DLA SMD-5962-90620 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 2K X 8-DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON《硅单片 2K X 8双口静态随机存取存储器 氧化物半导体数字记忆微型电路》.pdf

《DLA SMD-5962-90620 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 2K X 8-DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON《硅单片 2K X 8双口静态随机存取存储器 氧化物半导体数字记忆微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90620 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 2K X 8-DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON《硅单片 2K X 8双口静态随机存取存储器 氧化物半导体数字记忆微型电路》.pdf（31页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update and part of five year review. tcr 07-04-04 Robert M. Heber REV SHET REV A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5

2、6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITA

3、L, CMOS, 2K X 8-DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-03-11 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90620 SHEET 1 OF 30 DSCC FORM 2233 APR 97 5962-E199-07 Provided by IHSNot for ResaleNo repro

4、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consistin

5、g of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

6、1.2 PIN. The PIN is as shown in the following example: 5962 - 90620 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q

7、and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device

8、. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 7C132 2K X 8 Dual port SRAM, MASTER 55 ns 02 7C132 2K X 8 Dual port SRAM, MASTER 45 ns 03 7C132 2K X 8 Dual port SRAM, MASTER 35 ns 04 7C142 2K X 8 Dual por

9、t SRAM, SLAVE 55 ns 05 7C142 2K X 8 Dual port SRAM, SLAVE 45 ns 06 7C142 2K X 8 Dual port SRAM, SLAVE 35 ns 07 7C136 2K X 8 Dual port SRAM, MASTER 55 ns 08 7C136 2K X 8 Dual port SRAM, MASTER 45 ns 09 7C136 2K X 8 Dual port SRAM, MASTER 35 ns 10 7C146 2K X 8 Dual port SRAM, SLAVE 55 ns 11 7C146 2K X

10、 8 Dual port SRAM, SLAVE 45 ns 12 7C146 2K X 8 Dual port SRAM, SLAVE 35 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements

11、for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Termi

12、nals Package style X CQCC1-N52 52 Square leadless chip carrier Y GDIP1-T48 or CDIP2-T48 48 Dual-in-line Z See figure 1 48 Square leadless chip carrier U See figure 1 48 Flat pack Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D

13、RAWING SIZE A 5962-90620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum rating

14、s. 1/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC voltage range applied to outputs in high Z state -0.5 V dc to +7.0 V dc DC Input voltage range . -3.0 V dc to +7.0 V dc DC output current 20 mA Maximum power dissipation 1/. 1.0 W Lead temperature (soldering, 10 seconds) +260C Thermal resi

15、stance, junction-to-case (JC): Cases X and Y. See MIL-STD-1835 Cases Z and U . 10C/W 2/ Junction temperature (TJ) +175C Storage temperature range . -65C to +150C Temperature under bias range -55C to +125C 1.4 Recommended operating conditions. Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Groun

16、d voltage (GND) 0 V dc Input high voltage range (VIH) . 2.2 V dc to VCC+ 0.5 V dc Input low voltage range (VIL) 3/ -0.5 V dc to 0.8 V dc Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, st

17、andards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification

18、for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

19、performance and affect reliability. 2/ When a thermal resistance for this case is specified in MIL-STD-1835 that value shall supersede the value indicated herein. 3/ Negative undershoots to a minimum of -3.0 V are allowed with a maximum of 20 ns pulse width. Provided by IHSNot for ResaleNo reproduct

20、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-

21、HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publica

22、tions. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for

23、 the Measurement of Single Event Phenomena (SEP) induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS

24、 INDUSTRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available fro

25、m the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing

26、 takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specifie

27、d herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN cla

28、ss level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline

29、s. The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

30、 5962-90620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle pro

31、tection only. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-38535) shall be subjected to and pass the internal moisture content test at 5000 ppm (method 1018 of MIL-STD-883). The frequency of the internal water vapor testing shall not be decreased unless approved

32、by the preparing activity for class M. The TRB will ascertain the requirements as provided by MIL-PRF-38535 for classes Q and V. Samples may be pulled any time after seal. 3.2.5 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns ca

33、nnot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or ac

34、quiring activity upon request. For device classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL- PRF -38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical pe

35、rformance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requireme

36、nts. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marki

37、ng of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-3853

38、5. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-P

39、RF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be requ

40、ired from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classe

41、s Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, append

42、ix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this dr

43、awing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer.

44、 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 3.11 Serialization for device classes V. Class V shall be serialized in accordance with MIL- PRF -38535. Provided by IHSNot

45、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90620 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q an

46、d V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection proc

47、edures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) elec