BS DD IEC TS 62433-1-2011 EMC IC modelling General modelling framework《EMC IC模型设计 通用模型设计框架》.pdf

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1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationEMC IC modellingPart 1: General modelling frameworkDD IEC/TS 62433-1:2011National forewordThis Draft for Development is the UK implementation of IEC/TS 62433-1:2011.The UK partic

2、ipation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for

3、its correct application. BSI 2011ISBN 978 0 580 58907 2 ICS 31.200Compliance with a British Standard cannot confer immunity from legal obligations.This Draft for Development was published under the authority of the Standards Policy and Strategy Committee on 30 June 2011.Amendments issued since publi

4、cationAmd. No. Date Text affectedDRAFT FOR DEVELOPMENTDD IEC/TS 62433-1:2011IEC/TS 62433-1 Edition 1.0 2011-04 TECHNICAL SPECIFICATION SPCIFICATION TECHNIQUE EMC IC modelling Part 1: General modelling framework Modles de circuits intgrs pour la CEM Partie 1: Cadre de modle gnral INTERNATIONAL ELECTR

5、OTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE L ICS 31.200 PRICE CODE CODE PRIX ISBN 978-2-88912-473-2 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale DD IEC/TS 62433-1:2011 2 TS 62433-1 IEC:2011 C

6、ONTENTS 1 Scope . 6 2 Normative references . 6 3 Terms and definitions . 6 4 Definition of models 7 4.1 General . 7 4.2 Conducted emission model 7 4.3 Radiated emission model 7 4.4 Conducted immunity model . 7 4.5 Radiated immunity model 8 5 Modelling approaches. 8 5.1 General . 8 5.2 Black box mode

7、lling approach . 8 5.3 Equivalent circuit modelling approach . 9 5.4 Other modelling approaches 9 5.4.1 Electromagnetic modelling approach . 9 5.4.2 Statistical modelling approach . 9 6 Requirements of model description . 9 Annex A (normative) Requirements for EMC IC models . 11 Table A.1 Requiremen

8、ts for model description . 11 DD IEC/TS 62433-1:2011TS 62433-1 IEC:2011 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ EMC IC MODELLING Part 1: General modelling framework FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all na

9、tional electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Techni

10、cal Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work.

11、 International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) T

12、he formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendat

13、ions for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end

14、user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publicati

15、on shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent

16、 certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any person

17、al injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative refer

18、ences cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for

19、identifying any or all such patent rights. The main task of IEC technical committees is to prepare International Standards. In exceptional circumstances, a technical committee may propose the publication of a technical specification when the required support cannot be obtained for the publication of

20、 an International Standard, despite repeated efforts, or the subject is stil under technical development or where, for any other reason, there is the future but no immediate possibility of an agreement on an International Standard. Technical specifications are subject to review within three years of

21、 publication to decide whether they can be transformed into International Standards. IEC 62433-1, which is a technical specification, has been prepared by subcommittee 47A: Integrated circuits, of IEC technical committee 47: Semiconductor devices. DD IEC/TS 62433-1:2011 4 TS 62433-1 IEC:2011 The tex

22、t of this specification is based on the following documents: Enquiry draft Report on voting 47A/840/DTS 47A/850A/RVC Full information on the voting for the approval of this technical specification can be found in the report on voting indicated in the above table. This publication has been drafted in

23、 accordance with the ISO/IEC Directives, Part 2. A list of all parts of the IEC 62433 series, under the general title EMC IC modelling, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC

24、 web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be transformed into an International standard, reconfirmed, withdrawn, replaced by a revised edition, or amended. DD IEC/TS 62433-1:2011TS 62433-1 IEC:2011 5 INTRODUCTION The I

25、nternational Standards of IEC 62433 series provide specifications for EMC IC modelling. EMC IC model is the model of integrated circuits for electro-magnetic compatibility. IC models that are built in conformity with these International Standards can be applied to simulations for EMC and/or evaluati

26、ons of EMI (electro-magnetic interference) as well as EMS (electro-magnetic susceptibility) of electronic systems. DD IEC/TS 62433-1:2011 6 TS 62433-1 IEC:2011 EMC IC MODELLING Part 1: General modelling framework 1 Scope This part of the IEC 62433 series provides specifications for model-categories

27、of EMC IC modelling, definitions of terms that are commonly used in IEC 62433 series, modelling approaches that can be used, and requirements for each modelling that is standardized in this series. 2 Normative references The following referenced documents are indispensable for the application of thi

28、s document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60050-131, International Electrotechnical Vocabulary (IEV) Chapter 131: Circuit theory IEC 60050-161, International Electrot

29、echnical Vocabulary (IEV) Chapter 161: Electromagnetic compatibility 3 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 60050-131, IEC 60050-161 and the following apply. 3.1 reference node node of a network where the voltages of other nodes, which belon

30、g to the network, are determined by reference to the node NOTE In many cases the voltage of the reference node is set as zero for descriptive purposes. 3.2 reference terminal terminal of a circuit block where the voltages of other terminals, which belong to the block, are determined by reference to

