DLA SMD-5962-88534 REV C-2008 MICROCIRCUIT DIGITAL ADVANCED CMOS DUAL J-K FLIP-FLOP WITH SET AND CLEAR TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-88534 REV C-2008 MICROCIRCUIT DIGITAL ADVANCED CMOS DUAL J-K FLIP-FLOP WITH SET AND CLEAR TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88534 REV C-2008 MICROCIRCUIT DIGITAL ADVANCED CMOS DUAL J-K FLIP-FLOP WITH SET AND CLEAR TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(17页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class V criteria. Add RHA data. Editorial changes throughout. -jak 98-02-04 Thomas M. Hess B Add vendor CAGE F8859. Add case outline X. Add table III, delta limits. Update boilerplate to MIL-PRF-38535 requirements. - jak. 01-07-13 Thom
2、as M. Hess C Update boilerplate to MIL-PRF-38535 requirements. - LTG 08-05-15 Thomas M. Hess REV SHET REV C C SHET 15 16 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg A. Pitz DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT
3、DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-02-12 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL J-K FLIP-FLOP WITH SE
4、T AND CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-88534 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E349-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5
5、962-88534 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of
6、case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 R 88534 01
7、E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 88534 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCa
8、se outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appe
9、ndix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT109 Dual J-K positive edge-triggered flip-flop
10、 with TTL compatible inputs 02 54ACT11109 Dual J-K positive edge-triggered flip-flop with TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added afte
11、r the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircu
12、its in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88534 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432
13、18-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP3-F16
14、 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input
15、voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current. 20 mA DC output current (per pin) 50 mA DC VCCor GND current (per pin) . 100 mA Maximum power dissipation (PD) . 500 mW Storage temperature range (TSTG) . -65C to +150C Le
16、ad temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) 4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOU
17、T). +0.0 V dc to VCCCase operating temperature range (TC). -55C to +125C Input rise or fall times (VCC= 4.5 V to 5.5 V) 0 to 8 ns/V Minimum setup time, Jn or Kn to CPn, (ts): TC= -55C and +125C, VCC= 4.5 V . 5.5 ns Minimum removal time, CDn or SDn to CPn, (trem): TC= -55C and +125C, VCC= 4.5 V 0.5 n
18、s Minimum pulse width CPn (tpw): TC= -55C and +125C, VCC= 4.5 V 5.0 ns Minimum pulse width CDn or SDn (tpw): TC= +25C, VCC = 4.5 V . 6.5 ns TC= -55C and +125C, VCC= 4.5 V 7.0 ns Minimum hold time, Jn or Kn to CPn (th): TC= -55C and +125C, VCC= 4.5 V 2.0 ns Maximum frequency, (fmax): TC= +25C, VCC =
19、4.5 V . 95 MHz TC= -55C and +125C, VCC= 4.5 V 85 MHz 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The
20、limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. P
21、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88534 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose availabl
22、e (dose rate = 50 300 rads(Si)/s) 100k rads(Si) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents
23、are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component
24、 Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Doc
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