DLA SMD-5962-89508-1989 MICROCIRCUIT DIGITAL FAST CMOS 1 OF 4 DECODER MONOLITHIC SILICON《硅单片1 4译码器高速互补型金属氧化物半导体线性微电路》.pdf
《DLA SMD-5962-89508-1989 MICROCIRCUIT DIGITAL FAST CMOS 1 OF 4 DECODER MONOLITHIC SILICON《硅单片1 4译码器高速互补型金属氧化物半导体线性微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89508-1989 MICROCIRCUIT DIGITAL FAST CMOS 1 OF 4 DECODER MONOLITHIC SILICON《硅单片1 4译码器高速互补型金属氧化物半导体线性微电路》.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDREVSHEETREVSHEETREV STATUSOF SHEETSREVSHET 123456789101PMIC N/APREPARED BY Monica L. Poelking DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444STANDARDIZEDMILITARYDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAND AGENCIES OF THEDEPARTMEN
2、T OF DEFENSEAMSC N/A CHECKED BYRay MonninMICROCIRCUIT, DIGITAL, FAST CMOS, 1 OF 4DECODER, MONOLITHIC SILICONAPPROVED BYMichael A. FryeDRAWING APPROVAL DATE27 APRIL 1989SIZEACAGE CODE672685962-89508REVISION LEVELSHEET 1 OF 11DESC FORM 193SEP 87 5962-E1176DISTRIBUTION STATEMENT A. Approved for public
3、release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-89508REVISION LEVEL SHEET2DESC FORM 193AJUL 911. SCOPE1.1 Scope. This drawing
4、describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883,“Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part number. The complete part number shall be as shown in the following example:5962 - 89508 01 E X G0DG0DG0DG0D
5、G0D G0D G0D G0D Drawing number Device type Case outline Lead finish per(see 1.2.1) (see 1.2.2) MIL-M-385101.2.1 Device types. The device types shall identify the circuit function as follows:Device type Generic number Circuit function01 54FCT139 Dual, 1 of 4 decoders02 54FCT139A Dual, 1 of 4 decoders
6、 1.2.2 Case outlines. The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:Outline letter Case outlineE D-2 (16-lead, .840“ x .310“ x .200“), dual-in-line packageF F-5 (16-lead, .440“ x .285“ x .085“), flat package2 C-2 (20-Terminal, .358“ x .358“ x .100“), square ch
7、ip carrier package 1.3 Absolute maximum ratings. 1/Supply voltage range . -0.5 V dc to +7.0 V dcInput voltage range -0.5 V dc to V + 0.5 V dcCCOutput voltage range . -0.5 V dc to V + 0.5 V dcCCDC input diode current (I ) -20 mAIKDC output diode current (I ) -50 mAOKDC output current . 100 mAMaximum
8、power dissipation (P ) 2/ 500 mWDThermal resistance, junction-to-case (G14 ) . See MIL-M-38510, appendix CJCStorage temperature range -65G28C to +150G28CJunction temperature (T ) . +175G28CJLead temperature (soldering, 10 seconds) +300G28C1/ All voltages referenced to GND.2/ Must withstand the added
9、 P due to short circuit test, e.g., I .DOSProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-89508REVISION LEVEL SHEET3DESC FORM 193AJUL 911.4 Recommended operating
10、 conditions. Supply voltage range (V ) . +4.5 V dc to +5.5 V dcCCMaximum low level input voltage (V ) . 0.8 V dcILMinimum high level input voltage (V ) . 2.0 V dcIHCase operating temperature range (T ) -55G28C to +125G28CC2. APPLICABLE DOCUMENTS2.1 Government specification and standard. Unless other
11、wise specified, the following specification and standard, of the issuelisted in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.SPECIFICATIONSMILITARYMIL-M-38510 - Microcircuits, G
