6.2 Reliability test plan . 23 6.2.1 Procedures for creating a reliability test plan . 23 6.2.2 Estimation of the test time required to confirm the TDDB from the number of test samples . 26 6.2.3 Esti

43、mation of the number of samples required to confirm the TDDB from the test time. 27 6.3 Reliability test methods . 28 6.4 Acceleration models for reliability tests . 31 6.4.1 Arrhenius model 31 6.4.2 V-model: 32 6.4.3 Absolute water vapor pressure model 32 6.4.4 Coffin-Manson model . 32 7 Stress tes

44、t methods . 32 8 Supplementary tests 33 9 Summary table of assumptions 34 10 Summary . 36 Bibliography 37 Figure 1 Bathtub curve . 10 Figure 2 Failure process of IC manufacturing lots during the early failure period . 11 Figure 3 Weibull conceptual diagram of the early failure rate . 12 Figure 4 Exa

45、mple of a failure ratio: (in hundreds) and the number of failures for CL of 60 % 14 Figure 5 Screening and estimated early fail rate in Weibull diagram 15 Figure 6 Bathtub curve setting the point immediately after production as the origin . 16 BS EN 6074943:2017IEC 60749-43:2017 IEC 2017 3 Figure 7

46、Bathtub curve setting the point after screening as the origin 17 Figure 8 Conceptual diagram of calculation method for the mean failure rate from the exponential distribution . 18 Figure 9 Conceptual diagram of calculation method for the mean failure rate as an extension of early failure . 19 Figure

47、 10 Conceptual diagram of the wear-out failure 21 Figure 11 Conceptual diagram describing the concept of the acceleration test 21 Figure 12 Concept of the reliability test in a Weibull diagram (based on sample size) . 25 Figure 13 Concept of the reliability test in a Weibull diagram (based on test t

48、ime) 28 Figure 14 Difference in sampling sizes according to the m value (image) . 29 Table 1 Examples of product categories . 9 Table 2 Cumulative failure probability 0,1 % over 10 years 106 for the third, fifth and seventh years 25 Table 3 Major reliability (life) test methods and purposes . 30 Tab

49、le 4 Examples of the number of test samples and the test time in typical reliability (life) test methods 31 Table 5 LTPD sampling table for acceptance number Ac = 0 33 Table 6 Major reliability (strength) test methods and purposes . 33 Table 7 Supplementary tests 34 Table 8 Accelerating factors, calculation formulae and num