DLA SMD-5962-95694 REV D-2006 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS MULTIPLEXER DEMULTIPLEXER WITH ACTIVE OVERVOLTAGE PROTECTION MONOLITHIC SILICON《抗辐射互补金属氧化物半导体超电压多路器或信号分离器硅.pdf

《DLA SMD-5962-95694 REV D-2006 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS MULTIPLEXER DEMULTIPLEXER WITH ACTIVE OVERVOLTAGE PROTECTION MONOLITHIC SILICON《抗辐射互补金属氧化物半导体超电压多路器或信号分离器硅.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95694 REV D-2006 MICROCIRCUIT LINEAR RADIATION HARDENED CMOS MULTIPLEXER DEMULTIPLEXER WITH ACTIVE OVERVOLTAGE PROTECTION MONOLITHIC SILICON《抗辐射互补金属氧化物半导体超电压多路器或信号分离器硅.pdf（17页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to input leakage current test, overvoltage protected test, positive supply current test, negative supply current test, and break-before-make time delay test as specified in table I herein. - ro 98-12-15 Raymond Monnin B Make changes t

2、o the descriptive designator under 1.2.4. Change ratings values under 1.3. Editorial changes throughout. -lgt 99-06-15 Raymond Monnin C Make changes to figure 3 timing diagrams. -rrp 00-06-29 Raymond Monnin D Update drawing to current requirements. Delete paragraphs 4.4.4.2 and 4.4.4.3. Editorial ch

3、anges throughout. - drw 06-07-28 Raymond Monnin REV SHET REV D D SHET 15 16 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandra Rooney DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, O

4、HIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RADIATION HARDENED CMOS, MULTIPLEXER / DEMULTIPLEXER WITH AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-02-27 ACTIVE OVERVOLTAGE PROTECTIO

5、N, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95694 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E571-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95694 DEFENSE SUPPLY CENTER C

6、OLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes a

7、re available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 95694 01 V E A Federal stock class designator RHA designator (see 1.2.

8、1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device clas

9、s M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 HS54

10、8RH Radiation hardened DI CMOS single 8-channel MUX / DEMUX with active overvoltage protection 02 HS549RH Radiation hardened DI CMOS single 4-channel MUX / DEMUX with active overvoltage protection 1.2.3 Device class designator. The device class designator is a single letter identifying the product a

11、ssurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case out

12、line. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for d

13、evice class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95694 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Su

14、pply voltage between +V and -V +44 V Supply voltage between +V and ground +22 V Supply voltage between -V and ground . -25 V Digital input voltage range +VEN, +VA+VSUPPLY+ 4 V -VEN, -VA. -VSUPPLY- 4 V Analog input voltage range +VS+VSUPPLY+ 20 V -VS. -VSUPPLY- 20 V Peak current, S or D (pulsed at 1

15、ms, 10 percent duty cycle maximum) . 40 mA Storage temperature range -65C to +150C Maximum power dissipation at TA= +125C (PD) . 0.63 W 2/ Thermal resistance, junction-to-case (JC) . 24C/W Thermal resistance, junction-to-ambient (JA) 80C/W Lead temperature (soldering, 10 seconds) +300C Junction temp

16、erature (TJ) +175C 1.4 Recommended operating conditions. Operating supply voltage (VSUPPLY) 15 V Analog input voltage (VS) . VSUPPLYLogic low level (VAL) . 0 V to 0.8 V Logic high level (VAH) . +4 V to +VSUPPLYMaximum RMS current, S or D 8 mA Ambient operating temperature range (TA) -55C to +125C 1.

17、5 Radiation features. Maximum total dose available (dose rate = 50-300 rads (Si)/s) 10 Krads (Si) Latch-up 3/ . None 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specifi

18、ed herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard

19、Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package d

20、issipation capacity, provide heat sinking or derate linearly ( the derating is based on JA) at 12.5 mW/C for case outline E. 3/ Guaranteed by process or design, not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

21、 SIZE A 5962-95694 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available on

22、line at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited he

23、rein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

24、 MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-385

25、35, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for devi

26、ce class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation e

27、xposure circuit shall be as specified on table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the

28、 full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addit

29、ion, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Mark

30、ing for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The

31、 compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1

32、 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawi

33、ng shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes

34、Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95694 DE

35、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C -V = -15 V, +V = +15 V Group A subgroups Device type Limits Unit VEN= 4.0 V unless otherwise specified Min Max I

36、nput leakage current 1/ IIHMeasure inputs sequentially, connect all unused inputs to 1, 2, 3 01, 02 -1.0 1.0 A IILGND -1.0 1.0 IIH, IILM, D 2/ 1 -1.0 1.0 Leakage current into the source terminal of an +IS(OFF)VS= +10 V, VEN= 0.8 V, all unused inputs = -10 V, 1 01, 02 -10 +10 nA “OFF” switch VD= -10

