DLA SMD-5962-91528 REV B-2006 MICROCIRCUIT DIGITAL ECL OR NOR GATES MONOLITHIC SILICON《硅单块 发射极耦合逻辑或非门 数字微型电路》.pdf
《DLA SMD-5962-91528 REV B-2006 MICROCIRCUIT DIGITAL ECL OR NOR GATES MONOLITHIC SILICON《硅单块 发射极耦合逻辑或非门 数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-91528 REV B-2006 MICROCIRCUIT DIGITAL ECL OR NOR GATES MONOLITHIC SILICON《硅单块 发射极耦合逻辑或非门 数字微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R111-96. 96-04-26 Michael A. Frye B Redraw with changes. Update to current requirements. Editorial changes throughout. - gap 06-08-01 Raymond Monnin The original first page of this drawing has been replaced. RE
2、V SHET REV SHET REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Tim H. Noh DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Tim H. Noh COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY A
3、LL DEPARTMENTS APPROVED BY William K. Heckman MICROCIRCUIT, DIGITAL, ECL, OR/NOR GATES, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 91-02-05 MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-91528 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E327-06 Provided by
4、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assura
5、nce class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels
6、are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91528 01 M X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA des
7、ignator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-)
8、indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 100301 Triple 5-input OR/NOR gate 02 100302 Quint 2-input OR/NOR gate 1.2.3 Device class designator. The device class designator is a single l
9、etter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification
10、to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP5-T24 or CDIP6-T24 24 dual-in-line Y See figure 1 24 quad flat pack 1.2.5 Lead finish. The lead finish is as specified in
11、MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISIO
12、N LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Negative supply voltage range (VEE) -7.0 V dc to +0.5 V dc DC input voltage range (VIN) VEEto +0.5 V Maximum dc output current (IOUT) -50 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) . +30
13、0C Junction temperature (TJ) +175C Maximum power dissipation (PD): Device type 01 304 mW Device type 02 453 mW Thermal resistance, junction-to-case (JC): Case X See MIL-STD-1835 Case Y 28C/W 1.4 Recommended operating conditions. Negative supply voltage range (VEE) -5.7 V minimum to -4.2 V maximum Ca
14、se operating temperature range (TC) . -55C to +125C High level input voltage range (VIH) -1.165 V minimum to -0.870 V maximum Low level input voltage range (VIL) . -1.830 V minimum to -1.475 V maximum 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following speci
15、fication, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Sp
16、ecification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawing
17、s. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of
18、this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the devi
19、ce. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVI
20、SION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in
21、 the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The de
22、sign, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connec
23、tions. The terminal connections shall be as specified on figure 2. 3.2.3 Truth tables. The truth tables shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics an
24、d postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table
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