DLA SMD-5962-96845 REV D-2008 MICROCIRCUIT MEMORY DIGITAL CMOS 4K X 8 9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON《单片硅CMOS4Kx8 9耐辐射双端口静态随机存取.pdf

《DLA SMD-5962-96845 REV D-2008 MICROCIRCUIT MEMORY DIGITAL CMOS 4K X 8 9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON《单片硅CMOS4Kx8 9耐辐射双端口静态随机存取.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96845 REV D-2008 MICROCIRCUIT MEMORY DIGITAL CMOS 4K X 8 9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON《单片硅CMOS4Kx8 9耐辐射双端口静态随机存取.pdf（41页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DAY) APPROVED A Added Appendix B to allow for the procurement of die. - glg 00-10-13 Raymond Monnin B Changed Table I parameters; tAW, tPWE, tSCE, and tWH, all from 40 ns to 45 ns. ksr 01-02-27 Raymond Monnin C Boilerplate update and part of five year review. t

2、cr 06-02-24 Raymond Monnin D Added new footnote 3/ to Table IA and renumbered the existing footnotes. ksr 08-04-08 Robert M. Heber REV D D D D D SHEET 35 36 37 38 39 REV D D D D D D D D D D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV D D D D D

3、 D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Michael. A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMO

4、S 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-07-30 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96845 SHEET 1 OF 39 DSCC

5、FORM 2233 APR 97 5962-E235-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96845 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope.

6、This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of R

7、adiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 96845 01 M X X | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (

8、see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA lev

9、els and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Data retention Access time 01 7C138C45 4K X 8 Dual port SRAM Yes 45 ns 02 7

10、C139C45 4K X 9 Dual port SRAM Yes 45 ns 03 7C138C55 4K X 8 Dual port SRAM Yes 55 ns 04 7C139C55 4K X 9 Dual port SRAM Yes 55 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documenta

11、tion M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as

12、 follows: Outline letter Descriptive designator Terminals Package style X See figure 1 68 Pin grid array Y See figure 1 68 Quad flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Generic numbe

13、rs are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in MIL-HDBK-103 (see 6.6.2 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96845 STANDARD MICROCIRCUI

14、T DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range (VCC). -0.5 V dc to +7.0 V dc Storage temperature range -65C to +150C Short circuit output current . 90 mA Maximum power dissipat

15、ion (PD) 2.0 W Lead temperature (soldering, 10 seconds) . +260C Thermal resistance, junction-to-case (JC) . 3.3C/W 4/ Maximum junction temperature (TJ) . +175C 5/ DC input voltage range. -0.5 V dc to VCC+ 0.5 V dc 6/ DC output voltage range. -0.5 V dc to VCC+ 0.5 V dc 6/ Output voltage applied in hi

16、gh Z state -0.5 V dc to VCC+ 0.5 V dc 1.4 Recommended operating conditions. Supply voltage range (VCC). 4.5 V dc minimum to 5.5 V dc maximum High level input voltage range (VIH) 0.7 VCCto 6.0 V dc Low level input voltage range (VIL) . -0.5 V dc to +0.3 VCCCase operating temperature range (TC) . -55C

17、 to +125C 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, method 5012) . 100 percent 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form

18、a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE S

19、TANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are availa

20、ble online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operati

21、on at the maximum levels may degrade performance and affect reliability. 3/ All voltages referenced to GND unless otherwise specified. 4/ Measured per MIL-STD-883, Method 1012, infinite heat sink. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in scree

22、ning conditions in accordance with method 5004 of MIL-STD-883. 6/ Negative undershoots to a minimum of -3.0 V are allowed with a maximum of 20 ns pulse width. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96845 STANDARD MICROCIRCUIT DRA

23、WING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of

24、 the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phenomena Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be address

25、ed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 W

26、ilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Ord

27、er of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 I

28、tem requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as desc

29、ribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifie

30、d in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table.

31、 The truth table shall be as specified on figure 3. 3.2.4 AC test circuit and waveforms. The ac test circuit and waveforms shall be as specified on figure 4. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 5. 3.2.6 Functional tests. Various functional

32、 tests used to test this device are contained in the appendix. If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revisio

33、n level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For device classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be m

34、ade available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall

35、 apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96845 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 AP

36、R 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also b

37、e marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall

38、be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M s

39、hall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certi

40、ficate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer

41、s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for devic

42、e class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required f

43、or any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onsh

44、ore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and ins

45、pection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in ac

46、cordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with metho

47、d 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and su

48、bstitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. For device class M, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015