BS IEC 60747-4-2008 Semiconductor devices - Discrete devices - Microwave diodes and transistors《半导体装置 分立装置 微波二极管和晶体管》.pdf

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1、BRITISH STANDARDBS IEC 60747-4:2007Semiconductor devices Discrete devices Part 4: Microwave diodes and transistors ICS 31.080.10; 31.080.30g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g

2、3g38g50g51g60g53g44g42g43g55g3g47g36g58BS IEC 60747-4:2007This British Standard was published under the authority of the Standards Policy and Strategy Committee on 29 February 2008 BSI 2008ISBN 978 0 580 54556 6National forewordThis British Standard is the UK implementation of IEC 60747-4:2007. It s

3、upersedes BS 6493-1.4:1992 which is withdrawn.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the nec

4、essary provisions of a contract. Users are responsible for its correct application.Compliance with a British Standard cannot confer immunity from legal obligations.Amendments/corrigenda issued since publicationDate CommentsIEC 60747-4Edition 2.0 2007-08INTERNATIONAL STANDARD Semiconductor devices Di

5、screte devices Part 4: Microwave diodes and transistors CONTENTS 1 Scope.6 2 Normative references .6 3 Variable capacitance, snap-off diodes and fast-switching schottky diodes 6 3.1 Variable capacitance diodes6 3.1.1 General .6 3.1.2 Terminology and letter symbols .7 3.1.3 Essential ratings and char

6、acteristics7 3.1.4 Measuring methods .10 3.2 Snap-off diodes, Schottky diodes 37 3.2.1 General .37 3.2.2 Terminology and letter symbols .37 3.2.3 Essential ratings and characteristics37 3.2.4 Measuring methods .39 4 Mixer diodes and detector diodes .46 4.1 Mixer diodes used in radar applications.46

7、4.1.1 General .46 4.1.2 Terminology and letter symbols .46 4.1.3 Essential ratings and characteristics46 4.1.4 Measuring methods .48 4.2 Mixer diodes used in communication applications67 4.2.1 General .67 4.2.2 Terminology and letter symbols .67 4.2.3 Essential ratings and characteristics67 4.2.4 Me

8、asuring methods .69 4.3 Detector diodes .69 5 Impatt diodes69 5.1 Impatt diodes amplifiers 69 5.1.1 General .69 5.1.2 Terms and definitions 69 5.1.3 Essential ratings and characteristics72 5.2 Impatt diodes oscillators75 6 Gunn diodes.75 6.1 General .75 6.2 Terms and definitions 76 6.3 Essential rat

9、ings and characteristics .76 6.4 Measuring methods .76 6.4.1 Pulse breakdown voltage.76 6.4.2 Threshold voltage77 6.4.3 Resistance 78 7 Bipolar transistors 79 7.1 General .79 7.2 Terms and definitions 79 7.3 Essential ratings and characteristics .82 BS IEC 60747-4:2007 2 7.3.1 General .82 7.3.2 Limi

10、ting values (absolute maximum rating system) 82 7.4 Measuring methods .85 7.4.1 General .85 7.4.2 DC characteristics .87 7.4.3 RF characteristics87 7.5 Verifying methods .101 7.5.1 Load mismatch tolerance (L) .101 7.5.2 Source mismatch tolerance (S)105 7.5.3 Load mismatch ruggedness (R) .109 8 Field

11、-effect transistors110 8.1 General .110 8.2 Terms and definitions 110 8.3 Essential ratings and characteristics .113 8.3.1 General .113 8.3.2 Limiting values (absolute maximum rating system) 114 8.4 Measuring methods .115 8.4.1 General .115 8.4.2 DC characteristics .116 8.4.3 RF characteristics122 8

12、.5 Verifying methods .133 8.5.1 Load mismatch tolerance (L).133 8.5.2 Source mismatch tolerance (S) .133 8.5.3 Load mismatch ruggedness (R).133 9 Assessment and reliability specific requirements .133 9.1 Electrical test conditions133 9.2 Failure criteria and failure-defining characteristics for acce

13、ptance tests 133 9.3 Failure criteria and failure-defining characteristics for reliability tests 133 9.4 Procedure in case of a testing error.133 Figure 1 Equivalent circuit10 Figure 2 Circuit for the measurement of reverse current IR.10 Figure 3 Circuit for the measurement of forward voltage VF.11

14、Figure 4 Circuit for the measurement of capacitance Ctot.12 Figure 5 Circuit for the measurement of effective quality factor 13 Figure 6 Circuit for the measurement of series inductance .15 Figure 7 Circuit for the measurement of thermal resistance Rth16 Figure 8 Circuit for the measurement of trans

15、ient thermal impedance Zth.17 Figure 9 Waveguide mounting19 Figure 10 Equivalent circuit of mounted diode19 Figure 11 Block diagram of transmission loss measurement circuit 20 Figure 12 Curve indicating transmitted power versus frequency.22 Figure 13 Example of cavity.24 Figure 14 Block diagram for

