欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf

    • 资源ID:699315       资源大小:47.43KB        全文页数:9页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make correction to the HFEtest as specified under table I. - ro 02-06-25 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY C

    2、HARLES E. BESORE DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAY MONNIN COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH CURRENT, NPN TRANSISTOR ARRAY, MONOLITHIC SILICO

    3、N AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-01-13 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-88664 SHEET 1 OF 8 DSCC FORM 2233 APR 97 5962-E454-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo repr

    4、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 complia

    5、nt, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88664 01 E X Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device ty

    6、pe(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 SG3081 High current NPN transistor array 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Pac

    7、kage style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. 1/ Collector-to-emitter voltage (VCEO) 16 V dc Collector-to-base voltage (VCBO) . 20 V dc Collector-to-substrate voltage (VCSO) 20 V dc E

    8、mitter-to-base voltage (VEBO) 5.0 V dc Collector current (IC) 100 mA Base emitter (IB) . 20 mA Power dissipation (PD): Any one transistor . 500 mW Total package . 750 mW 2/ Junction temperature (TJ) +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal

    9、resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C _ 1/ Voltage and current ratings applies to each transistor in the array. 2/ Derate above TA= +25C at 6.67 mW/C. Provided by IHSNot for ResaleNo reproductio

    10、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following

    11、 specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in th

    12、e solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTM

    13、ENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philade

    14、lphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been o

    15、btained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qua

    16、lified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Qual

    17、ity Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to i

    18、dentify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.2.2 Terminal

    19、connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electr

    20、ical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

    21、 A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Collector-to-bas

    22、e breakdown voltage BVCBOIC= 500 A, IE= 0 mA 1,2,3 01 20 V Collector-to-emitter breakdown voltage BVCEOIC= 500 A, IB= 0 mA 1,2,3 01 16 V Collector-to-substrate breakdown voltage BVCSOIC= 500 A, IE= 0 mA, IB= 0 mA 1,2,3 01 20 V Emitter-to-base breakdown voltage BVEBOIC= 500 A 1,2,3 01 5.0 V DC forwar

    23、d current transfer ratio HFEVCE= 5.0 V, IC= 30 mA, TA= +25C 1 01 50 VCE= 5.0 V, IC= 50 mA, TA= +25C 40 Base-to-emitter saturation voltage VBE(sat) IC= 30 mA, IB= 1.0 mA 1 01 1.0 V 2,3 1.2 Collector-to-emitter saturation voltage VCE(sat) IC= 30 mA, IB= 1.0 mA 1 01 0.5 V 2,3 0.9 IC= 50 mA, IB= 5.0 mA

    24、1 0.7 2,3 1.1 Collector cutoff current ICEOVCE= 10 V, IB= 0 mA 1 01 10 A 2,3 70 VCB= 10 V, IE= 0 mA 1,2,3 6.0 1/ Parameters apply to each transistor in the array. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

    25、62-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 Device type 01 Case outline E Terminal number Terminal symbol 1 COLLECTOR 1 2 COLLECTOR 2 3 BASE 2 4 COLLECTOR 3 5 SUBSTRATE (see note 1 ) 6 BASE 3 7 COLLECTOR 4 8 BASE 4 9 COLLECTOR 5 10

    26、 BASE 5 11 BASE 6 12 COLLECTOR 6 13 BASE 7 14 COLLECTOR 7 15 EMITTER (see note 2) 16 BASE 1 NOTES: 1. The substrate pin must be connected to the most negative dc potential, which should also be a good ac ground, for proper isolation between transistors. 2. The emitter is common to all seven transist

    27、ors in the array. FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97

    28、3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For packages where marking of the entire SMD PIN number is not fea

    29、sible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be rep

    30、laced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6

    31、herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as re

    32、quired in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required in accordance with MIL-PRF-38535, appendix A. 3.9 Verification and review. DSCC, DSCCs agent, and the acquir

    33、ing activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection procedures shall be in

    34、 accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1)

    35、Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicab

    36、le, in accordance with the intent specified in test method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufactu

    37、rer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply. 4.3.1 Group A inspection. a. Tests shall be as specified in table II herein. b. S

    38、ubgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 RE

    39、VISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE II. Electrical test requirements. MIL-STD-883 test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Interim electrical parameters (method 5004) 1 Final electrical test parameters (method 5004) 1*,2,3 Group A test require

    40、ments (method 5005) 1,2,3 Groups C and D end-point electrical parameters (method 5005) 1 * PDA applies to subgroup 1. 4.3.2 Groups C and D inspections. a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test conditions, method 1005 of MIL-STD-883. (1) T

    41、est condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicabl

    42、e, in accordance with the intent specified in test method 1005 of MIL-STD-883. (2) TA= +125C, minimum. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535,

    43、 appendix A. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic de

    44、vice covered by a contractor-prepared specification or drawing. 6.3 Configuration control of SMDs. All proposed changes to existing SMDs will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

    45、6.4 Record of users. Military and industrial users shall inform Defense Supply Center Columbus when a system application requires configuration control and the applicable SMD. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings

    46、. Users of drawings covering microelectronics devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

    47、, OHIO 43216-5000 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 6.5 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone (614) 692-0547. 6.6 Approved sources of supply. Approved sources of supply are listed in MIL-HDBK-103. The vendors listed in

    48、MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 02-06-25 Approved sources of supply for SMD 5962-88664 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have ag


    注意事项

    本文(DLA SMD-5962-88664 REV A-2002 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片NPN晶体管阵列高电流线性微电路》.pdf)为本站会员(eastlab115)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开