DLA SMD-5962-88533 REV C-1994 MICROCIRCUIT DIGITAL CMOS ERROR DETECTION AND CORRECTION UNIT MONOLITHIC SILICON《硅单片误差检测与校正的单位互补型金属氧化物半导体数字微电路》.pdf
《DLA SMD-5962-88533 REV C-1994 MICROCIRCUIT DIGITAL CMOS ERROR DETECTION AND CORRECTION UNIT MONOLITHIC SILICON《硅单片误差检测与校正的单位互补型金属氧化物半导体数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88533 REV C-1994 MICROCIRCUIT DIGITAL CMOS ERROR DETECTION AND CORRECTION UNIT MONOLITHIC SILICON《硅单片误差检测与校正的单位互补型金属氧化物半导体数字微电路》.pdf(25页珍藏版)》请在麦多课文档分享上搜索。
1、 SUD-5962-88533 REV C E! 9999996 0063870 bT2 m Changes in accordance with NOR 5962-R073-92 LTR 91/11/30 A REV B ccc C REVISIONS DATE (IR-HO-DA) D-ON Add evi types 03 thmugb 05 for vendar cage 34335. Alter electrical performmce characbristics . Add additional load circuit (figure 5) for device types
2、03 through 05. device type 06 for vendar cage 61772. inactivate case 2. Mitorial changes thruughout. Add 89/06/30 AM device type 07 for vendor cage 61772. Add case outline T. Bitorial changes throughout. I 94/04/20 SHEET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL
3、 DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A ISC FORM 193 JUL 91 M.A. Frye M. L. Poelkinq M, L. Poelking PREPARED BY Christopher A. Rauch DAYTON, mo 45444 CHECKED BY Ray Honnin APPROVED BY Michael A. Frye DRAWING APPROVAL DATE 2 JUNE 1988 REVISION LEVEL C MICROCIRCUIT, DIGITAL, CM
4、OS, ERROR DETECTION AND CORRECTION UNIT, MONOLITHIC SILICON SIZE I CAGE WE I 5962-88533 A 67268 SHEET 1 OF 24 _ 5962-E400-93 . _ - DISTRIBUTION STATEMENT A. Approved for pubtic release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr
5、om IHS-,-,-SHD-5962-88533 REV C qqqq996 OOhL871 539 I 1. SCOPE 1.1 a. This drawing describes device rwirernents for class B microcircuits in accordance with 1.2.1 of 1.2 Part or Identifvins Nunber (PINl. o1 MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN dev
6、iceso8. The complete PIN shall be as shown in the following example: X - X - 5962 - 88533 - I I I I STANDARD1 ZED SI2E MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION C I I 1 1 I I Lead finish per Drawing nuber Device type Case outline (see 1.2.1) (see 1.2.2) MIL-M-3
7、8510 5962-88533 SHEET 2 1.2.1 Device twe(s1. The device type(s) shall identify the circuit function as follows: Device type Generic der Circuit function Detect time Correct time o1 49C460A 32-bit EDCU 33 ns 39 ns 02 49C460B 32-bit EDCU 28 ns 33 ns 03 29C660A 32-bit EDCU 33 ns 39 ns o4 29COB 32-bit E
8、DCU 28 ns 33 ns 05 29C660C 32-bit EDCU 21 ns 29 ns o6 49C460C 32-bit EDCU 21 ns 29 ns 07 49C460D 32-bit EDCU 16 ns 22 ns 1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter DeSCriDtiVe designator Terminals Package style CMGA3 - 68 See figu
9、re 1 CPCC1 -N84 See figure 2 See figure 3 68 68 68 68 68 1.3 Absolute maximun ratinss. I/ Voltage on any pin relative to ground . DC output current into outputs Storage temperature range . Maximun power dissipation (PD) lead temperature (soldering, 10 seconds) Thermal resistance, junction-to-case (O
10、Jc): Cases U and Y . Case X Case 2 Case T Junction tenperature (TJ) 1.4 Recomnended oDeratina conditions. Supply voltage range (Vcc) . Minimm input high voltage (VI ) . Maximm input tow voltage vILj Case operating temperature range (Tc) . pin grid array dual-in-line package square chip carrier squar
11、e chip carrier quad flat package -0.5 V dc to +7.0 V dc z/ 30 mA -65C to +150C 1.0 u I/ y +30Ooc See MIL-STD-1835 38“C/U s/ 35“C/V s/ 2O0C/W +150“C 4.5 V dc to 5.5 V dc 2.0 V dc 0.8 V dc -55OC to +125c - 1/ Stresses greater than those listed may cause permanent damage to the device. - 2/ VIL minimm