37、V 2, 3 -50 +50 VEN= 0.5 V, M, D 2/ 1 -50 +50 -IS(OFF)VS= -10 V, VEN= 0.8 V, all unused inputs = +10 V, 1 01, 02 -10 +10 VD= +10 V 2, 3 -50 +50 VEN= 0.5 V, M, D 2/ 1 -50 +50 Leakage current into the drain terminal of an +ID(OFF)VD= +10 V, VEN= 0.8 V, all unused inputs = -10 V 1 01, 02 -10 +10 nA “OFF

38、” switch 2, 3 01 -200 +200 02 -100 +100 VEN= 0.5 V, M, D 2/ 1 01 -200 +200 02 -100 +100 -ID(OFF)VD= -10 V, VEN= 0.8 V, all unused inputs = +10 V 1 01, 02 -10 +10 nA 2, 3 01 -200 +200 02 -100 +100 VEN= 0.5 V, M, D 2/ 1 01 -200 +200 02 -100 +100 See footnotes at end of table. Provided by IHSNot for Re

39、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95694 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics continued. Test Symbol Cond

40、itions -55C TA +125C -V = -15 V, +V = +15 V Group A subgroups Device type Limits Unit VEN= 4.0 V unless otherwise specified Min Max Leakage current from an “ON” driver into the +ID(ON)VD= +10 V, VS= +10 V, all unused inputs = -10 V 1 01, 02 -10 +10 nA switch (drain) 2, 3 01 -200 +200 02 -100 +100 VE

41、N= 4.5 V, M, D 2/ 1 01 -200 +200 02 -100 +100 -ID(ON)VD= -10 V, VS= -10 V, all unused inputs = +10 V 1 01, 02 -10 +10 nA 2, 3 01 -200 +200 02 -100 +100 VEN= 4.5 V, M, D 2/ 1 01 -200 +200 02 -100 +100 Overvoltage protected, leakage current into the +ID(OFF)VS= 33 V, VD= 0 V, VEN= 0.8 V 1, 2, 3 01, 02

42、 -2.0 +2.0 A drain terminal of an “ON” switch Over-voltage VEN= 0.5 V, M, D 2/ 1 -5.0 +5.0 -ID(OFF)VS= -33 V, VD= 0 V, VEN= 0.8 V 1, 2, 3 01, 02 -2.0 +2.0 A Over-voltage VEN= 0.5 V, M, D 2/ 1 -5.0 +5.0 Positive supply current +I VA= 0 V, VEN= 4.0 V 1, 2, 3 01, 02 2.0 mA VEN= 4.5 V, M, D 2/ 1 2.0 Neg

43、ative supply current -I VA= 0 V, VEN= 4.0 V 1, 2, 3 01, 02 -1.0 mA VEN= 4.5 V, M, D 2/ 1 -1.0 Standby positive supply current +ISBYVA= 0 V, VEN= 0 V 1, 2, 3 01, 02 2.0 mA M, D 2/ 1 2.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

44、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95694 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics continued. Test Symbol Conditions -55C TA +125C -V = -15 V, +V = +15 V Group A subgrou

45、ps Device type Limits Unit VEN= 4.0 V unless otherwise specified Min Max Standby negative supply current -ISBYVA= 0 V, VEN= 0 V 1, 2, 3 01, 02 -1.0 mA M, D 2/ 1 -1.0 Switch “ON” resistance +RDS1VS= 10 V, ID= -100 A 1 01, 02 1500 2, 3 1800 VEN= 4.5 V, M, D 2/ 1 1800 -RDS1VS= -10 V, ID= +100 A 1 01, 0

46、2 1500 2, 3 1800 VEN= 4.5 V, M, D 2/ 1 1800 Difference in switch “ON” resistance +RDS1(+RDS1MAX)-(+RDS1MIN)x100) / RDS1AVE 1 01, 02 7 % between channels VEN= 4.5 V, M, D 2/ 1 7 -RDS1(-RDS1MAX)-(-RDS1MIN)x100) / -RDS1AVE 1 01, 02 7 % VEN= 4.5 V, M, D 2/ 1 7 Logic level voltage VAL3/, 4/ 1, 2, 3 01, 0

47、2 0.8 V M, D 2/ 1 0.5 VAH3/, 4/ 1, 2, 3 01, 02 4.0 V M, D 2/ 1 4.5 Capacitance: Address CAV+ = V- = 0 V, f = 1 MHz, 5/ TA= +25C, see 4.4.1d 4 01, 02 10 pF Capacitance: Output switch COSV+ = V- = 0 V, f = 1 MHz, 5/ 4 01 45 pF TA= +25C, see 4.4.1d 02 25 Capacitance: Input switch CISV+ = V- = 0 V, f =

48、1 MHz, 5/ TA= +25C, see 4.4.1d 4 01, 02 15 pF Charge transfer error VCTEVS= GND, f = 200 kHz, 5/ VGEN= 0 V to 5 V, TA= +25C 4 01, 02 10 mV See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95694 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performanc