DLA MIL-PRF-19500 478 K-2012 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER FAST RECOVERY TYPES 1N5812 1N5814 1N5816 AND R VERSIONS JAN JANTX JANTXV JANHC JANKC AND JANS.pdf
《DLA MIL-PRF-19500 478 K-2012 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER FAST RECOVERY TYPES 1N5812 1N5814 1N5816 AND R VERSIONS JAN JANTX JANTXV JANHC JANKC AND JANS.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 478 K-2012 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER FAST RECOVERY TYPES 1N5812 1N5814 1N5816 AND R VERSIONS JAN JANTX JANTXV JANHC JANKC AND JANS.pdf(17页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/478K 12 December 2012 SUPERSEDING MIL-PRF-19500/478J 27 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS This specification is app
2、roved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery p
3、ower rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die. 1.2 Physical dimensions. See figure 1 (DO-4) and figures 2, 3, 4, and 5 (unencapsulated die). 1.3 Maximum ratings. Types (1) VRV
4、RWMIO(1) TC = +100C IFSMtp= 8.3 ms TC= +100C trrRJCTJand TSTG1N5812, R 1N5814, R 1N5816, R V dc 50 100 150 V (pk) 50 100 150 A dc 20 20 20 A(pk) 400 400 400 ns 35 35 35 C/W 1.5 C -65C to +175C (1) Derate linearly, 250 mA/C from +100C to +150C and 300 mA/C above +150C. AMSC N/A FSC 5961 INCH-POUND *
5、Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the AS
6、SIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 March 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 2 Dimensions N
7、otes Inches Millimeters Min Max Min Max A1.250 6.35 b .250 6.35 3 C .018 .065 0.46 1.65 CD .265 .424 6.74 10.77 CD1.265 .437 6.74 11.10 CH .300 .405 7.62 10.28 HF .424 .437 10.77 11.10 HT .075 .175 1.91 4.44 OAH .600 .800 15.24 20.32 SD 4, 6 SL .422 .453 10.72 11.50 SU .078 1.98 5 T .066 .103 1.68 2
8、.62 UD .163 .189 4.14 4.80 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. Angular orientation and contour of this terminal is undefined. 4. Pitch diameter .190-32 UNF-2A (coated) - .1697 (4.310 mm). 5. Length of incomplete or undercut threads
9、 of UD. 6. Anode for R suffix devices. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (DO-4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 3 Dimensions Symbol Inches Millimet
10、ers Min Max Min Max A .130 .133 3.30 3.37 B .114 .117 2.89 2.97 C .009 .010 0.228 0.254 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The physical characteristics of the die are: Metallization front (anode), back (cathode) consists of: Ag th
11、ickness = 3,000 minimum, NI thickness = 1,500 minimum, Cr thickness = 800 minimum. 4. Requirements in accordance with MIL-PRF-19500 (appendix E) are performed in a DO-4 package (see 6.5). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions JANC d
12、ie dimensions (A-version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 4 Dimensions Symbol Inches Millimeters Min Max Min Max A .130 .143 3.30 3.63 B .114 .133 2.89 3.37 C .009 .010 0.228 0.254 NOTES: 1. Dimensions are in inches. 2.
13、 Millimeter equivalents are given for general information only. 3. The physical characteristics of the die are: Metallization front (anode), back (cathode) consists of: Ag thickness = 3,000 minimum, NI thickness = 1,500 minimum, Cr thickness = 800 minimum, optionally Ti thickness = 300 minimum. 4. R
14、equirements in accordance with MIL-PRF-19500 (appendix H) are performed in a DO-4 package (see 6.5). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions JANC die dimensions (B-version). Provided by IHSNot for Resale-,-,-MIL-PRF-19500/478K 5 Dimen
15、sions Symbol Inches Millimeters Min Max Min Max A .152 .156 3.86 3.96 B .126 .130 3.20 3.30 C .008 .012 0.203 0.31 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The physical characteristics of the die are: Metallization (front (anode), consi
16、sts of: AL thickness = 60,000 minimum, (back, (cathode) consists of: AU thickness = 2,500 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensions JANC (JANHC and JANKC) die dimensions (C-version). Provided by IHSNot for Resale-,-,-MIL-PRF-19
17、500/478K 6 Dimensions Symbol Inches Millimeters Min Max Min Max A .136 .142 3.45 3.61 B .117 .123 2.97 3.12 C .007 .013 0.18 0.33 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The metallization consists of: D version: front (anode) - aluminu
18、m; back (cathode) - gold. E version: front (anode) - aluminum; back (cathode) - silver. F version: front (anode) - silver; back (cathode) - silver. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. Physical dimensions JANC (JANHC and JANKC) die dimensions (D, E, a
19、nd F - versions). Provided by IHSNot for Resale-,-,-MIL-PRF-19500/478K 7 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or reco
20、mmended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.
21、2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPAR
22、TMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil.or
23、from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this doc
24、ument takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLAMILPRF19500478K2012SEMICONDUCTORDEVICEDIODESILICONPOWERRECTIFIERFASTRECOVERYTYPES1N58121N58141N5816ANDRVERSIONSJANJANTXJANTXVJANHCJANKCANDJANSPDF

链接地址:http://www.mydoc123.com/p-692352.html