16、the measurement of effective Q in cavity method .26 BS IEC 60747-4:2007 3 Figure 15 Block diagram of transformed impedance measurement circuit.33 Figure 16 Example of plot of diode impedance as a function of bias.34 Figure 17 Modified Smith Chart indicating constant Q and constant R circles.36 Figur

17、e 18 Transition time tt37 Figure 19 Circuit for the measurement of transition time (tt).39 Figure 20 The time interval (tt1) .41 Figure 21 Circuit for the measurement of reverse recovery time.41 Figure 22 The reverse recovery time trr42 Figure 23 Circuit for the measurement of the excess carrier eff

18、ective lifetime 43 Figure 24 Circuit for the measurement of the excess carrier effective lifetime 44 Figure 25 the ratio of iprto ipf.45 Figure 26 Circuit for the measurement of forward current (IF).48 Figure 27 Circuit for the measurement of rectified current (I0)49 Figure 28 Circuit for the measur

19、ement of intermediate frequency impedance (Zif) in the method 1.50 Figure 29 Circuit for the measurement of intermediate frequency impedance (Zif) in the method 2.51 Figure 30 Circuit for the measurement of voltage standing wave ratio53 Figure 31 Circuit for the measurement of overall noise factor.5

20、5 Figure 32 Circuit for the measurement of output noise ratio .59 Figure 33 Circuit for the measurement of conversion loss in dc incremental method 61 Figure 34 Circuit for the measurement of conversion loss in amplitude modulation method .62 Figure 35 Block diagram of burnout energy measurement cir

21、cuit63 Figure 36 Circuit for the measurement of pulse breakdown voltage76 Figure 37 Circuit for the measurement of threshold voltage77 Figure 38 Circuit for the measurement of resistance in voltmeter-ammeter method78 Figure 39 Circuit for the measurement of resistance in alternative method.79 Figure

22、 40 Circuit for the measurement of scattering parameters 89 Figure 41 Incident and reflected waves in a two-port network 90 Figure 42 Circuit for the measurements of two-tone intermodulation distortion .96 Figure 43 Example of third order intermodulation products indicated by the spectrum analyser98

23、 Figure 44 Typical intermodulation products output power characteristic .100 Figure 45 Circuit for the verification of load mismatch tolerance in the method 1102 Figure 46 Circuit for the verification of load mismatch tolerance in the method 2104 Figure 47 Circuit for the verification of source mism

24、atch tolerance in the method 1.106 BS IEC 60747-4:2007 4 Figure 48 Circuit for the verification of source mismatch tolerance in the method 2.108 Figure 49 Circuit for the verification of load mismatch ruggedness.109 Figure 50 Circuit for the measurements of gate-source breakdown voltage, V(BR)GSO117

25、 Figure 51 Circuit for the measurements of gate-drain breakdown voltage, V(BR)GDO117 Figure 52 Circuit for the measurement of thermal resistance, channel-to-case.118 Figure 53 Timing chart of DC pulse to be supplied to the device being measured 120 Figure 54 Calibration curve VGSF= f(Tch) for fixed

26、IG(ref), evaluation of 121 Figure 55 VGSF2in function of delay time 4.122 Figure 56 Circuit for the measurement of output power at specified input power 123 Figure 57 Circuit for the measurements of the noise figure and associated gain.128 Table 1 Electrical limiting values82 Table 2 DC characterist

27、ics .83 Table 3 RF characteristics .84 Table 4 Replacing rule for terms 85 Table 5 Replacing rule for symbols in the case of constant base current86 Table 6 Replacing rule for symbols in the case of constant base voltage .86 Table 7 Electrical limiting values114 Table 8 DC characteristics .114 Table

28、 9 RF characteristics .115 Table 10 Replacing rules for terms.116 Table 11 Replacing rules for symbols.116 Table 12 Operating conditions and Test circuits.134 Table 13 Failure criteria and measurement conditions .136 BS IEC 60747-4:2007 5 SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 4: Microwave diod

29、es and transistors 1 Scope This part of IEC 60747 gives requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); mixer diodes and

30、detector diodes; avalanche diodes (for direct harmonic generation, amplification); gunn diodes (for direct harmonic generation); bipolar transistors (for amplification, oscillation); field-effect transistors (for amplification, oscillation). 2 Normative references The following referenced documents

31、are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60050-702:1992, International Electrotechnical Vocabulary Chapter 702: Oscillati

32、ons, signals and related devices IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-7:2000, Semiconductor devices Part 7: Bipolar transistors IEC 60747-8:2000, Semiconductor devices Part 8: Field-effect transistors IEC 60747-16-1:2001, Semiconductor devices Part 16-1: Microwave integr

