DLA SMD-5962-93180 REV A-2002 MICROCIRCUIT LINEAR CMOS QUAD SPDT ANALOG SWITCH MONOLITHIC SILICON《硅单片 四重单刀双投模拟开关 氧化物半导体线性微型电路》.pdf
《DLA SMD-5962-93180 REV A-2002 MICROCIRCUIT LINEAR CMOS QUAD SPDT ANALOG SWITCH MONOLITHIC SILICON《硅单片 四重单刀双投模拟开关 氧化物半导体线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-93180 REV A-2002 MICROCIRCUIT LINEAR CMOS QUAD SPDT ANALOG SWITCH MONOLITHIC SILICON《硅单片 四重单刀双投模拟开关 氧化物半导体线性微型电路》.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to reflect current requirements. -rrp 02-04-15 R. MONNIN REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUI
2、T DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, CMOS, QUAD, SPDT ANALOG SWITCH, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-
3、06-18 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93180 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E345-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA
4、RD MICROCIRCUIT DRAWING SIZE A 5962-93180 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicatio
5、n (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93180
6、 01 M R X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA level
7、s and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit fun
8、ction as follows: Device type Generic number Circuit function 01 MAX333 Quad, SPDT CMOS analog switch 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certifi
9、cation to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter D
10、escriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted
11、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93180 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ V+ to V- . 44 V dc VIN, VCOM, VNOor VNCV+ to V- |VNO VNC| . 32 V dc V+ to ground . 44
12、V dc V- to ground -44 V dc Current, any terminal except VCOM, VNO, or VNC30 mA Continuous current, VCOM, VNO, or VNC. 20 mA Peak current, VCOM, VNO, or VNC (pulsed at 1 ms, 10% duty cycle max) . 70 mA Power dissipation (PD) 2/ . 889 mW Junction temperature (TJ) . 150C Storage temperature range . -65
13、C to +150C Lead temperature (soldering, 10 sec) . +300C Thermal resistance, junction-to-case (JC) +40C/W Thermal resistance, junction-to-ambient (JA) +90C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C to +125C Supply voltage range 5.0 V dc to 15.0 V dc 2. AP
14、PLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of De
15、fense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits.
16、 MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are availabl
17、e from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Device mo
18、unted with all leads soldered to PC board. Derate 11.11 mW/C above +70C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93180 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4
19、 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been o
20、btained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the
21、form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical d
22、imensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as spe
23、cified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperat
24、ure range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may a
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