DLA MIL-PRF-19500 477 K-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRAFAST RECOVERY POWER RECTIFIER TYPES 1N5802 1N5804 1N5806 1N5807 1N5809 AND 1N5811 1N5802US 1N5804US 1N5806US 1N .pdf

《DLA MIL-PRF-19500 477 K-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRAFAST RECOVERY POWER RECTIFIER TYPES 1N5802 1N5804 1N5806 1N5807 1N5809 AND 1N5811 1N5802US 1N5804US 1N5806US 1N .pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 477 K-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRAFAST RECOVERY POWER RECTIFIER TYPES 1N5802 1N5804 1N5806 1N5807 1N5809 AND 1N5811 1N5802US 1N5804US 1N5806US 1N .pdf（35页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/477K 9 July 2012 SUPERSEDING MIL-PRF-19500/477J 14 November 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1

2、N5811US, 1N5802URS, 1N5804URS, 1N5806URS, 1N5807URS, 1N5809URS, AND 1N5811URS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of

3、this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of pro

4、duct assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figures 1 through 4. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. 1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). TSTG= TJ(max)= -65C to +175C. 1.3.2 Ratings applicable to i

5、ndividual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Col. 8 Col. 9 Types VRWMIO(L)TL= +75C L = .375 in. (9.52 mm) (1) (2) (3) IO1TA= +55C (4) (5) (6) IFSMat +25C operating at IO1tp= 8.3 ms trrRJLat L = .375 in. (9.52 mm) RJEC(7) RJX (4) A A A(pk) ns C/W C/W C/W 1N5802, US, URS 1N5804, U

6、S, URS 1N5806, US, URS 50 100 150 2.5 2.5 2.5 1.0 1.0 1.0 35 35 35 25 25 25 36 36 36 13 13 13 154 154 154 1N5807, US, URS 1N5809, US, URS 1N5811, US, URS 50 100 150 6.0 6.0 6.0 3.0 3.0 3.0 125 125 125 30 30 30 22 22 22 6.5 6.5 6.5 52 52 52 See notes on next page. AMSC N/A FSC 5961 * Comments, sugges

7、tions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online data

8、base at https:/assist.dla.mil. INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 2 1.3.2 Rating

9、s applicable to individual types - Continued. (1) TEC= TLat L = 0 or Tend tabfor US suffix devices. (2) Derate at 25 mA/C for TLabove +75C for 2.5 amp ratings. (3) Derate at 60 mA/C for TLabove +75C for 6.0 amp ratings. (4) For the 1 and 3 amp ratings at 55C, these IOratings are for a thermally (PC

10、boards or other) mounting methods where the lead or end-cap temperatures cannot be maintained as shown in col. 3 of 1.3.2 and where the thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX)in 1.3.1 is not exceeded. This equates to RJX 154C/W for the 1N5802

11、- 1N5806 and RJX 52C/W for the 1N5807 - 1N5811 in col. 9 of 1.3.2. Also, see application notes in 6.5.1 thru 6.5.4 herein. (5) Derate at 8.33 mA/C for TAabove +55C for 1.0 amp ratings. (6) Derate at 25 mA/C for TAabove +55C for 3.0 amp ratings. (7) US suffix devices only. 1.4 Primary electrical char

12、acteristics. Unless otherwise specified, TA= +25C. Types VBR at 100 A, pulse 20 ms IR1at VR= VRWMTA= +25C, pulsed VR 20 ms IR2at VR= VRWMTA= +125C, pulsed VR 20 ms 1N5802, US, URS 1N5804, US, URS 1N5806, US, URS V 60 110 160 A 1.0 1.0 1.0 A 175 175 175 1N5807, US, URS 1N5809, US, URS 1N5811, US, URS

13、 60 110 160 5.0 5.0 5.0 525 525 525 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 3 Dimensions 1N5802, 1N5804, 1N5806 1N5807, 1N5809, 1N5811 Ltr. Inches Millimeters Inches Millimeters Notes Min Max Min Max Min Max Min Max BD .065

14、 .085 1.65 2.16 .115 .142 2.92 3.61 4 BL .125 .250 3.18 6.35 .130 .300 3.30 7.62 3 LD .027 .032 0.69 0.81 .036 .042 0.91 1.07 3 LL .700 1.30 17.78 33.02 .900 1.30 22.86 33.02 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BL shall include the

15、entire body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance

16、 with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 4 Dimensions 1N5802US, 1N5804US, 1N5806US 1N5807US, 1N5809US, 1N5811US Ltr. Inches Millimete

17、rs Inches Millimeters Notes Min Max Min Max Min Max Min Max BD .091 .103 2.31 2.62 .137 .148 3.48 3.76 BL .168 .200 4.27 5.08 .200 .225 5.08 5.72 ECT .019 .028 0.48 0.71 .019 .028 0.48 0.71 S .003 0.08 .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information onl

