DLA SMD-5962-86874 REV C-2006 MICROCIRCUIT DIGITAL ADVANCED SCHOTTKY TTL OCTAL BUFFER W LOW& HIGH ENABLED 3-STATE NON- INVERTED OUTPUTS MONOLITHIC SILICON《硅单块 八进制缓冲器W 高或低激活的三态非倒转输出.pdf
《DLA SMD-5962-86874 REV C-2006 MICROCIRCUIT DIGITAL ADVANCED SCHOTTKY TTL OCTAL BUFFER W LOW& HIGH ENABLED 3-STATE NON- INVERTED OUTPUTS MONOLITHIC SILICON《硅单块 八进制缓冲器W 高或低激活的三态非倒转输出.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-86874 REV C-2006 MICROCIRCUIT DIGITAL ADVANCED SCHOTTKY TTL OCTAL BUFFER W LOW& HIGH ENABLED 3-STATE NON- INVERTED OUTPUTS MONOLITHIC SILICON《硅单块 八进制缓冲器W 高或低激活的三态非倒转输出.pdf(12页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Device 01 inactive for new design. Editorial changes throughout. 87-05-19 N. A. Hauck B Device 01 reactivated for new design, due to inactivation of M38510/332. Drawing placed on new boilerplate. CAGE changed from 14933 to 67268. Editorial change
2、s throughout. 97-07-30 Raymond L. Monnin C Update to current requirements. Editorial changes throughout. - gap 06-02-14 Raymond Monnin CURRENT CAGE CODE 67268 THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6
3、 7 8 9 10 11 PMIC N/A PREPARED BY David W. Queenan DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY N. A. Hauck COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY N. A. Hauck MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTK
4、Y TTL, OCTAL BUFFER W/LOW quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
5、 of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN cl
6、ass level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance
7、with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device
8、. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall
9、be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figu
10、re 2. 3.2.4 Logic diagram(s). The logic diagram(s) shall be as specified on figure 3. 3.2.5 Test circuit and timing waveforms. The test circuit and timing waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical perfor
11、mance characteristics are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86874 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,
12、 OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-3
13、8535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the dev
14、ice. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QM
15、L flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of
16、 supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to thi
17、s drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation
18、. Offshore documentation shall be made available onshore at the option of the reviewer. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-8
19、83, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level cont
20、rol and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final e
21、lectrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D
22、RAWING SIZE A 5962-86874 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C VCCGroup A subgroups Limits Unit unless otherwise specified Min Max Input clamp volta
23、ge VICII= -18mA 4.5 V 1 -1.2 V Short circuit output current IOS 1/ 5.5 V 1, 2, 3 -100 -325 mA High level output voltage VOHIOH= -3 mA , VIN= 0.8 V or VIN= 2.0 V 4.5 V 1, 2, 3 2.4 V Low level output voltage VOLIOL= 48 mA, VIN= 0.8 V or VIN= 2.0 V 4.5 V 1, 2, 3 0.55 V High-level input current IIH1VIN=
24、 2.7 V 5.5 V 1, 2, 3 20 A IIH2VIN= 7.0 V 5.5 V 1, 2, 3 0.1 mA Low-level input current any A (at data) IIL1VIN= 0.5 V 5.5 V 1, 2, 3 -1.6 mA Low-level input enable current IIL2VIN= 0.5 V 5.5 V 1, 2, 3 -1.0 mA High level supply current ICCH 5.5 V 1, 2, 3 60 mA Low level supply current ICCL5.5 V 1, 2, 3
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