33、ated circuits Amplifiers Amendment 1(2007) 3 Variable capacitance, snap-off diodes and fast-switching schottky diodes 3.1 Variable capacitance diodes 3.1.1 General The provisions of this part deal with diodes (excluding snap-off diodes) in which the variable capacitance effect is used; they cover fo

34、ur applications: tuning, harmonic multiplication, switching (including limiting), parametric amplification. BS IEC 60747-4:2007 6 The devices for these applications are defined as follows: Diodes for tuning Diodes which are used to vary the frequency of a tuned circuit. These diodes are usually char

35、acterized a frequency of resonance much higher than the frequency of use and have a known capacitance/voltage relationship. Diodes for harmonic multiplication These diodes must have a non-linear capacitance/voltage relationship at the frequency of operation and a high ratio of cut-off frequency to o

36、perating frequency. Diodes for switching (including limiting) These diodes exhibit a fast transition from a high impedance state to a low impedance state and vice versa and can be used to modulate or control the power level in microwave systems. Diodes for parametric amplification These diodes are i

37、ntended to handle small amplitude signals and are most often used in low-noise amplifiers. 3.1.2 Terminology and letter symbols See 3.1.3.3. 3.1.3 Essential ratings and characteristics 3.1.3.1 General 3.1.3.1.1 Rating conditions Variable capacitance diodes may be specified either as ambient rated or

38、 case rated devices or, where appropriate, as both. The ratings listed in 3.1.3.2 should be stated at the following temperatures: ambient-rated devices: at an ambient temperature of 25 C and at one higher temperature. case-rated devices: at a reference point temperature of 25 C and at another refere

39、nce point temperature. 3.1.3.1.2 Application categories The essential ratings and characteristics to be stated for each category of diode are marked with a + sign in the following table: BS IEC 60747-4:2007 7 column 1: tuning applications; column 2: harmonic multiplication applications; column 3: sw

40、itching (including limiting) applications; column 4: parametric amplification applications. 3.1.3.2 Ratings (limiting values) Categories The following ratings should be stated: 1 2 3 4 3.1.3.2.1 Temperatures Range of operating temperatures Range of storage temperatures + + + + + + 3.1.3.2.2 Voltages

41、 and currents Maximum peak reverse voltage Maximum mean forward current, where appropriate Maximum peak forward current, where appropriate + + + + + + 3.1.3.2.3 Power dissipation Maximum dissipation, under stated conditions, over the operating temperature range + + + + 3.1.3.3 Electrical characteris

42、tics Unless otherwise specified, the following characteristics should be given at 25 C (see Figure 1) 3.1.3.3.1 Stray capacitance (Cp) Typical value under specified conditions + + + + 3.1.3.3.2 Series inductance (Ls) Typical value and, where appropriate, maximum value under specified conditions + +

43、+ + 3.1.3.3.3 Terminal capacitance (Ctot) a) Minimum and maximum values, at a specified bias voltage and at a specified frequency (note 2) b) Typical curve showing the relationship between terminal capacitance and bias voltage + + + + + + 3.1.3.3.4 Junction capacitance (Cj) Minimum and maximum value

44、s at a specified bias voltage (notes 2 and 3). When the order of magnitude of Cpis the same as that of the terminal capacitance Ctot, a typical value should be given for Cjinstead of minimum and maximum values + + +3.1.3.3.5 Effective quality factor (Q) Minimum values at two or more specified freque

45、ncies under specified bias conditions (note 4) + BS IEC 60747-4:2007 8 Categories 1 2 3 4 3.1.3.3.6 Cut-off frequency Minimum value under specified conditions (notes 4 and 5) + + + 3.1.3.3.7 Series resistance (rs) Maximum and/or typical values under specified conditions (note 4) + + + + 3.1.3.3.8 Re

46、verse current Maximum value at a specified reverse voltage + + + + 3.1.3.3.9 Thermal resistance Maximum value between junction and ambient, or between the junction and a specified reference point + + + 3.1.3.3.10 Switching time Typical value under specified conditions + 3.1.3.3.11 Stored charge or m

47、inority carrier life time Typical value, for either stored charge under specified conditions including bias, or minority carrier life time under specified conditions + + 3.1.3.3.12 Transition time Typical value, under specified conditions, together with a specified measurement circuit (note 1) + NOT

48、E 1 See definition in 3.2.2. NOTE 2 For categories 1, 2 and 3, the specified bias voltage should be 6 V and for category 4, the specified bias voltage should be 0 V. NOTE 3 The relationship between the junction capacitance and bias voltage should be represented either by a typical curve or by a math

49、ematical form. The mathematical form should be as follows: Cj= K (V + ) where V is the magnitude of the applied reverse voltage and K, and are three constants. The manufacturer should specify the typical values for K, and . NOTE 4 If the Q value and the series resistance are not specified for category 1, then the cut-off frequency must be specified. NOTE 5 The c