31、the terminal 3.3 internal activity IA component of an IC model represented by a current or voltage source, which originates in activity of active devices in an IC or in a portion of the IC NOTE IA is applicable for both analogue and digital circuitry. 3.4 passive distribution network PDN component o

32、f an IC model that represents the characteristics of propagation path of electromagnetic noises such as power distribution network DD IEC/TS 62433-1:2011TS 62433-1 IEC:2011 7 3.5 inter-block coupling IBC network of passive elements that presents a coupling effect between circuit blocks 4 Definition

33、of models 4.1 General Four EMC IC models presented in IEC 62433 series are defined in 4.2 through 4.5. These models can be used for device-to-device comparison, risk assessment for the disturbance among devices involved in multi-chip technology (such as MCM, SiP), and evaluation of the coupling betw

34、een a device and PCB tracks. 4.2 Conducted emission model A conducted emission (CE) model is a macro-model which describes an Integrated Circuit (IC) or multiple dies in a package or module (System in Package, SiP) as a source of conducted RF disturbances. The CE model shall be described as a multi-

35、terminal or a multi-port circuit which can be linear or nonlinear. Each CE model consists of internal activities (IAs) as noise sources and passive distribution networks (PDNs) which express characteristics of internal circuits in a form of a black box and/or an equivalent circuit. The model can inc

36、lude sub-models of inter-block coupling (IBC) if needed. The model describes RF disturbances at external terminals of an IC as voltage and/or current which are generated by its internal operations. 4.3 Radiated emission model A radiated emission (RE) model is a macro-model which describes radiated R

37、F disturbances generated by an integrated circuit (IC) or multiple dies in a package or module (System in Package, SiP). The RE model shall be described as equivalent sources of electric or magnetic fields, which cause near-field coupling or far-field radiation, or an equivalent circuit which expres

38、s electric or magnetic coupling between the IC or dies and external circuits or enclosures. 4.4 Conducted immunity model A conducted immunity (CI) model is a macro-model which describes an Integrated Circuit (IC) or multiple dies in a package or module (System in Package, SiP) as a victim of conduct

39、ed RF disturbances applied from outside. The CI model shall be described as a multi-terminal or a multi-port circuit in a form of a black box and/or an equivalent circuit which may be linear or nonlinear. The CI model provides measures or criteria of malfunctions caused by RF disturbances injected a

40、t external terminals as voltage, current, or RF power. DD IEC/TS 62433-1:2011 8 TS 62433-1 IEC:2011 4.5 Radiated immunity model A radiated immunity (RI) model is a macro-model which describes an Integrated Circuit (IC) or multiple dies in a package or module (System in Package, SiP) as a victim of r

41、adiated RF disturbances from outside. The RI model is described as equivalent circuits which can express electric or magnetic coupling between the IC or dies and external circuits or enclosures. The RI model provides measures or criteria of malfunctions caused by RF disturbances applied as electric

42、or magnetic fields in near-field or electromagnetic field. 5 Modelling approaches 5.1 General Description of an EMC IC model, such as equivalent circuit parameters, can be derived from design data of the device, or extracted from data obtained by measurement. Each of the models shall contain informa

43、tion of an internal integrated circuit (IC) or multiple dies as well as that of a package. The conducted emission (CE) or conducted immunity (CI) model can be expressed in either a form of a black box model, or an equivalent circuit model. The model shall be expressed with a circuit concept includin

44、g terminals and/or nodes. The radiated emission (RE) or radiated immunity (RI) model can be expressed with either an electromagnetic model or an equivalent circuit model. The electromagnetic RE model expresses near field or far field which causes electromagnetic interference (EMI). The electromagnet

45、ic RI model expresses electromagnetic coupling induced in the device. The equivalent circuit model for RE/RI describes electric or magnetic coupling with capacitive or inductive circuit elements. The equivalent circuit model for RE/RI may include a black-box model as a sub-model. The following sub-c

46、lauses describe modelling approach for possible expressions of each model. Some of the expressions can be combined and used in one model. 5.2 Black box modelling approach The expression of a black box model is essentially an N-port circuit, whose characteristics are expressed in a matrix form or wit

47、h some circuit equations. When a black box model is used to express a CE or RE model, some voltage and/or current sources are connected to the black box as noise sources to express internal activities (IAs). The following matrix expressions are available for black-box models. For a linear circuit, o

48、r a circuit which can be approximated as linear, the following matrices can be used; these matrices are the functions of frequency and time-variant, disregardingnon-linear elements. impedance (Z) matrix admittance (Y) matrix fundamental (F) matrix scattering (S) matrix Elements of these matrices can

49、 be expressed with formulas with some parameters, or tables which provide frequency characteristics of the circuit. DD IEC/TS 62433-1:2011TS 62433-1 IEC:2011 9 In the definition of a model, internal terminals/ports and external terminals/ports shall be clearly defined and noted as prerequisite information for the matrices. Characteristics of a distributed constant circuit, such as transmission lines, can be expressed with a scattering (S) matrix as a multi-port ci