12、eneral Specification for.STANDARDSMILITARYMIL-STD-883 - Test Methods and Procedures for Microelectronics.(Copies of the specification and standard required by manufacturers in connection with specific acquisition functions should beobtained from the contracting activity or as directed by the contrac
13、ting activity.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing shall take precedence.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device class M shall be in accordance with 1.2
14、.1 of MIL-STD-883,“Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified inMIL-M-38510 and herein.3.2.1 Terminal connectio
15、ns. The terminal connections shall be as specified on figure 1.3.2.2 Truth table. The truth table shall be as specified on figure 2.3.2.3 Test circuit and switching waveforms . The switching waveforms and test circuit shall be as specified on figure 3.3.2.4 Case outlines. The case outlines shall be
16、in accordance with 1.2.2 herein.3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are asspecified in table I and apply over the full case operating temperature range. 3.4 Marking. Marking shall be in accordance with MIL-STD-883
17、(see 3.1 herein). The part shall be marked with the partnumber listed in 1.2 herein. In addition, the manufacturers part number may also be marked as listed in 6.4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDE
18、FENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-89508REVISION LEVEL SHEET4DESC FORM 193AJUL 91TABLE I. Electrical performance characteristics.Test Symbol Conditions-55G28C G06 T G06 +125G28CCV = 5.0 V dc 10%CCunless otherwise specifiedGroup AsubgroupsDevicetypeLimits UnitMin MaxHigh level
19、 output voltage VOHV = 4.5 V,CCV = 0.8 VILV = 2.0 VIHI = -300 G29AO1, 2, 3 All 4.3 VI = -12 mAO1, 2, 3 All 2.4Low level output voltage VOLV = 4.5 V, CCV = 0.8 VILV = 2.0 VIHI = 300 G29AO1, 2, 3 All 0.2I = 32 mAO1, 2, 3 All 0.5Input clamp voltage VIKV = 4.5 V, I = -18 mACC IN1Al -1.2High level input
20、current IIHV = 5.5 V, V = 5.5 VCC IN1, 2, 3 All 5.0 G29ALow level input current IILV = 5.5 V, V = GNDCC IN1, 2, 3 All -5.0Short circuit output current IOSV = 5.5 V , V = 0.0 V 1/ CC OUT1, 2, 3 All -60 mAQuiescent power supply current(CMOS inputs)ICCQV G06 0.2 V or V G07 5.3 V,IN INV 5.5 V, f = 0 MHz
21、CC I 1, 2, 3 All 1.5Quiescent power supply current(TTL inputs)deltaICCV = 5.5 V, V = 3.4 V 2/CC IN1, 2, 3 All 2.0Dynamic power supplycurrentICCDV = 5.5 V, OE = GNDCCV G07 5.3 V or V G06 0.2 V ,IN INOutputs open,One bit togglin - 50% duty cycle3/Al 0.3mA/MHzSee footnotes at end of table.Provided by I
22、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-89508REVISION LEVEL SHEET5DESC FORM 193AJUL 91TABLE I. Electrical performance characteristics - Continued.Test Symbol Conditio
23、ns-55G28C G06 T G06 +125G28CCV = 5.0 V dc 10%CCunless otherwise specifiedGroup AsubgroupsDevicetypeLimits UnitMin MaxTotal power supplycurrent 4/ICCV G07 5.3 V or V G06 0.2 V ,IN INV = 5.5 V, f = 10 Mhz,CC IOutputs open, One bit toggling- 50% duty cycle1, 2, 3 All 4.5 mAV = 3.4 V or V = GNDIN INV =
24、5.5 V, f = 10 Mhz,CC IOutrputs open, OE = GNDOne bit toggling, 50% duty cycle5.5Functional tests See 4.3.1d 7, 8 AllInput capacitance CINSee 4.3.1c 4 All 10 pFOutput capacitance COUTSee 4.3.1c 4 All 12Propagation delay time,A , A , to O01 nt, PLHtPHLR = 500G36LC = 50 pFLSee figure 35/ 9, 10, 11 01 1
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