DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf
《DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf(9页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make correction to the HFEtest as specified under table I. - ro 02-06-25 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY C
2、HARLES E. BESORE DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAY MONNIN COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH CURRENT, NPN TRANSISTOR ARRAY, MONOLITHIC SILICO
3、N AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-01-13 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-88664 SHEET 1 OF 8 DSCC FORM 2233 APR 97 5962-E454-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo repr
4、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 complia
5、nt, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88664 01 E X Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device ty
6、pe(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 SG3081 High current NPN transistor array 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Pac
7、kage style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. 1/ Collector-to-emitter voltage (VCEO) 16 V dc Collector-to-base voltage (VCBO) . 20 V dc Collector-to-substrate voltage (VCSO) 20 V dc E
8、mitter-to-base voltage (VEBO) 5.0 V dc Collector current (IC) 100 mA Base emitter (IB) . 20 mA Power dissipation (PD): Any one transistor . 500 mW Total package . 750 mW 2/ Junction temperature (TJ) +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal
9、resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C _ 1/ Voltage and current ratings applies to each transistor in the array. 2/ Derate above TA= +25C at 6.67 mW/C. Provided by IHSNot for ResaleNo reproductio
10、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following
11、 specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in th
12、e solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTM
13、ENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philade
14、lphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been o
15、btained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qua
16、lified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Qual
17、ity Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to i
18、dentify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.2.2 Terminal
19、connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electr
20、ical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE
21、 A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Collector-to-bas
22、e breakdown voltage BVCBOIC= 500 A, IE= 0 mA 1,2,3 01 20 V Collector-to-emitter breakdown voltage BVCEOIC= 500 A, IB= 0 mA 1,2,3 01 16 V Collector-to-substrate breakdown voltage BVCSOIC= 500 A, IE= 0 mA, IB= 0 mA 1,2,3 01 20 V Emitter-to-base breakdown voltage BVEBOIC= 500 A 1,2,3 01 5.0 V DC forwar
23、d current transfer ratio HFEVCE= 5.0 V, IC= 30 mA, TA= +25C 1 01 50 VCE= 5.0 V, IC= 50 mA, TA= +25C 40 Base-to-emitter saturation voltage VBE(sat) IC= 30 mA, IB= 1.0 mA 1 01 1.0 V 2,3 1.2 Collector-to-emitter saturation voltage VCE(sat) IC= 30 mA, IB= 1.0 mA 1 01 0.5 V 2,3 0.9 IC= 50 mA, IB= 5.0 mA
24、1 0.7 2,3 1.1 Collector cutoff current ICEOVCE= 10 V, IB= 0 mA 1 01 10 A 2,3 70 VCB= 10 V, IE= 0 mA 1,2,3 6.0 1/ Parameters apply to each transistor in the array. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59
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