18、y. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. Cathode marking to be either in color band, three dots spaced equally, or a color dot on the face of the end tab. 6. Color dots will be .020 inch (0.51 mm) diameter minimum and those o

19、n the face of the end tab shall not lie within .020 inch (0.51 mm) of the mounting surface. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2A. Physical dimensions of US surface mount family. US Provided by IHSNot for ResaleNo reproduction or networking permitted

20、 without license from IHS-,-,-MIL-PRF-19500/477K 5 Dimensions 1N5802URS, 1N5804URS, 1N5806URS 1N5807URS, 1N5809URS, 1N5811URS Ltr. Inches Millimeters Inches Millimeters Notes Min Max Min Max Min Max Min Max BD .091 .103 2.31 2.62 .137 .148 3.48 3.76 8 BL .168 .200 4.27 5.08 .200 .225 5.08 5.72 ECT .

21、019 .028 0.48 0.71 .019 .028 0.48 0.71 8 S .003 0.08 .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. Cathode marking to be either in c

22、olor band, three dots spaced equally, or a color dot on the face of the end tab. 6. Color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab shall not lie within .020 inch (0.51 mm) of the mounting surface. 7. In accordance with ASME Y14.5M, diameters are equivale

23、nt to x symbology. 8. One endcap shall be square and the other end-cap shall be round. * FIGURE 2B. Physical dimensions of URS surface mount family. URS Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 6 1N5802, 1N5804, 1N5806 Dimen

24、sions Ltr Inches Millimeters Min Max Min Max A .043 .047 1.10 1.20 B .032 .036 0.82 0.92 C .008 .012 0.20 0.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Anode is aluminum at 38,000 minimum. 4. Cathode is gold at 3,500 minimum. FIGURE 3. JANC (E- ve

25、rsion) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 7 1N5807, 1N5809, 1N5811 Dimensions Ltr Inches Millimeters Min Max Min Max A .068 .072 1.73 1.83 B .057 .061 1.45 1.55 C .008 .012 0.20 0.30 NOTES: 1. Dimension

26、s are in inches. 2. Millimeters are given for general information only. 3. Anode is aluminum at 38,000 minimum. 4. Cathode is gold at 3,500 minimum. FIGURE 4. JANC (E-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19

27、500/477K 8 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every

28、 effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and h

29、andbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor

30、Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Ave

31、nue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supe

32、rsedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are

33、manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL

34、-PRF-19500 and as follows: EC. . . . . . . . . . . . . . End-cap. I(BR). . . . . . . . . . . . .Current for testing breakdown voltage. Vfr. . . . . . . . . . . . . . Forward recovery voltage. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PR

35、F-19500, and figures 1 through 4 herein. * 3.4.1 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond shall be in accordance with th

36、e requirements of category I, appendix A, MIL-PRF-19500. No point contacts. Silver button dumet design is prohibited. 3.4.1.1 Surface mount. US and URS version devices shall be structurally identical to the non-surface mount devices except for lead terminations. The surface mount URS version shall b

37、e considered structurally identical to the US version except for end-cap shape. One end-cap shall be square and the other end-cap shall be round. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 9 3.4.2 Lead finish. Unless otherwise

38、 specified, lead or end-cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish, the maximum lead temperature is limited to 175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see

39、 6.2). 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.5.1 Marking of US and URS versions. For US versions only, all marking may be omitted from the device except for the cathode marking. For URS versions only, all marking may be omitted from the device. All marking which is om

40、itted from the body of the devices shall appear on the label of the initial container. 3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately, for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around

41、the periphery of the cathode end may be used. No color coding will be permitted. For URS surface mount parts only, cathode shall be connected to the round end-cap. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specifi

42、ed in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that

43、will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.

44、2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E inspection. Group E inspection shall be performed for qualification or requalification only. In case qualification was awarded to a prior revision of the specificatio

45、n sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accorda

46、nce with appendix G of MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/477K 10 4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MI

47、L-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) JANS level JANTXV and JANTX level (1) 3c Thermal impedance

48、(see 4.3.1) Thermal impedance (see 4.3.1) 9 IR1,VFM1or VFM4. Not required 10 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, condition A 11 Required IR1, VFM1,or VFM4; IR1 100 percent of initial reading or 150 nA dc (1N5802, 1N5804, 1N5806) or 500 nA dc (1N5807, 1N5809, 1N5811), whichever is greater. VFM 0.05 V dc. Required IR1, VFM1,or VFM412 Required, see 4.3.2 Required, see 4.3.2 (2) 13 Subgroups 2 and 3 of table I herein; IR1 100 percent of initial reading or 150 nA dc (1N5802, 1N5804, 1N5806) or 500 nA dc (1N5807, 1N5809, 1N5811), which