12、= -3.0 V for pulse width less than 20 ns. 3/ Raximm power dissipation can only be achieved by excessive I %/ Must withstand the added PD due to short circuit test; e.g., PL . - 5/ Uhen a thermal resistance value for this case is included in My?-STD-1835, that value or IO“. shall supersede the value
13、indicated herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-7 SMD-5b2-533 REV C E?! b 0061872 475 2. APPLICABLE DDCUIIENTS 2.1 Goverrment specification. standard, and bulletin. Unless otherwise specified, the following specification, standard,
14、and bulletin of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drauing to the extent specified herein. SPECIFICATION MIL I TARY Mi L-M-385 10 - Microcircuits, General Specification for. STANDARD MIL
15、ITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN Mi LI TARY NIL-BUL-103 - List of Standardized Military Drawings (SMDIS). (Copies of the specification, standard, and bulletin required by manufacturers in connection uith specifi
16、c acquisition fuictions should be obtained from the contracting activity or as directed by the contracting activity.) references cited herein, the text of this drawing shall take precedence. 2.2 Order of Precedence. In the event of a conflict betueen the text of this drawing and the 3. REPUIREMENTS
17、3.1 Item requirements. lhe individual item requirements shall be in accordance uith 1.2.1 of MIL-STD-883, lProvisions for the use of MIL-STD-883 in conjunction uith compliant non-JAN devices“ and as specified herein. 3.2 Design, construction. and Dhvsical dimensions. The design, construction, and ph
18、ysical dimensions shall be as specified in MIL-M-38510 and herein. 1, 2, and 3. 3.2.1 Case outline(s). The case outline(s) shall be in accordance uith 1.2.2 herein and as specified on figures 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 4. 3.2.3 3.3 Electrical
19、 performance characteristics. Unless otherwise specified herein, the electrical Block diagram. The block diagram shall be as specified on figure 5. performance characteristics are as specified in table I and shall apply over the full (case or ambient) operating temperature range. specified in table
20、II. 3.0 Electrical test reauirements. The electrical test requirements shall be the subgroups The electrical tests for each subgroup are described in table i. STANDARDIZED 5962-88533 MILITARY DRAWXNO DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OBI0 45444 )ESC FDRM 193A JUL 91 Provided by IHSNot for Re
21、saleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-88533 REV C L!B 9999996 0061873 301 M TABLE I. Electrical oerformance characteristics. r Test Input high voltage Input Lou voltage Input high current Input low current Output high voltage Output low voltage Off state (
22、high impedance) output current Output short circuit current s/ Quiescent power supply current (CMOS inputs) Symbol Conditions Group A Device Limits Unit subgroups types -55C 5 T 5 +125C vcc = 4.5 e to 5.5 v unless atherwise swcifid Min Max VI, Guaranteed input logical high 1,2,3 All 2.0 V VIL Guaran
23、teed input Logical low 1,2,3 All 0.8 IIH vcc 5.5 v, VIN = 5.5 v 1,2,3 All 10 FA IIL Vcc = 5.5 V, VIN = GND l,2,3 All -10 VOH vcc = 4.5 v, Io, = -300 1,2,3 ALI V - V voltage for all inputs 2/ voltage for all inputs 2/ 05 V IN = IH Or IL io, = -12 nd 1,2,3 01,02 2.4 06.07 IoH = -8 IM 1,2,3 03,04 2.4 0
24、5 VOL vcc = 4.5 v, IoL = 300 STANDARD1 ZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REmSIONLEvEL C 5962-88533 SHEFT 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SvD-5962-88533 REV C 0 9999996 0063874 248 TABLE
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